SSFP20N50
StarMOST Power MOSFET
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Extremely high dv/dt capability Low Gate Charge Qg results in Simple Drive Requirement 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability
VDSS = 500V ID25 = 20A RDS(ON) = 0.25Ω
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Description
StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology.
Pin1–Gate Pin2–Drain Pin1–Source
Application
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Switching application
Absolute Maximum Ratings
Parameter ID@Tc=25ْ C ID@Tc=100ْC IDM PD@TC=25ْC VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current
① ① ③ ② ①
Max. 20 12 80 280 2.2 ±30 330 20 28 6.9 –55 to +150 300(1.6mm from case) 10 Ibf in(1.1N m)
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Units A W W/ْ C V mJ A mJ V/ns ْC
Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds Mounting Torque,6-32 or M3 screw
Thermal Resistance
Parameter RθJC RθCS RθJA Junction-to-case Case-to-Sink,Flat,Greased Surface Junction-to-Ambient Min. — — — Typ. — 0.50 — Max. 0.45 — 58 ْC/W Units
1
SSFP20N50
StarMOST Power MOSFET
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD Drain-to-Source Breakdown Voltage Static Drain-to-Source On-resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage current Gate-to-Source Forward leakage Gate-to-Source Reverse leakage Total Gate Charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance
△V(BR)DSS/△TJ Breakdown Voltage Temp.Coefficient
Min. 500 — — 3.0 11 — — — — — — — — — — — —
Typ. — 0.61 0.21 — — — — — — — — — 22 74 45 33 4.5
Max. Units — — 0.25 5.0 — 50 250 100 -100 110 33 54 — — — — — V
Test Conditions VGS=0V,ID=250μA
④
V/ْC Reference to 25ْC,ID=1mA Ω VGS=10V,ID=12A V S μA nA VDS=50V,ID=12A VDS=500V,VGS=0V VDS=400V,VGS=0V,TJ=150ْC VGS=30V VGS=-30V VDS=VGS,ID=250μA
ID=20A nC VDS=400V VGS=10V VDD=250V ID=20A nS RG=7.5Ω VGS =10V Between lead, 6mm(0.25in.) nH from package and center of die contact VGS=0V pF VDS=25V f=1.0MHZ
LS Ciss Coss Crss
Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
— — — —
7.5 2870 320 34.0
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Source-Drain Ratings and Characteristics
Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) ① Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-on Time . . Min. — — — — — Typ. — — — 520 5.3 Max. 20 A 80 1.5 780 8.0 V nS nC Units Test Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ=25ْC,IS=20A,VGS=0V ④ TJ=25ْC,IF=20A di/dt=100A/μs ④
Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)
Notes: ① Repetitive rating;pulse width limited by max.junction temperature
③ ISD≤20A,di/dt≤350A/μS,VDD≤V(BR)DSS, TJ≤25ْ C ④ Pulse width≤300μS; duty cycle≤2%
② L = 1.6mH, IAS = 20 A, RG = 25Ω,
Starting TJ = 25°C
2
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