S3134K

S3134K 20V N-Channel MOSFET Main Product Characteristics V(BR)DSS D 20V D G 380mΩ@4.5V  G RDS(on)MAX 450mΩ@2.5V S Schematic Diagram SOT-723 800mΩ@1.8V ID S 0.75A  Features and Benefits „ Advanced MOSFET process technology Ideal for battery operated systems, load switching, power converters and other general purpose applications „ Low on-resistance with low gate charge „ Fast switching and reverse body recovery „ Description The S3134K utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications. Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage VDS 20 V Typical Gate-Source Voltage VGS ±12 V ID 0.75 A IDM 1.8 . A PD 150 mW RθJA 833 °C /W Junction Temperature TJ 150 °C Storage Temperature TSTG -55 to +150 °C TL 260 °C Continuous Drain Current1 Pulsed Drain Current (tp=10μs) Power Dissipation1 Thermal Resistance from Junction to Ambient1 Lead Temperature for Soldering Purposes(1/8” from case for 10 s) 1/4 S3134K 20V N-Channel MOSFET Electrical Characteristics (TA=25°C Parameter unless otherwise specified) Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID =250µA 20 --- --- V Zero Gate Voltage Drain Current IDSS VDS =20V,VGS = 0V --- --- 1 µA Gate-Body Leakage Current IGSS VGS =±10V, VDS = 0V --- ±4 ±8 µA VGS(th) VDS =VGS, ID =250µA 0.35 0.54 1.1 V VGS =4.5V, ID = 0.65A --- 270 380 mΩ VGS =2.5V, ID = 0.55A --- 320 450 mΩ VGS =1.8V, ID = 0.45A --- 390 800 mΩ gFS VDS =10V, ID =0.8A --- 1.6 --- S VSD IS=0.15A, VGS = 0V --- --- 1.2 V --- 79 120 pF --- 13 20 pF Gate Threshold Voltage2 Drain-Source On-Resistance2 Forward Transconductance2 Diode Forward Voltage RDS (on) Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss --- 9 15 pF td(on) --- 6.7 --- ns VGS=4.5V,VDS=10V, --- 4.8 --- ns ID =500mA,RGEN=10Ω --- 17.3 --- ns --- 7.4 --- ns VDS =16V,VGS =0V,f =1MHz Switching Characteristics Turn-On Delay Time3 Turn-On Rise Time3 Turn-Off Delay Time3 Turn-Off Fall Time3 tr td(off) tf Notes : 1. Surface mounted on FR4 board using the minimum recommended pad size. 2. Pulse Test : Pulse Width=300µs, Duty Cycle=2%. 3. Switching characteristics are independent of operating junction temperatures. B Dec,2013 2/4 S3134K 20V N-Channel MOSFET Typical Electrical and Thermal Characteristic Curves Transfer Characteristics Output Characteristics 5.0 4.5 4.0 VGS=4V,5V Ta=25℃ VDS=3V VGS=3V 3.5 VGS=2.5V 3.0 Pulsed Pulsed (A) ID 3.5 3.0 DRAIN CURRENT DRAIN CURRENT ID (A) 4.0 VGS=2V 2.5 2.0 1.5 Ta=25℃ 2.5 Ta=100℃ 2.0 1.5 1.0 VGS=1.5V 1.0 0.5 0.5 0.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 DRAIN TO SOURCE VOLTAGE 4.0 VDS 4.5 5.0 0 (V) 1 2 GATE TO SOURCE VOLTAGE 3 VGS 4 (V) RDS(ON) —— VGS RDS(ON) —— ID 500 800 Ta=25℃ Pulsed Pulsed 700 (m) 500 400 350 VGS=2.5V 300 VGS=4.5V 250 200 0.1 ID=0.65A 600 ON-RESISTANCE ON-RESISTANCE RDS(ON) (m) VGS=1.8V RDS(ON) 450 Ta=100℃ 400 300 Ta=25℃ 200 100 0.2 0.3 0.4 0.5 0.6 0.7 DRAIN CURRENT 0.8 ID 0.9 1.0 1.1 1.2 1 (A) 2 3 GATE TO SOURCE VOLTAGE 4 VGS 5 (V) Threshold Voltage IS —— VSD 2 0.8 Pulsed 1 VTH Ta=100℃ 0.1 THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 0.7 Ta=25℃ 0.6 ID=250uA 0.5 0.4 0.3 0.01 0.0 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE 1.2 1.4 0.2 25 1.6 VSD (V) 50 75 JUNCTION TEMPERATURE 3/4 100 Tj (℃ ) 125 S3134K 20V N-Channel MOSFET Package Outline Dimensions Symbol A A1 b b1 c D E E1 e θ Dimensions In Millimeters Min. Max. 0.500 0.320 0.000 0.050 0.170 0.270 0.270 0.370 0.080 0.150 1.150 1.250 1.150 1.250 0.750 0.850 0.800TYP. 7° REF. SOT-723 Dimensions In Inches Min. Max. 0.020 0.012 0.000 0.002 0.007 0.011 0.011 0.015 0.003 0.006 0.045 0.049 0.045 0.049 0.030 0.033 0.031TYP. 7° REF. Suggested Pad Layout www.goodarksemi.com 4/4 Doc.USS3134KxSC5.0 Sept.2021