SSF2319CJ1

SSF2319CJ1 20V P-Channel MOSFET D Main Product Characteristics VDSS -20V RDS(ON) 600mΩ (typ.) ID -450mA D G S G S Schematic Diagram SOT-523 Features and Benefits n Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast switching and reverse body recovery n 150°C operating temperature „ ESD protection up to 2KV n n n Description The SSF2319CJ1 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supplies and a wide variety of other applications. Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Symbol Max. Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Drain Current-Continuous (TC=25°C) ID Drain Current-Continuous (TC=100°C) -450 -280 mA Drain Current-Pulsed1 IDM -1.7 A Power Dissipation PD 312 mW RθJA 450 °C/W TJ -55 To +150 °C TSTG -55 To +150 °C Thermal Resistance, Junction-to-Ambient2 Operating Junction Temperature Range Storage Temperature Range 1/5 SSF2319CJ1 20V P-Channel MOSFET Electrical Characteristics (TA=25°C Parameter Symbol unless otherwise specified) Conditions Min. Typ. Max. Unit On / Off Characteristics Drain-Source Breakdown Voltage BVDSS Temperature Coefficient BVDSS -20 - - V Reference to 25°C, △BVDSS / △TJ ID=-1mA - -0.01 - V/°C VDS=-20V, VGS=0V - - -1 μA VGS=±6V, VDS=0V - - ±20 μA VGS=±4.5V, VDS=0V - - ±2 μA VGS=-4.5V, ID=-0.3A - 440 600 VGS=-2.5V, ID=-0.2A 610 850 VGS=-1.8V, ID=-0.1A 810 1200 VGS=-1.5V, ID=-0.1A 1020 1600 - 1800 3000 -0.3 -0.6 -1 V - 3 - mV/°C - 1 2 - 0.28 0.5 Drain-Source Leakage Current IDSS Gate-Source Leakage Current IGSS Static Drain-Source On-Resistance3 RDS(ON) VGS=0V, ID=-250uA VGS=-1.2V, ID=-0.1A Gate Threshold Voltage3 VGS(th) VGS(th) Temperature Coefficient3 △VGS(th) VGS=VDS, ID=-250uA mΩ Dynamic and Switching Characteristics Total Gate Charge4 Qg Gate-Source Charge4 Qgs Gate-Drain Charge4 Qgd - 0.18 0.4 Turn-On Delay Time4 td(on) - 8 16 - 5.2 10 - 30 60 - 18 36 - 40 78 - 15 30 - 6.5 13 Rise Time4 Turn-Off Delay Time4 Fall Time4 tr td(off) VDS=-10V, ID=-0.2A VGS=-4.5V VDD=-10V, RG=10Ω VGS=-4.5V, ID=0.2A tf Input Capacitance4 Clss Output Capacitance4 Coss Reverse Transfer Capacitance4 Crss VDS=-10V, VGS=0V, F=1MHz nC nS pF Drain-Source Diode Characteristics and Maximum Ratings Diode Forward Current2 IS VG=VD=0V, Force Current - - -400 mA Diode Forward Voltage3 VSD VGS=0V, IS=-0.2A - -0.8 -1 V Note: 1. 2. 3. 4. Repetitive rating: Pulsed width limited by maximum junction temperature. Surface Mounted on FR4 Board, t ≤ 10sec. Pulse test: pulse width ! 300us, duty cycle ! 2%. Guaranteed by design, not subject to production testing. 2/5 SSF2319CJ1 20V P-Channel MOSFET Normalized On Resistance -ID, Continuous Drain Current (A) Typical Electrical and Thermal Characteristics TJ, Junction Temperature (°C) TC, Case Temperature (°C) Figure 1. Drain Current vs. Tc -VGS, Gate to Source Voltage (V) Normalized Gate Threshold Voltage Figure 2. Normalized RDS(on) vs. TJ Qg, Gate Charge (nC) Figure 3. Normalized Vth vs. TJ Figure 4. Gate Charge Waveform Normalized Gate Threshold Voltage (V) -ID, Continuous Drain Current (A) TJ, Junction Temperature (°C) -VDS, Drain to Source Voltage (V) Square Wave Pulse Duration (S) Figure 5. Normalized Transient Response Figure 6. Safe Operation Area 3/5 SSF2319CJ1 20V P-Channel MOSFET Package Outline Dimensions (SOT-523) Symbol Dimensions in Millimeters Dimensions in Inches Min Max Min Max A 0.700 0.900 0.028 0.035 A1 0.000 0.100 0.000 0.004 A2 0.700 0.800 0.028 0.031 b 0.250 0.350 0.010 0.014 b1 0.150 0.250 0.006 0.010 c 0.100 0.200 0.004 0.008 D 1.500 1.750 0.059 0.069 E 0.700 0.900 0.028 0.035 E1 1.400 1.750 0.055 0.069 0.500 TYP e 0.020 TYP e1 0.900 1.100 0.035 0.043 L 0.300 0.460 0.012 0.018 L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 4/5 SSF2319CJ1 20V P-Channel MOSFET Recommended Pad Layout Unit:mm Order Information Device Package Marking SSF2319CJ1 SOT-523 F www.goodarksemi.com 5/5 Carrier Tape & Reel Quantity 3,000 pcs / Reel Doc.USSSF2319CJ1xSP3.2 Nov.2022