SSFP10N10

SSFP10N10 StarMOST Power MOSFET ■ ■ Extremely high dv/dt capability Low Gate Charge Qg results in Simple Drive Requirement 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability VDSS = 100V ID25 = 9.2A RDS(ON) = 0.2Ω ■ ■ ■ ■ Description StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology. Pin1–Gate Pin2–Drain Pin1–Source Application ■ Switching application Absolute Maximum Ratings Parameter ID@Tc=25ْ C ID@Tc=100ْC IDM PD@TC=25ْC VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current ① ① ③ ② ① Max. 9.2 6.5 37 45 0.3 ±20 113 9.2 4.5 6.5 –55 to +175 300(1.6mm from case) 10 Ibf in(1.1N m) ● ● Units A W W/ْ C V mJ A mJ V/ns ْC Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque,6-32 or M3 screw Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-case Case-to-Sink,Flat,Greased Surface Junction-to-Ambient Min. — — — Typ. — 0.50 — Max. 3.31 — 62.5 ْC/W Units 1 SSFP10N10 StarMOST Power MOSFET Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD Drain-to-Source Breakdown Voltage Static Drain-to-Source On-resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage current Gate-to-Source Forward leakage Gate-to-Source Reverse leakage Total Gate Charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance △V(BR)DSS/△TJ Breakdown Voltage Temp.Coefficient Min. 100 — — 2.0 — — — — — — — — — — — — — Typ. — 0.12 — — 6.35 — — — — 16 2.7 7.8 9 30 18 20 5.0 Max. Units — — 0.2 4.0 — 10 100 100 -100 22 — — 13 63 70 59 — V Test Conditions VGS=0V,ID=250μA ④ V/ْC Reference to 25ْC,ID=1mA Ω VGS=10V,ID=4.6A V S μA nA VDS=5V,ID=250μA VDS=40V,ID=4.6A VDS=100V,VGS=0V VDS=80V,VGS=0V,TC=150ْC VGS=20V VGS=-20V ID=9.2A nC VDS=80V VGS=10V VDD=50V ID=9.2A nS RG=18Ω Between lead, 6mm(0.25in.) nH from package and center of die contact VGS=0V pF VDS=25V f=1.0MHZ LS Ciss Coss Crss Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — — 13 370 95 38 — 480 110 45 Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) ① Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-on Time . . Min. — — — — — Typ. — — — 98 0.34 Max. 9.2 A 37 1.5 — — V nS nC Units Test Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ=25ْC,IS=9.2A,VGS=0V ④ TJ=25ْC,IF=9.2A di/dt=100A/μs ④ Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: ① Repetitive rating;pulse width limited by max.junction temperature(see figure 11) ③ ISD≤9.2A,di/dt≤300A/μS,VDD≤V(BR)DSS, TJ=25ْ c ④ Pulse width=250μS; duty cycle≤2% ② L =2mH, IAS = 9.2 A, VDD = 25V, RG = 27Ω, Starting TJ = 25°C 2