SSFT04N15

SSFT04N15 150V N-Channel MOSFET Main Product Characteristics VDSS RDS(on) D 150V D 130mΩ (typ.) ID G G D 4A S S SOT-223 Features and Benefits Schematic Diagram  Advanced MOSFET process technology  Ideal for PWM, load switching and general purpose applications  Low on-resistance with low gate charge  Fast switching and reverse body recovery Description The SSFT04N15 utilizes the latest techniques to achieve high cell density, low on-resistance and high repetitive avalanche rating. These features make this device extremely efficient and reliable for use in PWM, load switching and a wide variety of other applications. Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Symbol Value Drain-Source Voltage VDS 150 Gate-Source Voltage VGS ±20 Continuous Drain Current ID 4 Pulsed Drain Current (note1) IDM 16 RθJA 125 TJ 150 TSTG -55 to +150 Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range Maximum Lead Temperure for Soldering TL Purposes (1/8” from case for 5 seconds) 1/7 260 Unit V A °C/W °C SSFT04N15 150V N-Channel MOSFET Electrical Characteristics (TA=25°C Parameter unless otherwise specified) Symbol Test Condition Min Typ Max 150 - - Unit Off Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID =250µA V Drain-Source Diode Forward Voltage VSD VGS = 0V, IS =2.0A - - 1.2 Zero Gate Voltage Drain Current IDSS VDS =150V, VGS =0V - - 1 µA Gate-Body Leakage Current IGSS VDS =0V, VGS =±20V - - ±100 nA Gate-Threshold Voltage VGS(th) VDS =VGS, ID =250µA 1.5 2.0 2.5 V Static Drain-Source On-Resistance RDS(on) = VGS =10V, ID 4.0A - 130 160 mΩ 5 - - S - 900 - - 115 - On Characteristics Forward Transconductance gfs VDS =15V, ID =4A Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 70 - Qg - 19 - Gate-Source Charge Qgs - 5.5 - Gate-Drain Charge Qgd - 7 - Turn-on Delay Time td(on) - 8 - Turn-on Rise Time tr VDS=75V, VGS=10V, - 10 - Turn-off Delay time td(off) RG=6Ω, ID =1.0A,RL=75Ω - 20 - - 15 - VDS =25V,VGS =0V,f =1MHz pF Switching Characteristics Total Gate Charge Turn-off Fall Time VDS =75V,VGS =10V,ID =1.5A tf Notes : 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2/7 nC ns SSFT04N15 150V N-Channel MOSFET Test Circuits and Waveforms Gate charge test circuit EAS Test Circuit Switching Time Test Circuit Switching Waveforms 3/7 SSFT04N15 150V N-Channel MOSFET Typical Electrical and Thermal Characteristics Output Characteristics 20 Transfer Characteristics 20 Ta=25°C VDS=10V VGS=4V,5V,6V Pulsed Pulsed 16 16 8 VGS=3.2V 4 VGS=3V 0 0 5 10 15 DRAIN TO SOURCE VOLTAGE VDS DRAIN CURRENT ID 12 DRAIN CURRENT ID (A) (A) VGS=3.5V 12 Ta=100°C 8 Ta=25°C 4 0 20 0 (V) 2 4 GATE TO SOURCE VOLTAGE 6 VGS (V) RDS(ON) —— VGS RDS(ON) —— ID 300 500 Pulsed Ta=25°C Pulsed 250 ID=4A (m) RDS(ON) 200 VGS=10V 150 ON-RESISTANCE ON-RESISTANCE RDS(ON) (m) 400 100 50 0 1 2 3 DRAIN CURRENT 4 ID 5 300 200 100 0 6 Ta=100°C Ta=25°C 2 4 6 GATE TO SOURCE VOLTAGE V GS (A) 4/7 8 (V) 10 SSFT04N15 150V N-Channel MOSFET Typical Electrical and Thermal Characteristics IS —— VSD Threshold Voltage 5 3.0 Pulsed 2.5 VTH THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 1 0.1 Ta=25°C Ta=100°C 0.01 1E-3 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.5 1.0 0.5 25 1.4 SOURCE TO DRAIN VOLTAGE V SD (V) ID=250uA 2.0 50 75 JUNCTION TEMPERATURE Case Temperature 5/7 100 Tj (°C ) 125 SSFT04N15 150V N-Channel MOSFET Package Outline Dimensions Symbol A A1 A2 b b1 c D E E1 e L θ Dimensions In Millimeters Min. Max. —— 1.800 0.020 0.100 1.500 1.700 0.660 0.840 2.900 3.100 0.230 0.350 6.300 6.700 6.700 7.300 3.300 3.700 2.300(BSC) 0.750 —— 0° 10° SOT-223 Dimensions In Inches Min. Max. —— 0.071 0.001 0.004 0.059 0.067 0.026 0.033 0.114 0.122 0.009 0.014 0.248 0.264 0.264 0.287 0.130 0.146 0.091(BSC) 0.030 —— 0° 10° Suggested Pad Layout 6/7 SSFT04N15 150V N-Channel MOSFET Order Information Device SSFT04N15 www.goodarksemi.com Package SOT-223 Marking Code T04N15 Carrier Tape & Reel 7/7 Quantity 2500/Reel HSF Status RoHS Compliant Doc.USSSFT04N15xSN2.1 Mar.2022