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GPDN4100

GPDN4100

  • 厂商:

    GPSEMI

  • 封装:

  • 描述:

    GPDN4100 - AVALANCHE RECTIFIER DIODE - Green Power Solutions srl

  • 数据手册
  • 价格&库存
GPDN4100 数据手册
Green Power Solutions srl Via Greto di Cornigliano 6R - 16152 Genova , Italy Phone: +39-010-659 1869 Fax: +39-010-659 1870 Web: www.gpsemi.it E-mail: info@gpsemi.it GPDN4100 AVALANCHE RECTIFIER DIODE VOLTAGE UP TO AVERAGE CURRENT SURGE CURRENT BLOCKING CHARACTERISTICS Characteristic VRRM VRSM IRRM PRSM Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current, max. Peak reverse power, max VRRM, single phase, half wave, Tjmax Tjmax, tp = 20µs 2900 - 3200 V 1000 A 9.5 kA Conditions Value 2900 - 3200 V V 50 mA 50 kW FORWARD CHARACTERISTICS IF(AV) IF(RMS) IFSM I²t VF(TO) Average forward current R.M.S. forward current Surge forward current I² t for fusing coordination Threshold voltage Forward slope resistance Peak forward voltage, max Tj = Tjmax Tj = Tjmax Forward current IF = 1200 A, Tj = Tjmax Sine wave,180° conduction, T h = 55° C Sine wave,180° conduction, Th = 55° C Non rep. half sine wave, 50 Hz, VR = 0 V, Tj = Tjmax 1000 A 1571 A 9.5 kA 451 kA²s 0.93 V 0.520 mΩ 1.55 V rF VFM SWITCHING CHARACTERISTICS Qrr Irr Rverse recovery charge, typ Reverse recovery current Tj = Tjmax, IF = 1000 A, di/dt = -5 A/µs µC A THERMAL AND MECHANICAL CHARACTERISTICS Rth(j-c) Rth(c-h) Tjmax Tstg F Thermal resistance (junction to case) Thermal resistance (case to heatsink) Max operating junction temperature Storage temperature Clamping force ± 10% Mass Double side cooled Double side cooled 0.040 ° C/W 0.007 ° C/W 160 ° C -40 / 160 ° C 11 kN 300 g Document GPDN4100T001
GPDN4100 价格&库存

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