PZT2222A

PZT2222A NPN Transistor Features ■ Epitaxial planar die construction ■ Complementary PNP type available (PZT2907A) Absolute Maximum Ratings (TA = 25 °C unless otherwise noted) SOT-223 Parameter Symbol Value Unit Collector-Base Voltage VCBO 75 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current - Continuous IC 600 mA Collector Power Dissipation PC 1 W Junction Temperature TJ -55 to +150 ℃ Storage Temperature TSTG -55 to +150 ℃ Electrical Characteristics Symbol Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Output Capacitance 2. COLLECTOR 3. EMITTER (TA = 25 °C unless otherwise noted) Parameter Collector Cut-Off Current 1. BASE Min Max IC= 10μ A,IE=0 75 - V V(BR)CEO IC= 10mA, IB=0 40 - V V(BR)EBO IE=10μA, IC=0 6 - V ICBO VCB=60V, IE=0 - 10 nA VCE=60V,VBE(off)=3V - 10 nA IEBO VEB= 3V , IC=0 - 10 nA hFE(1) VCE=10V, IC= 0.1mA 35 - - hFE(2) VCE=10V, IC= 1mA 50 - hFE(3) VCE=10V, IC= 10mA 75 - - hFE(4) VCE=10V, IC= 150mA 100 300 - hFE(5) VCE=1V, IC= 150mA 50 - - hFE(6) VCE=10V, IC= 500mA 40 - - VCE(sat) IC=500mA, IB= 50mA - 1 V VCE(sat) IC=150mA, IB= 15mA - 0.3 V VBE(sat) IC=500mA, IB= 50mA - 2.0 V VBE(sat) IC=150mA, IB=15mA - 1.2 V 300 - MHz - 8 pF - 10 nS - 25 nS - 225 nS - 60 nS ICEX fT Cob Delay Time td Rise Time tr Storage Time tS Fall Time tf Test Conditions VCE=20V,IC= 20mA, f=100MHz VCB=10V, IE= 0,f=1MHz VCC=30V, IC=150mA VBE(off)=0.5V,IB1=15mA VCC=30V, IC=150mA IB1=-IB2= 15mA 1/4 Unit PZT2222A NPN Transistor Typical Characteristic Curves Static Characteristic COMMON EMITTER Ta=25°C DC CURRENT GAIN 800uA 700uA 600uA 500uA 0.10 400uA Ta=100°C Ta=25°C 100 300uA 0.05 200uA IB= 100uA 0 2 4 6 VCEsat 1000 8 10 12 COLLECTOR-EMITTER VOLTAGE 100 —— VCE (V) 14 10 16 IC Ta=100 °C Ta=25°C 10 β=10 1 10 COLLECTOR CURREMT IC COMMON EMITTER VCE= 10V 1 100 (mA) 2/4 —— 100 IC 600 (mA) IC 900 Ta=25°C 600 300 600 10 COLLECTOR CURRENT VBEsat 1200 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR CURRENT IC 900uA 0.15 0.00 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) —— 1mA hFE 0.20 hFE 1000 IC (A) 0.25 Ta=100 °C β=10 1 10 COLLECTOR CURREMT IC 100 (mA) 600 PZT2222A NPN Transistor Typical Characteristic Curves IC —— fT VBE fT TRANSITION FREQUENCY Ta=2 5°C 100 °C 10 Ta= COLLECTOR CURRENT IC (MHz) 100 1 COMMON EMITTER VCE= 10V 100 COMMON EMITTER VCE=10V Ta=25°C 0.1 10 0 300 600 900 1200 1 10 100 —— Cob/Cib VCB/VEB PC 1200 f=1MHz IE=0/IC=0 —— IC (mA) Ta COLLECTOR POWER DISSIPATION PC (mW) 1100 Ta=25 °C (pF) 100 COLLECTOR CURRENT BESE-EMMITER VOLTAGE VBE (mV) Cib C CAPACITANCE —— 500 IC (mA) 600 10 Cob 1000 900 800 700 600 500 400 300 200 100 1 0.1 1 REVERSE VOLTAGE 10 V 0 20 0 (V) 25 50 75 100 AMBIENT TEMPERATURE 3/4 Ta 125 (°C) 150 PZT2222A NPN Transistor Package Outline Dimensions Symbol A A1 A2 b b1 c D E E1 e L θ Dimensions In Millimeters Min. Max. —— 1.800 0.020 0.100 1.500 1.700 0.660 0.840 2.900 3.100 0.230 0.350 6.300 6.700 6.700 7.300 3.300 3.700 2.300(BSC) 0.750 —— 0° 10° SOT-223 Dimensions In Inches Min. Max. —— 0.071 0.001 0.004 0.059 0.067 0.026 0.033 0.114 0.122 0.009 0.014 0.248 0.264 0.264 0.287 0.130 0.146 0.091(BSC) 0.030 —— 0° 10° Suggested Pad Layout Ordering Information Device Package Marking PZT2222A SOT-223 ZT2222A www.goodarksemi.com Quantity 2,500pcs / Reel 4/4 HSF Status RoHS Compliant Doc.USPZT2222AxSC3.0 Apr.2019