MMBT3904AT

MMBT3904AT NPN Transistor Features ■ ■ Complementary to MMBT3906AT Small Package Absolute Maximum Ratings Parameter Symbol Value Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current - Continuous IC 200 mA Collector Power Dissipation PC 150 mW RθJA 833 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55 to +150 ℃ Thermal Resistance from Junction to Ambient Electrical Characteristics Parameter SOT-523 (TA = 25 °C unless otherwise noted) 1. BASE 2. EMITTER 3. COLLECTOR (TA = 25 °C unless otherwise noted) Test Conditions Symbol Min Max Unit Collector-Base Breakdown Voltage V(BR)CBO IC=10µA, IE=0 60 - V Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 40 - V Emitter-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=0 6 - V nA nA Collector Cut-Off Current ICEX VCE=30V, VEB(off)=3V - Emitter Cut-Off Current IEBO VEB=5V, IC=0 - 50 100 hFE(1) VCE=1V, IC=0.1mA 40 - - hFE(2) VCE=1V, IC=1mA 70 - - hFE(3) VCE=1V, IC=10mA 100 300 - hFE(4) VCE=1V, IC=50mA 60 - - IC=10mA, IB=1mA - 0.2 V IC=50mA, IB=5mA - 0.3 V IC=10mA, IB=1mA 0.65 0.85 V IC=50mA, IB=5mA - 0.95 V DC Current Gain Collector-Emitter Saturation Voltage VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Transition Frequency fT VCE=20V,IC=10mA, f=100MHz 300 MHz Collector Output Capacitance Cob VCB=5V, IE=0, f=1MHz - 4 pF Base Input Capacitance Cib VEB=0.5V, IC=0, f=1MHz - 8 pF Delay Time td VCC=3V, VBE(off)=-0.5V IC=10mA, - 35 ns Rise Time tr - 35 ns Storage Time ts VCC=3V, IC=10mA, IB1= IB2=1mA - 200 ns Fall Time tf VCC=3V, IC=10mA, IB1= IB2=1mA - 50 ns IB1=1mA VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA 1/3 MMBT3904AT NPN Transistor Typical Characteristic Curves Static Characteristic 14 hFE 56uA 10 49uA 42uA 8 o Ta=100 C 250 DC CURRENT GAIN (mA) 63uA IC COLLECTOR CURRENT VCE= 1V COMMON EMITTER Ta=25℃ 70uA 12 hFE —— IC 300 35uA 6 28uA 21uA 4 14uA 200 150 o Ta=25 C 100 50 2 IB=7uA 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 COLLECTOR-EMITTER VOLTAGE VCE 3.5 0 0.1 4.0 VBEsat —— IC 1.0 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (V) Ta=25℃ 0.6 Ta=100℃ 0.4 10 VCEsat —— 400 β=10 0.8 1 COLLECTOR CURRENT (V) IC 100 (mA) 200 IC β=10 300 200 Ta=100℃ 100 Ta=25℃ 0.2 0.1 0 1 10 COLLECTOR CURRENT 100 IC 1 200 IC—— VBE COLLECTOR POWER DISSIPATION Pc (mW) IC (mA) Pc 200 100 o Ta=100 C COLLECTOR CURRENT 100 COLLECTOR CURRENT 200 10 Ta=25℃ 1 —— IC 200 (mA) Ta 175 150 125 100 75 50 25 VCE=1V 0.1 0.3 10 (mA) 0 0.4 0.5 0.6 0.7 BASE-EMITTER VOLTAGE 0.8 0.9 1.0 0 25 50 75 AMBIENT TEMPERATURE VBE(V) 2/3 100 Ta 125 (℃ ) 150 MMBT3904AT NPN Transistor Package Outline Dimensions Symbol A A1 A2 b1 b2 c D E E1 e e1 L L1 θ Dimensions In Millimeters Min. Max. 0.700 0.900 0.000 0.100 0.700 0.800 0.150 0.250 0.250 0.350 0.100 0.200 1.500 1.700 0.700 0.900 1.450 1.750 0.500 TYP. 0.900 1.100 0.400 REF. 0.260 0.460 0° 8° SOT-523 Dimensions In Inches Min. Max. 0.028 0.035 0.000 0.004 0.028 0.031 0.006 0.010 0.010 0.014 0.004 0.008 0.059 0.067 0.028 0.035 0.057 0.069 0.020 TYP. 0.035 0.043 0.016 REF. 0.010 0.018 0° 8° Suggested Pad Layout Marking and Ordering Information Device Package MMBT3904AT SOT-523 www.goodarksemi.com Marking Quantity 3000pcs / Reel 1N 3/3 HSF Status RoHS Compliant Doc.USMMBT3904ATxSC2.0