SSF2215

SSF2215 20V Dual P-Channel MOSFETs Main Product Characteristics D1 V(BR)DSS -20V RDS(ON) 85mΩ ID G2 G1 -3A S1 SOT-23-6L D2 S2 Schematic Diagram Features and Benefits „ Advanced MOSFET process technology „ Ideal for hand-held devices, battery protection and load switch „ Low on-resistance with low gate charge „ Fast switching and reverse body recovery Description The SSF2215 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications. Absolute Maximum Ratings (TC=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±10 V -3 A Drain Current – Continuous (TA=25°C) ID Drain Current – Continuous (TA=70°C) Drain Current – Pulsed IDM 1 Power Dissipation (TA=25°C) PD Power Dissipation – Derate above 25°C -2.4 A -12 A 1.25 W 0.01 W/°C TSTG -55 to +150 °C TJ -55 to +150 °C Symbol Typ. Max. Unit RθJA --- 100 °C/W Storage Temperature Range Operating Junction Temperature Range Thermal Characteristics Parameter Thermal Resistance Junction to Ambient 1/5 SSF2215 20V Dual P-Channel MOSFETs Electrical Characteristics (TJ=25°C Parameter Symbol unless otherwise specified) Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -20 --- --- V Reference to 25°C , ID=-1mA --- 0.01 --- V/℃ VDS=-20V , VGS=0V , TJ=25°C --- --- -1 VDS=-16V , VGS=0V , TJ=125°C --- --- -10 VGS=±10V , VDS=0V --- --- ±100 VGS=-4.5V , ID=-3A --- 70 85 VGS=-2.5V, ID =-2A --- 95 120 VDS=-1.8V , ID=-1A --- 130 170 -0.3 -0.6 -1.0 V --- 3 --- mV/°C --- 2.2 --- S --- 4.8 8 --- 0.5 1 Qgd --- 1.9 4 Td(on) --- 3.5 7 --- 12.6 24 --- 32.6 62 Tf --- 8.4 16 Input Capacitance Ciss --- 350 510 Output Capacitance Coss --- 65 95 Reverse Transfer Capacitance Crss --- 50 75 Min. Typ. Max. Unit --- --- -3 A --- --- -6 A --- --- -1 V Off Characteristics Drain-Source Breakdown Voltage BVDSS Temperature Coefficient BVDSS △BVDSS/△TJ Drain-Source Leakage Current IDSS Gate-Source Leakage Current IGSS uA nA On Characteristics Static Drain-Source On-Resistance Gate Threshold Voltage VGS(th) Temperature Coefficient Forward Transconductance RDS(ON) VGS(th) △VGS(th) gfs VDS=0V, ID=-250uA VDS=10V , IS=-1A mΩ Dynamic and Switching Characteristics Total Gate Charge3, Gate-Source Charge3, Gate-Drain Charge3, 4 Qgs Tr 4 Turn-Off Delay Time3, Fall Time3, 4 4 Turn-On Delay Time3, Rise Time3, Qg 4 4 4 Td(off) VDS=-10V , VGS=-4.5V , ID=-3A VDD=-10V , VGS=-4.5V , RG=25Ω, ID=-1A VDS=-15V , VGS=0V , F=1MHz nC nS pF Drain-Source Diode Characteristics and Maximum Ratings Parameter Symbol Continuous Source Current IS Pulsed Source Current ISM Diode Forward Voltage VSD Conditions VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25°C Note: 1. Repetitive Rating: Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed, pulse width ≦ 300uS, duty cycle ≦ 2%. 3. Essentially independent of operating temperature. 2/5 SSF2215 20V Dual P-Channel MOSFETs Normalized On Resistance (mΩ) ID , Continuous Drain Current (A) Typical Electrical and Thermal Characteristics TJ , Junction Temperature (°C) Fig.2 Normalized RDS(ON) vs. TJ VGS , Gate to Source Voltage (V) Normalized Gate Threshold Voltage (V) TJ , Junction Temperature (°C) Fig.1 Continuous Drain Current vs. TJ Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform TJ, Juniction Temperature (°C) ID , Continuous Drain Current (A) Normalized Thermal Response (RθJA) Fig.3 Normalized Vth vs. TJ VDS , Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area Square Wave Pulse Duration (S) Fig.5 Normalized Transient Impedance 3/5 SSF2215 20V Dual P-Channel MOSFETs Typical Electrical and Thermal Characteristics VDS 90% 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.8 Gate Charge Waveform Fig.7 Switching Time Waveform 4/5 SSF2215 20V Dual P-Channel MOSFETs SOT-23-6L Package Outline Dimensions Symbol Dimensions In Inches Dimensions In Millimeters Min Max Min Max A1 0.000 0.100 0.000 0.004 A2 1.000 1.200 0.040 0.047 b 0.300 0.500 0.012 0.019 c 0.047 0.207 0.002 0.008 D 2.800 3.000 0.110 0.118 E 1.500 1.800 0.059 0.070 E1 2.600 3.000 0.103 0.118 e 0.950 TYP 0.037 TYP e1 1.900 TYP 0.075 TYP L1 θ www.goodarksemi.com 0.250 0° 0.550 0.010 8° 0° 5/5 0.021 8° Doc.USSSF2215xSP4.1 May. 2023