SSFH6538

SSFH6538 650V N-Channel MOSFET Main Product Characteristics V(BR)DSS D 650V G 89mΩ(Typ.) RDS(ON) 99mΩ(Max.) ID G 38A D S S Schematic Diagram TO-220 Features and Benefits „ Advanced MOSFET process technology Ideal for battery operated systems, load switching, power converters and other general purpose applications „ Low on-resistance with low gate charge „ Fast switching and reverse body recovery „ Description The SSFH6538 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications. Absolute Maximum Ratings and Thermal Characteristics (TC=25°C unless otherwise specified) Parameter Symbol Value Unit Drain-Source Voltage (VGS=0V） VDS 650 V Gate-Source Voltage (VDS=0V) AC (f>1 Hz) VGS ±30 V Continuous Drain Current at Tc=25°C ID (DC) 38 A Continuous Drain Current at Tc=100°C ID (DC) 24 A IDM (pluse) 152 A 322 W 2.58 W/°C 841 mJ Pulsed Drain Current1 Maximum Power Dissipation(Tc=25°C) PD Derate above 25°C Single Pulse Avalanche Energy2 Avalanche EAS Current1 IAR 7 A Repetitive Avalanche Energy, tAR Limited by TJMAX1 EAR 3.9 mJ Drain Source Voltage Slope, VDS≤480V, dv/dt 50 V/nS Reverse Diode dv/dt, VDS≤480V, ISD