SSFP4N90

SSFP4N90 StarMOST Power MOSFET ■ ■ Extremely high dv/dt capability Low Gate Charge Qg results in Simple Drive Requirement 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability VDSS = 900V ID25 = 4A RDS(ON) = 4.2Ω ■ ■ ■ ■ Description StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology. Pin1–Gate Pin2–Drain Pin1–Source Application ■ Switching application Absolute Maximum Ratings Parameter ID@Tc=25ْ C ID@Tc=100ْC IDM PD@TC=25ْC VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current ① ① ③ ② ① Max. 4 2.3 16 140 1.12 ±30 170 2.2 8.5 4.0 –55 to +150 300(1.6mm from case) 10 Ibf in(1.1N m) ● ● Units A W W/ْ C V mJ A mJ V/ns ْC Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque,6-32 or M3 screw Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-case Case-to-Sink,Flat,Greased Surface Junction-to-Ambient Min. — — — Typ. — 0.5 — Max. 0.89 － 62.5 ْC/W Units 1 SSFP4N90 StarMOST Power MOSFET Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD Drain-to-Source Breakdown Voltage Static Drain-to-Source On-resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage current Gate-to-Source Forward leakage Gate-to-Source Reverse leakage Total Gate Charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance △V(BR)DSS/△TJ Breakdown Voltage Temp.Coefficient Min. 900 — — 3.0 － — — — — — — — — — — — — Typ. — 1.05 3.5 — 2.0 — — — — 17 4.5 7.5 25 50 40 35 4.5 Max. Units — — 4.2 5.0 — 10 100 100 -100 22 － － 60 110 90 80 — V Test Conditions VGS=0V,ID=250μA ④ V/ْC Reference to 25ْC,ID=250μA Ω VGS=10V,ID=2A V S μA nA VDS=50V,ID=2A VDS=900V,VGS=0V VDS=720V,VGS=0V,TJ=125ْC VGS=30V VGS=-30V VDS=VGS,ID=250μA ID=4A nC VDS=720V VGS=10V See Fig.6 and 13④ VDD=450V ID=4A nS RG=25Ω Between lead, 6mm(0.25in.) nH from package and center of die contact VGS=0V pF VDS=25V f=1.0MHZ See Figure 5 LS Ciss Coss Crss Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — — 7.5 740 65 5.6 — 960 85 7.3 Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) ① Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-on Time . . Min. — — — — — Typ. — — — 450 3.5 Max. 4 A 16 1.4 － V nS nC Units Test Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ=25ْC,IS=4A,VGS=0V ④ TJ=25ْC,IS=4A di/dt=100A/μs ④ － Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: ① Repetitive rating;pulse width limited by max.junction temperature(see figure 11) ③ ISD≤4A,di/dt≤200A/μS,VDD≤V(BR)DSS, TJ≤25ْ C ④ Pulse width≤300μS; duty cycle≤2% ② L = 67mH, IAS = 4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 2