SSFL6912

SSFL6912 60V N-Channel MOSFET Main Product Characteristics V(BR)DSS 60V RDS(ON) 75mΩ D D G S 5A ID G D S SOT-223 Features and Benefits „ Advanced MOSFET process technology „ Ideal for high efficiency switched mode power supplies „ Low on-resistance with low gate charge „ Fast switching and reverse body recovery Schematic Diagram Description The SSFL6912 utilizes the latest techniques to achieve high cell density and low on-resistance. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications. Absolute Maximum Ratings (TC=25°C Parameter unless otherwise specified) Symbol Max. Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous (TA=25°C) Drain Current-Continuous (TA=70°C) ID 5 4 A Drain Current-Pulsed1 IDM 20 A Single Pulse Avalanche Energy2 EAS 8 mJ Single Pulse Avalanche Current2 IAS 12.8 A 1.79 W 0.014 W/°C RθJA 70 °C/W TJ -55 To +150 °C TSTG -55 To +150 °C Power Dissipation (TA=25°C) Power Dissipation-Derate above 25°C Thermal Resistance, Junction-to-Ambient Operating Junction Temperature Range Storage Temperature Range PD 1/5 SSFL6912 60V N-Channel MOSFET Electrical Characteristics (TJ=25°C Parameter Symbol unless otherwise specified) Conditions Min. Typ. Max. Unit 60 - - V - 0.05 - V/°C - - 1 μA - - 10 μA VGS=±20V, VDS=0V - - ±100 nA VGS=10V, ID=5A - 60 75 VGS=4.5V, ID=3A - 70 90 1.2 1.8 2.5 V - -5 - mV/°C - 7 - S - 4.6 8 - 0.4 3 Qgd - 2 4 td(on) - 2.9 6 - 9.5 18 - 18.4 35 - 5.3 10 - 360 540 - 30 45 - 20 30 - 2 4 Ω - - 5 A - - 20 A - - 1 V - 25 - nS - 15 - nC On/Off Characteristics Drain-Source Breakdown Voltage BVDSS BVDSS Temperature Coefficient △BVDSS/△TJ Drain-Source Leakage Current IDSS Gate-Source Leakage Current IGSS Static Drain-Source On-Resistance RDS(ON) Gate Threshold Voltage VGS(th) VGS(th) Temperature Coefficient △VGS(th) Forward Transconductance gfs VGS=0V, ID=250μA Reference to 25°C, ID=1mA VDS=60V, VGS=0V, TJ=25°C VDS=48V, VGS=0V, TJ=125°C VGS=VDS, ID=250μA VDS=10V, ID=3A mΩ Dynamic and Switching Characteristics Total Gate Charge2,3 Gate-Source Charge Qg 2,3 Gate-Drain Charge2,3 Turn-On Delay Time 2,3 Rise Time2,3 Turn-Off Delay Time Qgs tr 2,3 Fall Time2,3 td(off) tf Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg VDS=30V, ID=3A, VGS=10V VDD=30V, RG=6Ω, VGS=10V, ID=3A VDS= 30V, VGS=0V, F=1MHz VGS=0V, VDS=0V, F=1MHz nC nS pF Drain-Source Diode Characteristics and Maximum Ratings Continuous Source Current IS Pulsed Source Current ISM Diode Forward Voltage VSD Reverse Recovery Time2 trr Reverse Recovery Charge2 Qrr VG=VD=0V, Force Current VGS=0V, IS=1A, TJ=25°C VR=50V, IS=3A, di/dt=100A/μs, TJ=25°C Note: 1. Repetitive rating: Pulsed width limited by maximum junction temperature. 2. VDD=25V, VGS=10V, L=0.1mH, IAS=12.8A, RG=25Ω,starting TJ=25°C. 3. Pulse test: pulse width ≤300us,duty cycle≤2%. 4. Essentially independent of operation temperature. 2/5 SSFL6912 60V N-Channel MOSFET Typical Electrical and Thermal Characteristic Curves 5 VGS=3.3V ID , Continuous Drain Current (A) ID , Continuous Drain Current (A) 5 VGS=3V 4 3 2 VGS=2.7V 1 VGS=2.5V 4 3 2 1 0 0 0 0.6 1.2 1.8 2.4 25 3 100 125 150 Figure 2. Continuous Drain Current vs. TC Figure 1. Typical Output Characteristics Normalized Gate Threshold Voltage 2.5 2 1.5 1 0.5 1.4 1.2 1 0.8 0.6 0.4 0 -50 0 50 100 -50 150 TJ , Junction Temperature (°C) 0 50 100 150 TJ , Junction Temperature (°C) Figure 3. Normalized RDSON vs. TJ Figure 4. Normalized Vth vs. TJ 70 72 RDS(ON) , Turn-On Resistance (mΩ) RDS(ON) , Turn-On Resistance (mΩ) 75 TC , Case Temperature (°C) VDS, Drain to Source Votage (V) Normalized On Resistance 50 67 ID=5A 64 61 ID=1A 58 Tc=25℃ 55 VGS=4.5V 69 66 VGS=6V 63 VGS=10V 60 Tc=25℃ 57 0 2 4 6 8 10 1 2 3 ID , Drain Current (A) VGS , Gate to Source Voltage (V) Figure 6. Turn-On Resistance vs. ID Figure 5. Turn-On Resistance vs. VGS 3/5 4 5 SSFL6912 60V N-Channel MOSFET Typical Electrical and Thermal Characteristic Curves 10 Ciss 100 Coss Crss 10 1 VGS , Gate to Source Voltage (V) Capacitance (pF) 1000 ID=3A VDS=30V 8 6 4 2 0 0.1 1 0 10 1 2 3 4 5 Qg , Gate Charge (nC) VDS , Drain to Source Voltage (V) Figure 8. Gate Charge Characteristics Figure 7. Capacitance Characteristics ID , Continuous Drain Current (A) Normalized Thermal Response 100 1 0.1 0.5 0.2 0.1 0.05 0.02 0.01 NOTES: DUTY FACTOR: D = t1/t2 SINGLE PULSE 0.01 0.00001 10 10us 1 100us 1ms 0.1 10ms 100ms DC TC=25℃ 0.01 0.0001 0.001 0.01 0.1 1 0.1 1 10 100 VDS , Drain to Source Voltage (V) Square Wave Pulse Duration (s) Figure 10. Maximum Safe Operation Area Figure 9. Normalized Transient Impedance BVDSS IAS VGS Figure 11. Switching Time Waveform Figure 12. EAS Waveform 4/5 VDD SSFL6912 60V N-Channel MOSFET Package Outline Dimensions SOT-223 Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 1.800 1.500 0.071 0.060 A1 0.120 0.000 0.005 0.000 A2 1.750 1.450 0.069 0.057 b 0.820 0.600 0.032 0.024 c 0.350 0.200 0.014 0.008 D 6.700 6.200 0.264 0.244 D1 3.100 2.900 0.122 0.114 E 3.700 3.300 0.146 0.130 E1 7.300 6.700 0.287 0.264 e 2.30(BSC) 0.091(BSC) e1 4.700 4.400 L 1.150 0.900 θ 10° 0° www.goodarksemi.com 0.185 0.045 10° 5/5 0.173 0.035 0° Doc.USSSFL6912xSP3.2 Oct.2020