SSFD3906

SSFD3906 30V N-Channel MOSFET D Main Product Characteristics BVDSS 30V RDS(ON) 6mΩ ID 80A D G G Schematic Diagram TO-252 (DPAK) Features and Benefits § S S Advanced MOSFET process technology § Ideal for high efficiency switched mode power supplies § Low on-resistance with low gate charge § Fast switching and reverse body recovery Description The SSFD3906 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications. Absolute Maximum Ratings (TC=25°C Parameter unless otherwise specified) Symbol Max. Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous (TC=25°C) ID Drain Current-Continuous (TC=100°C) 80 51 A Drain Current-Pulsed1 IDM 320 A Single Pulse Avalanche Energy2 EAS 88 mJ Single Pulse Avalanche Current2 IAS 42 A 54 W 0.43 W/°C Power Dissipation (TC=25°C) PD Power Dissipation-Derate above 25°C Thermal Resistance, Junction-to-Ambient RθJA 62 °C/W Thermal Resistance, Junction-to-Case RθJC 2.3 °C/W Operating Junction Temperature Range TJ -55 To +150 °C TSTG -55 To +150 °C Storage Temperature Range 1/5 SSFD3906 30V N-Channel MOSFET Electrical Characteristics (TJ=25°C Parameter Symbol unless otherwise specified) Conditions Min. Typ. Max. Unit 30 - - V - 0.04 - V/°C - - 1 μA VDS=24V, VGS=0V, TJ=125°C - - 10 μA VGS=±20V, VDS=0V - - ±100 nA VGS=10V, ID=20A - 4.8 6 VGS=4.5V, ID=10A - 6.5 9 1 1.6 2.5 V - -4 - mV/°C - 18 - S - 11.1 - - 1.85 - Qgd - 6.8 - td(on) - 7.5 - - 14.5 - - 35.2 - - 9.6 - - 1160 - - 200 - - 180 - - 2.5 - Ω 20 - - mJ - - 80 A - - 320 A - - 1 V On/Off Characteristics Drain-Source Breakdown Voltage BVDSS BVDSS Temperature Coefficient △BVDSS/△TJ Drain-Source Leakage Current IDSS Gate-Source Leakage Current IGSS Static Drain-Source On-Resistance3 RDS(ON) Gate Threshold Voltage VGS(th) VGS(th) Temperature Coefficient △VGS(th) Forward Transconductance gfs VGS= 0V, ID=250μA Reference to 25°C, ID=1mA VDS=30V, VGS=0V, TJ=25°C VGS=VDS, ID =250μA VDS=10V, ID=10A mΩ Dynamic and Switching Characteristics Total Gate Charge3,4 Gate-Source Charge Qg 3,4 Gate-Drain Charge3,4 Turn-On Delay Time 3,4 Rise Time3,4 Turn-Off Delay Time Qgs tr 3,4 Fall Time3,4 td(off) VDD=15V, RG=3.3Ω VGS=10V, ID=15A tf Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance VDS=15V, ID=20A VGS=4.5V Rg VDS=25V, VGS=0V, F=1MHz VGS=0V, VDS=0V, F=1MHz nC nS pF Guaranteed Avalanche Energy Single Pulse Avalanche Energy EAS VDD=25V, L=0.1mH, IAS=20A Drain-Source Diode Characteristics and Maximum Ratings Continuous Source Current IS Pulsed Source Current3 ISM Diode Forward Voltage3 VSD VG=VD=0V, Force Current VGS=0V, IS=1A, TJ=25°C Note: 1. 2. 3. 4. Repetitive rating: Pulsed width limited by maximum junction temperature. VDD=25V, VGS=10V, L=0.1mH, IAS=42A, RG=25Ω, starting TJ=25°C. Pulse test: pulse width !300us, duty cycle !2%. Essentially independent of operating temperature. 2/5 SSFD3906 30V N-Channel MOSFET Normalized On Resistance ID , Continuous Drain Current (A) Typical Electrical and Thermal Characteristic Curves TJ , Junction Temperature (°C) Figure 1. Continuous Drain Current vs. TC Figure 2. Normalized RDSON vs. TJ Normalized Gate Threshold Voltage VGS , Gate to Source Voltage (V) TC , Case Temperature (°C) Qg , Gate Charge (nC) TJ , Junction Temperature (°C) Figure 4. Gate Charge Waveform Normalized Thermal Response ID , Continuous Drain Current (A) Figure 3. Normalized Vth vs. TJ VDS, Drain to Source Voltage (V) Square Wave Pulse Duration(s) Figure 6. Maximum Safe Operation Area Figure 5. Normalized Transient Impedance 3/5 SSFD3906 30V N-Channel MOSFET Typical Electrical and Thermal Characteristic Curves Figure 8. EAS Waveform Figure 7. Switching Time Waveform 4/5 SSFD3906 30V N-Channel MOSFET Package Outline Dimensions TO-252(DPAK) Symbol A A1 A2 B C C1 D E F F1 L L1 L2 L3 θ www.goodarksemi.com Dimensions In Millimeters Dimensions In Inches Min Max Min Max 2.20 2.40 0.087 0.094 0.91 1.11 0.036 0.044 0.00 0.15 0.000 0.006 6.50 6.70 0.256 0.264 0.46 0.580 0.018 0.230 0.46 0.580 0.018 0.030 5.10 5.46 0.201 0.215 2.186 2.386 0.086 0.094 0.74 0.94 0.029 0.037 0.660 0.860 0.026 0.034 9.80 10.40 0.386 0.409 2.9REF 0.114REF 6.00 6.20 0.236 0.244 0.60 1.00 0.024 0.039 3° 9° 3° 5/5 9° Doc.USSSFD3906xSP3.2 Dec.2020