SSF6909

SSF6909 60V P-Channel MOSFET Main Product Characteristics D D V(BR)DSS -60V RDS(ON) 105mΩ ID G -3.2A S D G S SOT-223 Features and Benefits „ Advanced MOSFET process technology „ Ideal for motor drive, power tools and LED lighting „ Low on-resistance with low gate charge „ Fast switching and reverse body recovery Schematic Diagram Description The SSF6909 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications. Absolute Maximum Ratings (TC=25°C Parameter unless otherwise specified) Symbol Max. Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V -3.2 A -5 A Drain Current-Continuous(TA=25°C) ID Drain Current-Continuous(TC=70°C) Drain Current-Pulsed(TA=25°C)1 IDM -12.8 A Single Pulse Avalanche Energy2 EAS 25 mJ Single Pulse Avalanched Current2 IAS -18 A 2 W 5.4 W/°C Power Dissipation(TA=25°C) Power Dissipation(TC=25°C) PD Thermal Resistance, Junction-to-Ambient5 RθJA 62 °C/W Thermal Resistance, Junction-to-Case RθJC 23 °C/W Storage Temperature Range TSTG -55 To +150 °C TJ -55 To +150 °C Operating Junction Temperature Range 1/6 SSF6909 60V P-Channel MOSFET Electrical Characteristics (TJ=25°C Parameter Symbol unless otherwise specified) Conditions Min. Typ. Max. Unit -60 - - V - -0.05 - V/°C - - -1 μA - - -10 μA VGS=±20V, VDS=0V - - ±100 nA VGS=-10V, ID=-3A - 87 105 VGS=-4.5V, ID=-2A - 107 140 -1.0 -1.6 -2.5 V - 3 - mV/°C - 5.5 - S - 10 15 - 1.6 3.2 Off Characteristics Drain-Source Breakdown Voltage BVDSS Temperature Coefficient Drain-Source Leakage Current Gate-Source Leakage Current BVDSS △BVDSS/△TJ IDSS IGSS VGS=0V, ID=-250μA Reference to 25°C, ID=-1mA VDS=-60V , VGS=0V, TJ=25°C VDS=-48V , VGS=0V, TJ=125°C On Characteristics Static Drain-Source OnResistance RDS(ON) VGS(th) Temperature Coefficient △VGS(th) Gate Threshold Voltage Forward Transconductance VGS(th) gFS VDS=VGS, ID=-250μA VDS=-10V, ID=-3A mΩ Dynamic and Switching Characteristics Total Gate Charge3,4 Qg VDS=-30V, ID=-2A, VGS=-10V nC Gate-Source Charge3,4 Qgs Gate-Drain Charge3,4 Qgd - 3 6 td(on) - 8 16 - 15.4 30 - 42.8 80 - 8.4 16 - 785 1300 - 175 300 - 112 220 - 36 - Ω - - -3.2 A - - -6.4 A - - -1 V Turn-On Delay Time3,4 Rise Time3,4 Turn-Off Delay Time3,4 Fall Time3,4 Input Capacitance tr td(off) tf Clss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance VDD=-30V, RG=6Ω VGS=-10V, ID=-1A Rg VDS=-30V, VGS=0V, F=1MHz VGS=0V, VDS=0V, F=1MHz nS pF Drain-Source Diode Characteristics and Maximum Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage IS ISM VSD VG=VD=0V, Force Current VGS=0V, IS=-1A, TJ=25°C Notes: 1. 2. 3. 4. 5. Repetitive Rating: Pulsed width limited by maximum junction temperature. VDD=-25V, VGS=-10V, L=0.1mH, IAS=-18A, RG=25,Starting TJ=25°C. The data tested by pulsed, pulse width ≦ 300uS, duty cycle ≦ 2%. Essentially independent of operating temperature. Thermal resistance, Junction-to-Ambient measured in board size of 1inch x 1inch, 1oz copper. 2/6 SSF6909 60V P-Channel MOSFET -ID , Continuous Drain Current (A) Normalized On Resistance (mΩ) Typical Electrical and Thermal Characteristic Curves TJ , Junction Temperature (°C) Fig.1 Continuous Drain Current vs. TJ Fig.2 Normalized RDS(ON) vs. TJ Normalized Gate Threshold Voltage (V) -VGS , Gate to Source Voltage (V) TJ , Junction Temperature (°C) Qg , Gate Charge (nC) Fig.3 Normalized Vth vs. TJ Fig.4 Gate Charge Waveform Normalized Thermal Response (RθJC) -ID , Continuous Drain Current (A) TJ , Junction Temperature (°C) -VDS, Drain to Source Voltage (V) Square Wave Pulse Duration (S) Fig.6 Maximum Safe Operation Area Fig.5 Normalized Transient Impedance 3/6 SSF6909 60V P-Channel MOSFET Typical Electrical and Thermal Characteristic Curves Fig.8 EAS Waveform Fig.7 Switching Time Waveform 4/6 SSF6909 60V P-Channel MOSFET Package Outline Dimensions Symbol SOT-223 Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 1.800 1.520 0.071 0.060 A1 0.100 0.000 0.004 0.000 A2 1.700 1.500 0.067 0.059 b c 0.820 0.660 0.032 0.026 0.350 0.250 0.014 0.010 D 6.400 6.200 0.252 0.244 D1 3.100 2.900 0.122 0.114 E 3.700 3.300 0.146 0.130 E1 7.070 6.830 0.278 0.269 e 2.30(BSC) 0.091(BSC) e1 4.700 4.500 0.185 0.177 L 1.150 0.900 0.045 0.035 θ 10° 0° 5/6 10° 0° SSF6909 60V P-Channel MOSFET Recommended Pad Layout unit: mm www.goodarksemi.com 6/6 Doc.USSSF6909xSP5.0 Aug.2020