SSFD6035

SSFD6035 60V P-Channel MOSFET Main Product Characteristics VDS -60V RDS(ON) 40mΩ ID -26A D D G G S S TO-252 (DPAK) Schematic Diagram Features and Benefits § Advanced MOSFET process technology § Ideal for high efficiency switched mode power supplies § Low on-resistance with low gate charge § Fast switching and reverse body recovery Description The SSFD6035 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications. Absolute Maximum Ratings (TA=25°C unless otherwise specified) Symbol Max. Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V Parameter Drain Current-Continuous (25°C) ID Drain Current-Continuous (70°C) -26 -20 A Drain Current-Pulsed1 IDM -60 A Maximum Power Dissipation PD 60 W RθJA 25 °C/W TJ -55 To +175 °C TSTG -55 To +175 °C Thermal Resistance, Junction-to-Ambient 2 Operating Junction Temperature Range Storage Temperature Range 1/6 SSFD6035 60V P-Channel MOSFET Electrical Characteristics (TA=25°C unless otherwise noted) Parameter Symbol Conditions Min. Typ. Max. Unit On/Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=-250uA -60 - - V Drain-Source Leakage Current IDSS VDS= -48V, VGS=0V - - -1 μA Gate-Source Leakage Current IGSS VGS=±20V, VDS=0V - - ±100 nA VGS= -10V, ID=-20A - 31 40 VGS= -4.5V, ID=-20A - 42 55 VGS=VDS, ID =-250uA -1 -1.8 -2.5 V VDS= -5V, ID=-20A 5 - - S - 48 - - 11 - Qgd - 10 - td(on) - 14 - - 20 - - 40 - - 19 - - 3060 - - 300 - - 205 - - -0.72 -1 Static Drain-Source On-Resistance 3 RDS(ON) Gate Threshold Voltage 3 VGS(th) Forward Transconductance 3 gfs mΩ Dynamic and Switching Characteristics Total Gate Charge4 Gate-Source Charge Qg 4 Gate-Drain Charge4 Turn-On Delay Time 4 Rise Time4 Turn-Off Delay Time Qgs tr 4 Fall Time4 td(off) VDS=-30V, ID=-20A, VGS=-10V VDS=-30V, RGEN=3Ω, VGS=-10V, ID=1A tf Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=-30V, VGS=0V, F=1MHz nC nS pF Drain-Source Diode Characteristics and Maximum Ratings Diode Forward Voltage 3 VSD VGS= 0V, IS=-1A NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in2 FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing. 2/6 V SSFD6035 60V P-Channel MOSFET Typical Electrical and Thermal Characteristics ton tr td(on) toff tf td(off) 90% VOUT 90% INVERTED 10% 10% 90% VIN 50% 50% 10% PULSE WIDTH Figure 2. Switching Waveforms PD, Power (W) -ID, Drain Current (A） Figure 1. Switching Test Circuit TJ, Junction Temperature(°C ) TJ, Junction Temperature(°C ) Figure 4. Drain Current ID, Drain Current (A) RDS(ON), On-Resistance (mΩ) Figure 3. Power Dissipation -ID, Drain Current (A) -VDS, Drain-Source Voltage (V) Figure 6. Drain-Source On-Resistance Figure 5. Output Characteristics 3/6 SSFD6035 60V P-Channel MOSFET -ID, Drain Current (A) Normalized On-Resistance Typical Electrical and Thermal Characteristics TJ, Junction Temperature (°C ) -VGS, Gate-Source Voltage (V) Figure 8. Drain-Source On-Resistance C, Capacitance (pF) RDS(ON), On-Resistance (mΩ) Figure 7. Transfer Characteristics -VGS, Gate-Source Voltage (V) Figure 9. RDS(ON) vs VGS Figure 10. Capacitance vs VDS -VGS, Gate-Source Voltage (V) -Is, Reverse Drain Current (A) -VDS, Drain-Source Voltage (V) -VSD, Source-Drain Voltage (V) Qg, Gate Charge (nC) Figure 12. Source - Drain Diode Forward Voltage Figure 11. Gate Charge 4/6 SSFD6035 60V P-Channel MOSFET -ID, Drain Current (A) Typical Electrical and Thermal Characteristics VDS, Drain-Source Voltage (V) ZthJA Normalized Transient Thermal Resistance Figure 13. Safe Operation Area Square Wave Pluse Duration (s) Figure 14. Normalized Maximum Transient Thermal Impedance 5/6 SSFD6035 60V P-Channel MOSFET Package Outline Dimensions (TO-252/DPAK) Symbol Dimensions in Milimeters (Unit:mm) Symbol Dimensions in Milimeters (Unit:mm) Min Nom Max A 2.20 2.30 2.38 E1 4.70 - - A1 0.00 - 0.10 e 2.186 2.286 2.386 A2 0.90 1.01 1.10 H 9.80 10.10 10.40 1.40 1.50 1.70 Min Nom Max b 0.72 - 0.85 L b1 0.71 0.76 0.81 L1 2.90 REF b2 0.72 - 0.90 L2 0.51 BSC b3 5.13 5.33 5.46 L3 0.90 - 1.25 c 0.47 - 0.60 L4 0.60 0.80 1.00 c1 0.46 0.51 0.56 L5 0.15 - 0.75 c2 0.47 - 0.60 L6 D 6.00 6.10 6.20 θ 0° - 8° D1 5.25 - - θ1 5° 7° 9° θ2 5° 7° 9° E 6.50 6.60 6.70 1.80 REF NOTES： 1. 2. 3. 4. Dimensions are inclusive of plating Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. Dimension L is measured in gauge plane. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodarksemi.com 6/6 Doc.USSSFD6035xGN4.0 Oct.2021