SSF2219Y
20V Dual P-Channel MOSFET
Main Product Characteristics
D1
D1
D2
G2
V(BR)DSS
-20V
S2
G2
G1
RDS(ON)
600mΩ
ID
-400mA
S1
G1
S2
S1
D2
SOT-563
Schematic Diagram
Features and Benefits
Advanced MOSFET process technology
Ideal for notebook, load switch, networking and hand-held devices
Low on-resistance with low gate charge
Fast switching and reverse body recovery
Description
The SSF2219Y utilizes the latest techniques to achieve high cell density and low on-resistance.
These features make this device extremely efficient and reliable for use in high efficiency switch
mode power supply and a wide variety of other applications.
Absolute Maximum Ratings (TC=25°C
unless otherwise specified)
Symbol
Max.
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±8
V
Parameter
Drain Current-Continuous (TC=25°C)
ID
Drain Current-Continuous (TC=100°C)
Drain Current-Pulsed1
Thermal Resistance, Junction-to-Ambient
Operating Junction Temperature Range
Storage Temperature Range
1/5
mA
A
312
mW
2.5
mW/°C
RθJA
400
°C/W
TJ
-55 To +150
°C
TSTG
-55 To +150
°C
PD
Power Dissipation-Derate above 25°C
-250
-1.6
IDM
Power Dissipation (TC=25°C)
-400
SSF2219Y
20V Dual P-Channel MOSFET
Electrical Characteristics (TJ=25°C
Parameter
Symbol
unless otherwise specified)
Conditions
Min.
Typ.
Max.
Unit
-20
-
-
V
-
-0.01
-
V/°C
VDS=-20V, VGS=0V,
TJ=25°C
-
-
-1
μA
VDS=-16V, VGS=0V,
TJ=125°C
-
-
-10
μA
VGS=±4.5V, VDS=0V
-
-
±2
μA
VGS=±8V, VDS=0V
-
-
±15
μA
VGS=-4.5V, ID=-0.3A
-
440
600
VGS=-2.5V, ID=-0.2A
-
610
850
VGS=-1.8V, ID=-0.1A
-
810
1200
VGS=-1.5V, ID=-0.1A
-
1020
1600
VGS=-1.2V, ID=-0.1A
-
1800
3000
-0.3
-0.6
-1.0
V
-
3
-
mV/°C
-
1
2
-
0.28
0.5
Qgd
-
0.18
0.4
td(on)
-
8
16
-
5.2
10
-
30
60
-
18
36
-
40
78
-
15
30
-
6.5
13
-
-
-0.4
A
-
-
-0.8
A
-
-
-1
V
On/Off Characteristics
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
BVDSS
△ BVDSS/△TJ
Drain-Source Leakage Current
IDSS
Gate-Source Leakage Current
Static Drain-Source On-Resistance
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IGSS
RDS(ON)
VGS(th)
△VGS(th)
VGS=0V, ID=-250uA
Reference to 25°C,
ID=-1mA
VGS=VDS, ID=-250uA
mΩ
Dynamic and Switching Characteristics
Total Gate Charge2,3
Gate-Source Charge
Qg
2,3
Gate-Drain Charge2,3
Turn-On Delay Time
2,3
Rise Time2,3
Turn-Off Delay Time
Qgs
tr
2,3
Fall Time2,3
td(off)
VDS=-10V, ID=-0.2A
VGS=-4.5V
VDD=-10V, RG=10Ω
VGS=-4.5V, ID=-0.2A
tf
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=-10V, VGS=0V,
F=1MHz
nC
nS
pF
Drain-Source Diode Characteristics and Maximum Ratings
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
IS
ISM
VG=VD=0V,
Force Current
VSD
VGS=0V, IS=-0.2A,
TJ=25°C
Notes:
1. Repetitive Rating: Pulsed width limited by maximum junction temperature.
2. Pulse test: pulse width ≦ 300uS, duty cycle ≦ 2%.
3. Essentially independent of operating temperature.
2/5
SSF2219Y
20V Dual P-Channel MOSFET
Typical Electrical and Thermal Characteristic Curves
VGS=-4.5V
-ID , Continuous Drain Current (A)
-ID, Continuous Drain Current (A)
3
VGS=-3V
2.5
VGS=-2.5V
2
1.5
VGS=-2V
VGS=-1.8V
1
VGS=-1.5V
0.5
VGS=-1.2V
0
0
1
2
3
4
-VDS Drain to Source Voltage (V)
TC , Case Temperature (°C)
Figure 1. Typical Output Characteristics
Normalized On Resistance
Normalized Gate Threshold Voltage
Figure 2. Continuous Drain Current vs. TC
TJ , Junction Temperature (°C)
TJ , Junction Temperature (°C)
Figure 4. Normalized Vth vs. TJ
Figure 3. Normalized RDS(ON) vs. TJ
1500
RDS(ON) , Turn-On Resistance (mohm)
RDS(ON) , Turn-On Resistance (mohm)
800
720
ID=100mA
640
560
ID=200mA
480
Tc=25℃
400
1.0
1.6
2.2
2.8
3.4
4.0
1300
VGS=-1.5V
1100
VGS=-1.8V
900
VGS=-2.5V
700
VGS=-4.5V
500
Tc=25℃
300
0.1
0.2
0.3
-ID, Drain Current (A)
-VGS , Gate to Source Voltage (V)
Figure 6. Turn-On Resistance vs. ID
Figure 5. Turn-On Resistance vs. VGS
3/5
0.4
0.5
SSF2219Y
20V Dual P-Channel MOSFET
Typical Electrical and Thermal Characteristic Curves
-VGS , Gate to Source Voltage (V)
100
Capacitance (pF)
Ciss
Coss
10
Crss
1
0.1
1
10
-VDS, Drain-Source Voltage(V)
Qg , Gate Charge (nC)
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
0.5
VDS=-3V
-V GS
-ID, Drain Current (A)
0.4
Qg
-10V /
-4.5V
0.3
Qgd
Qgs
0.2
0.1
Tc=150℃
Tc=125℃
Tc=75℃
Tc=25℃
Tc=-25℃
0
0
0 .5
1
1 .5
Gate Charge
2
-VGS , Gate to Source Voltage (V)
Figure 10. Gate Charge Waveform
Normalized Thermal Response
-ID , Continuous Drain Current (A)
Figure 9.Transfer Characteristics
10us
1
100us
0.1
1ms
10ms
100ms
DC
TC=25℃
0.01
0.1
1
10
Square Wave Pulse Duration (s)
-VDS, Drain to Source Voltage (V)
Figure 11. Normalized Transient Impedance
Figure 12. Maximum Safe Operation Area
4/5
SSF2219Y
20V Dual P-Channel MOSFET
Package Outline Dimensions
Symbol
SOT-563
Dimensions In Millimeters
Dimensions In Inches
MAX
MIN
MAX
MIN
A
0.600
0.500
0.024
0.020
b
0.300
0.150
0.012
0.006
c
0.180
0.100
0.007
0.004
D
1.700
1.500
0.067
0.059
E
1.250
1.100
0.049
0.043
E1
1.700
1.550
0.067
0.061
e
L
www.goodarksemi.com
0.5BSC
0.300
0.02BSC
0.100
0.012
5/5
0.004
Doc.USSSF2219YxSP3.4
Apr.2021
