PZT2907A

PZT2907A PNP Transistor Features ■ ■ C Epitaxial planar die construction Complementary NPN Type available (PZT2222A) Absolute Maximum Ratings Parameter B Symbol Value Collector-Base Voltage -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -5 V Collector Current - Continuous IC -0.6 A Collector Power Dissipation PC 1 W RqJA 83.3 TJ,TSTG -55 to +150 Note 1: FR−4 with 1 oz and 713 mm2 E SOT-223 Unit VCBO Thermal Resistance Junction−to−Ambient 1 Junction and Storage Temperature C (TA = 25 °C unless otherwise noted) ℃/W ℃ of copper area. Electrical Characteristics Parameter (TA = 25 °C unless otherwise noted) Symbol Test Conditions Min Max Unit -60 - V = V(BR)CEO IC=-10mA,IB 0 -60 - V Emitter-Base Breakdown Voltage = V(BR)EBO IE=-10μA,IC 0 -5 - V Collector Cut-Off Current = ICBO VCB=-50V,IE 0 - -10 nA - -50 nA - Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage = V(BR)CBO IC=-10μA,IE 0 = IEBO VEB=-5V,IC 0 hFE(1) VCE=-10V,I =C -0.1mA 75 hFE(2) VCE=-10V,I =C -1mA 100 - hFE(3) VCE=-10V,I =C -10mA 100 - - hFE(4) VCE=-10V,I =C -150mA 100 300 - hFE(5) VCE=-10V,I =C -500mA 50 - - VCE(sat) = IC=-150mA,IB -15mA - -0.4 V VCE(sat) = IC=-500mA,IB -50mA - -1.6 V VBE(sat) = IC=-150mA,IB -15mA - -1.3 V VBE(sat) = IC=-500mA,IB -50mA - -2.6 V 200 - MHz Transition Frequency fT Collector Capacitance Cc = = VCB=-10V,IE 0,f 1MHz - 8 pF Emitter Capacitance C= VEB=-2V,IC 0,f 1MHz E = - 30 pF Delay Time td - 12 ns Rise Time tr - 30 ns Storage Time tS - 300 ns Fall Time tf - 65 ns Turn-on Time ton - 42 ns toff - 365 ns Turn-off Time VCE=-20V,I =C -50mA,f = 100MHz IC= -150mA IB1=- IB2=- 15mA 1/4 PZT2907A PNP Transistor Typical Characteristic Curves Static Characteristic hFE —— IC 1000 -1.8mA -1.6mA -1.4mA hFE -2mA COMMON EMITTER Ta=25℃ -1.2mA DC CURRENT GAIN (mA) -300 COLLECTOR CURRENT -350 IC -400 -250 -1mA -200 -0.8mA -150 -0.6mA o Ta=100 C o Ta=25 C 100 -100 -0.4mA -50 VCE= -10V IB=-0.2mA -0 -2 -4 -6 -8 -14 (V) VCE VBEsat —— IC -1000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) -12 -10 COLLECTOR-EMITTER VOLTAGE -800 Ta=25℃ -600 Ta=100℃ -400 -100 COLLECTOR CURRENT VCEsat —— -800 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -0 10 -10 IC -600 (mA) IC -600 -400 Ta=100℃ -200 Ta=25℃ β=10 β=10 -200 -1 -10 IC —— IC -1 (mA) -10 VBE 100 -600 -100 COLLECTOR CURRENT Cob / Cib —— IC (mA) VCB / VEB f=1MHz IE=0 / IC=0 -500 o (pF) Ta=25 C Cib C -400 CAPACITANCE COLLECTOR CURRENT IC (mA) -600 -600 -100 COLLECTOR CURRENT -0 o Ta=100 C -300 Ta=25℃ -200 10 Cob -100 VCE=-10V -0 -200 -400 -600 BASE-EMITTER VOLTAGE -800 1 -0.1 -1000 -1 REVERSE VOLTAGE VBE(mV) 2/4 -10 V (V) -20 PZT2907A PNP Transistor Typical Characteristic Curves fT 500 —— IC COLLECTOR POWER DISSIPATION Pc (W) o Ta=25 C 400 fT (MHz) VCE=-10V TRANSITION FREQUENCY Pc 1.2 300 200 100 —— Ta 1.0 0.8 0.6 0.4 0.2 0 0.0 -0 -20 -40 -60 COLLECTOR CURRENT -80 IC A A1 A2 b b1 c D E E1 e L θ Dimensions In Millimeters Min. Max. —— 1.800 0.020 0.100 1.500 1.700 0.660 0.840 2.900 3.100 0.230 0.350 6.300 6.700 6.700 7.300 3.300 3.700 2.300(BSC) 0.750 —— 0° 10° 0 25 50 75 AMBIENT TEMPERATURE (mA) Package Outline Dimensions Symbol -100 SOT-223 Dimensions In Inches Min. Max. —— 0.071 0.001 0.004 0.059 0.067 0.026 0.033 0.114 0.122 0.009 0.014 0.248 0.264 0.264 0.287 0.130 0.146 0.091(BSC) 0.030 —— 0° 10° 3/4 100 Ta 125 (℃ ) 150 PZT2907A PNP Transistor Suggested Pad Layout Marking and Ordering Information Device Package Marking PZT2907A SOT-223 ZT2907A www.goodarksemi.com Quantity 2500pcs / Reel 4/4 HSF Status RoHS Compliant Doc.USPZT2907AxSC3.0 Apr.2022