SD101C

SD101A thru SD101C Small-Signal Diode Schottky Diodes Features For general purpose applications The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. These diodes are also available in the MiniMELF case with type designations LL101A thru LL101C. Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Maximum Ratings and Thermal Characteristics (Ratings at 25oC ambient temperature unless otherwise specified.) Parameter S D 101A S D 101B S D 101C Symbol Value 60 50 40 400 (1) Unit Peak inverse voltage Power dissipation (Infinite heatsink) VRRM Ptot IFSM RθJA Tj TS Volts mW Amps o Maximum single cycle surge 10 us square wave Thermal resistance junction to ambient air Junction temperature Storage temperature range 2.0 0.3 125 (1) C/mW o (1) C C -55 to +150 (1) o Notes: 1. Valid provided that leads at a distance of 4mm from case are kept at ambient temperature. 688 Electrical Characteristics (TJ=25oC unless otherwise noted.) Parameter S D 101A S D 101B S D 101C S D 101A S D 101B S D 101C S D 101A S D 101B S D 101C S D 101A S D 101B S D 101C S D 101A S D 101B S D 101C Symbol Test Condition Min. 60 50 40 - Typ. - Max. 200 200 200 0.41 0.4 0.39 1.0 0.95 0.9 2.0 2.1 2.2 1 Unit Reverse breakdown voltage V(BR)R IR=10uA VR=50V VR=40V VR=30V IF=1mA Volts Leakage current IR nA Volt Forward voltage drop VF IF=15mA Volt Junction capacitance Reverse recovery time Ctot trr VR=0V, f=1MHz IF=IR=5mA, recover to 0.1IR pF ns 689 RATINGS AND CHARACTERISTIC CURVES (TA = 25oC unless otherwise noted) 690