SSFP9N20

SSFP9N20 StarMOST Power MOSFET ■ ■ Extremely high dv/dt capability Low Gate Charge Qg results in Simple Drive Requirement 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability VDSS = 200V ID25 =9A RDS(ON) =0.4Ω ■ ■ ■ ■ Description StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology. Pin1–Gate Pin2–Drain Pin1–Source Application ■ Switching application Absolute Maximum Ratings Parameter ID@Tc=25ْ C ID@Tc=100ْC IDM PD@TC=25ْC VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current ① ① ③ ② ① Max. 9.0 5.7 36 74 0.59 ±20 250 9.0 7.4 5.0 –55 to +150 300(1.6mm from case) 10 Ibf in(1.1N m) ● ● Units A W W/ْ C V mJ A mJ V/ns ْC Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting Torque,6-32 or M3 screw Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-case Case-to-Sink,Flat,Greased Surface Junction-to-Ambient Min. — — — Typ. — 0.5 — Max. 1.7 — 62 ْC/W Units 1 SSFP9N20 StarMOST Power MOSFET Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD Drain-to-Source Breakdown Voltage Static Drain-to-Source On-resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage current Gate-to-Source Forward leakage Gate-to-Source Reverse leakage Total Gate Charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance △V(BR)DSS/△TJ Breakdown Voltage Temp.Coefficient Min. 200 — — 2.0 3.8 — — — — — — — — — — — — Typ. — 0.24 － — － — — — — Max. Units — — 0.4 4.0 — 25 250 100 -100 43 7.0 23 － － － － — V Test Conditions VGS=0V,ID=250μA V/ْC Reference to 25ْC,ID=1mA Ω VGS=10V,ID=5.4A V S μA nA VDS=VGS,ID=250μA VDS=50V,ID=5.4A VDS=200V,VGS=0V VDS=160V,VGS=0V,TJ=125ْC VGS=20V VGS=-20V － － － 9.4 28 39 20 4.5 ID=5.9A nC VDS=160V VGS=10V VDD=100V ID=5.9A nS RG=12Ω 4 RD=16Ω See Figure 10○ Between lead, 6mm(0.25in.) nH from package and center of die contact VGS=0V pF VDS=25V f=1.0MHZ See Figure 5 LS Ciss Coss Crss Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance － — — — 7.5 800 240 76 — — — — Source-Drain Ratings and Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) ① Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-on Time . . Min. — — — － － Typ. — — — 170 1.1 Max. 9.0 A 36 2.0 340 2.2 V nS nC Units Test Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ=25ْC,IS=9.0A,VGS=0V ④ TJ=25ْC,IF=59A di/dt=100A/μs ④ Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: ① Repetitive rating;pulse width limited by max.junction temperature(see figure 11) ③ ISD≤9.0A,di/dt≤120A/μS,VDD≤V(BR)DSS, TJ≤150ْ C ④ Pulse width≤300μS; duty cycle≤2% ② L =4.6mH, IAS = 9.0A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 2