G2S06550B

Datasheet V2016.1.0 G2S06550B 650V/50A Silicon Carbide Power Schottky Barrier Diode Features • Rated to 650V at 50 Amps • Zero reverse recovery current • Zero forward recovery voltage • Temperature independent switching behaviour • High temperature operation • High frequency operation Key Characteristics VRRM 650 V IF, Tc≤135℃ 50 A QC 170 nC Benefits • Unipolar rectifier • Substantially reduced switching losses • No thermal run-away with parallel devices • Reduced heat sink requirements Applications PKG: TO-247 • SMPS, e.g., CCM PFC; • Motor drives, Solar application, UPS, Wind turbine, Rail traction, EV/HEV Part No. Package Type Marking G3S06550B TO-247-2/3 pin G3S06550B G2S06550B ©2016 Global Power Technology Company Ltd - ALL RIGHTS RESERVED G2S06550B 650V/50A Silicon Carbide Power Schottky Barrier Diode Maximum Ratings Parameter Symbol Test Condition Value Unit Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Repetitive Peak Forward Surge Current Non-repetitive Peak Forward Surge Current VRRM 650 VRSM 650 VDC 650 80.7 50 TBD A TBD A Power Dissipation PTOT W W Operating Junction Tj 211.3 91.5 -55℃ to 175℃ Storage Temperature IF IFRM IFSM TC=25℃ TC=108℃ TC=25℃, tp=10ms ， Half Sine Wave，D=0.3 TC=25℃, tp=10ms ， Half Sine Wave TC=25℃ TC=110℃ A -55℃ to 175℃ Tstg M3 Screw 6-32 Screw Mounting Torque V 1 8.8 ℃ ℃ Nm lbf-in Thermal Characteristics Parameter Symbol Thermal resistance from junction to case Rth JC G2S06550B Value Typ. Unit 0.71 Test Condition ℃/W ©2016 Global Power Technology Company Ltd - ALL RIGHTS RESERVED G2S06550B 650V/50A Silicon Carbide Power Schottky Barrier Diode Electrical Characteristics Parameter Symbol Forward Voltage VF Reverse Current IR Numerical Typ. Max. 1.62 1.8 1.92 2.1 50 100 100 200 Test Conditions IF=50A, Tj=25℃ IF=50A, Tj=175℃ VR=650V, Tj=25℃ VR=650V, Tj=175℃ Unit V µA VR=400V, Tj=150℃ QC 170 - VR=0V, Tj=25℃, f=1MH= Total Capacitive Charge 3800 4300 VR=200V, Tj=25℃, f=1MH= VR=400V, Tj=25℃, f=1MH= 314 308 320 312 VR Qc = ∫ 0 C Total Capacitance C (V )dV nC pF Performance Graphs 1) Forward IV characteristics as a function of Tj : 2) Reverse IV characteristics as a function of Tj : 70 0.05 0.045 60 0.04 Tj=25℃ Tj=75℃ 50 0.035 Tj=125℃ Tj=175℃ 0.03 IF ( A ) IR( mA ) 40 30 Tj=25℃ Tj=75℃ 0.025 Tj=125℃ Tj=175℃ 0.02 0.015 20 0.01 10 0.005 0 0 0 0.5 1 1.5 V F (V) G2S06550B 2 2.5 0 100 200 300 400 500 600 700 800 V R (V) ©2016 Global Power Technology Company Ltd - ALL RIGHTS RESERVED G2S06550B 650V/50A Silicon Carbide Power Schottky Barrier Diode 3) Current Derating 4)Capacitance vs. reverse voltage : 350 4000 300 3500 10% D ut y 30% D ut y 50% D ut y 3000 70% D ut y DC 2500 200 C( p F ) IF(p ea k）(A ) 250 150 2000 1500 100 1000 50 500 0 0 25 50 75 100 125 150 0.01 175 0.1 1 10 100 1000 V R (V) TC℃ Package TO-247 DIM A1 B1 C1 D E F G H I J K L M N O P G2S06550B Millimeters Min. Max. 15.45 15.75 20.3 20.6 24.8 25.1 6 1.8 2.2 2.8 3.2 5.45 41.08 41.12 1 1.4 0.5 0.7 2.2 2.6 3.5 2.1 2.3 4.85 5.15 0 0.3 3.6 Inches Min. 0.608 0.799 0.976 Max. 0.620 0.811 0.988 0.236 0.071 0.110 0.087 0.126 0.215 1.617 0.039 0.020 0.087 1.619 0.055 0.028 0.102 0.138 0.083 0.191 0.000 0.091 0.203 0.012 0.142 ©2016 Global Power Technology Company Ltd - ALL RIGHTS RESERVED G2S06550B 650V/50A Silicon Carbide Power Schottky Barrier Diode Note: The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC(RoHS2). RoHS Certification and other certifications can be obtained from GPT sales representatives or GPT website: http://globalpowertech.cn/English/index.asp More product datasheets and company information can be found in: http://globalpowertech.cn/English/index.asp G2S06550B ©2016 Global Power Technology Company Ltd - ALL RIGHTS RESERVED