SSFD6909

SSFD6909 60V P-Channel MOSFET Main Product Characteristics V(BR)DSS -60V RDS(ON) 105mΩ ID D D G -10A S G S Schematic Diagram TO-252 (DPAK) Features and Benefits „ Advanced MOSFET process technology „ Ideal for high efficiency switched mode power supplies „ Low on-resistance with low gate charge „ Fast switching and reverse body recovery Description The SSFD6909 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications. Absolute Maximum Ratings (TC=25°C unless otherwise specified) Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V -10 A -6.3 A -40 A Parameter Drain Current – Continuous (TC=25°C) Drain Current – Continuous (TC=100°C) Drain Current – Pulsed1 Single Pulse Avalanche ID IDM Energy2 EAS 25 mJ Single Pulse Avalanche Current2 IAS -18 A 32 W Power Dissipation (TC=25°C) Power Dissipation – Derate above 25°C Storage Temperature Range Operating Junction Temperature Range PD 0.25 W/°C TSTG -50 to +150 °C TJ -50 to +150 °C Thermal Characteristics Parameter Symbol Typ. Max. Unit Thermal Resistance Junction to Ambient RθJA --- 62 °C/W Thermal Resistance Junction to Case RθJC --- 3.84 °C/W 1/5 SSFD6909 60V P-Channel MOSFET Electrical Characteristics (TJ=25°C Parameter Symbol unless otherwise specified) Conditions Min. Typ. Max. Unit -60 --- --- V △BVDSS/ △TJ Reference to 25°C, ID=-1mA --- -0.05 --- V/°C VDS=-60V, VGS=0V, TJ=25°C --- --- -1 uA VDS=-48V, VGS=0V, TJ=125°C --- --- -10 uA VGS=±20V, VDS=0V --- --- ±100 nA VGS=-10V, ID=-6A --- 87 105 mΩ VGS=-4.5V, ID=-3A --- 120 145 mΩ -1 -1.6 -2.5 V --- 3 --- mV/°C --- 5.5 --- S --- 10 15 --- 1.6 3.2 Off Characteristics Drain-Source Breakdown Voltage BVDSS Temperature Coefficient BVDSS Drain-Source Leakage Current IDSS Gate-Source Leakage Current IGSS VGS=0V, ID=-250uA On Characteristics Static Drain-Source On-Resistance RDS(ON) Gate Threshold Voltage VGS(th) VGS(th) Temperature Coefficient Forward Transconductance △VGS(th) gfs VGS=VDS, ID=-250uA VDS=-10V, ID=-6A Dynamic and Switching Characteristics Total Gate Charge3, Qg 4 VDS=-30V, VGS=-10V, ID=-4A Gate-Source Charge3, 4 Qgs Gate-Drain Charge3, 4 Qgd --- 3 6 Td(on) --- 8 16 --- 15.4 30 --- 42.8 80 Tf --- 8.4 16 Input Capacitance Ciss --- 785 1300 Output Capacitance Coss --- 175 300 Reverse Transfer Capacitance Crss --- 112 220 Gate Resistance Rg --- 36 --- Ω --- --- -10 A --- --- -20 A --- --- -1 V Turn-On Delay Time3, Rise 4 Time3, 4 Turn-Off Delay Time3, Fall Time3, Tr 4 4 Td(off) VDD=-30V, VGS=-10V, RG=6Ω, ID=-1A VDS=-30V, VGS=0V, F=1MHz VGS=0V, VDS=0V, F=1MHz nC nS pF Drain-Source Diode Characteristics and Maximum Ratings Continuous Source Current IS Pulsed Source Current ISM Diode Forward Voltage VSD VG=VD=0V, Force Current VGS=0V, IS=-1A, TJ=25°C Note: 1. Repetitive Rating: Pulsed width limited by maximum junction temperature. 2. VDD=-25V, VGS=-10V, L=0.1mH, IAS=-18A, RG=25, Starting TJ=25°C. 3. The data tested by pulsed, pulse width ≦ 300uS, duty cycle ≦ 2%. 4. Essentially independent of operating temperature. 2/5 SSFD6909 60V P-Channel MOSFET Fig.2 TJ , Junction Temperature (°C) Normalized V th vs. TJ Fig.4 Normalized RDS(ON) vs. TJ Qg , Gate Charge (nC) Gate Charge Waveform -ID , Continuous Drain Current (A) Normalized Thermal Response (RθJC) Fig.3 TJ , Junction Temperature (°C) TC , Case Temperature (°C) Continuous Drain Current vs. TC -VGS , Gate to Source Voltage (V) Normalized Gate Threshold Voltage Fig.1 Normalized On Resistance -ID , Continuous Drain Current (A) Typical Electrical and Thermal Characteristic Curves -VDS , Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area Square Wave Pulse Duration (S) Fig.5 Normalized Transient Impedance 3/5 SSFD6909 60V P-Channel MOSFET Typical Electrical and Thermal Characteristic Curves VDS 90% 10% VGS Td(on) Tr Ton Fig.7 Td(off) Tf Toff Switching Time Waveform Fig.8 4/5 EAS Waveform SSFD6909 60V P-Channel MOSFET TO-252 (DPAK) Package Outline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 2.400 2.200 0.094 0.087 A1 1.110 0.910 0.044 0.036 A2 0.150 0.000 0.006 0.000 B 6.800 6.400 0.268 0.252 C 0.580 0.450 0.023 0.018 C1 0.580 0.460 0.023 0.018 D 5.500 5.100 0.217 0.201 E 2.386 2.186 0.094 0.086 F 0.940 0.600 0.037 0.024 F1 0.860 0.500 0.034 0.020 L 10.400 9.400 0.409 0.370 L1 3.000 2.400 0.118 0.094 L2 6.200 5.400 0.244 0.213 L3 1.200 0.600 0.047 0.024 θ 9° 3° 9° 3° www.goodarksemi.com 5/5 Doc.USSSFD6909xSP3.0 Jun.2019