SES3V3N1006-2U

SES Series Ultra Small ESD Protector SES3V3N1006-2U ROHS Description The SES3V3N1006-2U ESD protector is designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDA’s. They feature large crosssectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time,lower operating voltage, lower clamping voltage and no device degradationwhen compared to MLVs. The SES3V3N1006-2U protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. The SES3V3N1006-2U is available in a DFN-2 package with working voltages of 3.3 volt. It gives designer the flexibility to protect one bidirectional line in applications where arrays are not practical. Additionally, it may be “sprinkled” around the board in Fapplications where board space is at a premium. It may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (±15kV air, ±8kV contact discharge). Feature 100 Watts peak pulse power (tp = 8/20μs) Transient protection for data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) Small package for use in portable electronics Suitable replacement for MLVs in ESD protection applications Protect one I/O or power line Low clamping voltage Stand off voltages: 3.3V Low leakage current Solid-state silicon-avalanche technology Small Body Outline Dimensions: 1.0mm×0.6mm×0.5mm Equivalent to 0402 package Applications Cell Phone Handsets and Accessories Personal Digital Assistants (PDA’s) Notebooks, Desktops, and Servers Portable Instrumentation Cordless Phones Digital Cameras Peripherals MP3 Players Ultra Small ESD Protector 1 www.goodark.com SES Series Ultra Small ESD Protector SES3V3N1006-2U ROHS Electrical characteristics @25℃(unless otherwise specified) Parameter Working Voltage Breakdown voltage Reverse Leakage Current Clamping Voltage Junction Capacitance Symbol VRWM VBR IR VC Cj Conditions Min. Typ. Max. 3.3 Units V V It =1mA VRWM =3.3V T=25℃ IPP=9.8A tP = 8/20μS 5.0 2.5 10.4 12 μA V pF VR=0V f = 1MHz Absolute maximum rating @25℃ Rating IEC 61000-4-2 (ESD) Contact ESD Voltage Per Human Body Model Per Machine Model Peak Pulse Power ( tP = 8/20μS ) Maximum Peak Pulse Current ( tP = 8/20μS ) Lead Soldering Temperature Operating Temperature Storage Temperature Ppk Ipp TL TJ TSTG Symbol Value ±30 16 400 100 9.8 260 (10 sec) -55 to +125 -55 to +150 Units kV kV V W A ℃ ℃ ℃ Typical Characteristics Figure1.Peak pulse power vs pulse time Ultra Small ESD Protector 2 www.goodark.com SES Series Ultra Small ESD Protector SES3V3N1006-2U ROHS Figure2. Pulse wave form Figure3.Power derating curve Ultra Small ESD Protector 3 www.goodark.com SES Series Ultra Small ESD Protector SES3V3N1006-2U ROHS Product dimension and foot print Top View Side View Common Dimensions (mm) PKG. Ref. A A1 A3 D E B L Bottom View e 0.95 0.55 0.20 0.45 Min. 0.4 0.00 X1: Extreme thin Nom. 0.125 Ref. 1.00 0.60 0.25 0.50 0.65 BSC 1.05 0.65 0.30 0.55 Max 0.5 0.05 Foot Print Revision History Revision 1.0 Date 2008-7-3 Changes - Ultra Small ESD Protector 4 www.goodark.com