SSFL0954

SSFL0954 100V N-Channel MOSFET Main Product Characteristics D D V(BR)DSS 100V RDS(ON) 310mΩ 1.7A ID G S G D S Schematic Diagram SOT-223 Features and Benefits „ Advanced MOSFET process technology „ Ideal for high efficiency switched mode power supplies „ Low on-resistance with low gate charge „ Fast switching and reverse body recovery Description The SSFL0954 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications. Absolute Maximum Ratings (TC=25°C Parameter unless otherwise specified) Symbol Max. Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous (TC=25°C) ID Drain Current-Continuous (TC=100°C) 1.7 1.08 A Drain Current-Pulsed1 IDM 6.8 A Single Pulse Avalanche Energy2 EAS 25 mJ 1.76 W 0.014 W/°C Power Dissipation (TC=25°C) PD Power Dissipation-Derate above 25°C Thermal Resistance, Junction-to-Ambient RθJA 70 °C/W Thermal Resistance, Junction-to-Case RθJC 30 °C/W Operating Junction Temperature Range TJ -50 To +150 °C TSTG -50 To +150 °C Storage Temperature Range 1/5 SSFL0954 100V N-Channel MOSFET Electrical Characteristics (TJ=25°C Parameter Symbol unless otherwise specified) Conditions Min. Typ. Max. Unit 100 - - V - 0.09 - V/°C - - 1 μA VDS= 80V, VGS=0V, TJ=125°C - - 10 μA VGS= ±20V, VDS=0V - - ±100 nA VGS= 10V, ID=1A - 260 310 VGS= 4.5V, ID=0.5A - 270 320 1.2 1.8 2.5 V - -5 - mV/°C - 2.3 - S - 9 18 - 2.3 4.6 On/Off Characteristics Drain-Source Breakdown Voltage BVDSS BVDSS Temperature Coefficient △BVDSS /△TJ Drain-Source Leakage Current IDSS Gate-Source Leakage Current IGSS Static Drain-Source On-Resistance RDS(ON) Gate Threshold Voltage VGS(th) VGS(th) Temperature Coefficient △VGS(th) Forward Transconductance gfs VGS=0V, ID=250μA Reference to 25°C, ID=1mA VDS= 100V, VGS=0V, TJ=25°C VGS=VDS, ID=250μA VDS= 10V, ID=2A mΩ Dynamic and Switching Characteristics Total Gate Charge2,3 Qg Gate-Source Charge2,3 Qgs Gate-Drain Charge2,3 Qgd - 1.1 2.5 Turn-On Delay Time2,3 td(on) - 5.2 10 - 6.8 12 - 14.5 28 - 2.1 5 - 492 800 - 27 50 - 15 25 Rise Time2,3 Turn-Off Delay Time2,3 Fall Time2,3 tr td(off) VDS= 50V, ID=1A, VGS=10V VDD=50V, RG=3.3Ω, VGS=10V, ID=1A tf Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS= 25V, VGS=0V, F=1MHz nC nS pF Gate Resistance Rg VGS= 0V, VDS=0V, F=1MHz Drain-Source Diode Characteristics and Maximum Ratings - 2.8 5.6 Ω Continuous Source Current IS - - 4 A - - 8 A - - 1 V Pulsed Source Current ISM Diode Forward Voltage VSD VG=VD=0V, Force Current VGS= 0V, IS=1A, TJ=25°C Note: 1. Repetitive rating: Pulsed width limited by maximum junction temperature. 2. Pulse test: pulse width ≤300us,duty cycle≤2%. 3. Essentially independent of operating temperature. 2/5 SSFL0954 100V N-Channel MOSFET Normalized On Resistance ID , Continuous Drain Current (A) Typical Electrical and Thermal Characteristic Curves TC , Case Temperature (°C) Figure 2. Normalized RDS(ON) vs. TJ Normalized Gate Threshold Voltage VGS , Gate to Source Voltage (V) TJ , Junction Temperature (°C) Figure 1. Continuous Drain Current vs. TC Qg , Gate Charge (nC) TJ , Junction Temperature (°C) Figure 4. Gate Charge Waveform Normalized Thermal Response ID , Continuous Drain Current (A) Figure 3. Normalized Vth vs. TJ VDS, Drain to Source Voltage (V) Square Wave Pulse Duration(s) Figure 6. Maximum Safe Operation Area Figure 5. Normalized Transient Impedance 3/5 SSFL0954 100V N-Channel MOSFET Typical Electrical and Thermal Characteristic Curves Figure 8. Gate Charge Waveform Figure 7. Switching Time Waveform 4/5 SSFL0954 100V N-Channel MOSFET Package Outline Dimensions Symbol SOT-223 Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 1.520 1.800 0.060 0.071 A1 0.000 0.100 0.000 0.004 A2 1.500 1.700 0.059 0.067 b 0.660 0.820 0.026 0.032 c 0.250 0.350 0.010 0.014 D 6.200 6.400 0.244 0.252 D1 2.900 3.100 0.114 0.122 E 3.300 3.700 0.130 0.146 E1 6.830 7.070 0.269 0.278 e 2.300 (BSC) 0.091 (BSC) e1 4.500 4.700 0.177 0.185 L 0.900 1.150 0.035 0.045 θ 0˚ 10˚ 0˚ 10˚ www.goodarksemi.com 5/5 Doc.USSSFL0954xSP4.3 Dec.2020