G2S06560B

Datasheet V2016.1.0 G2S06560B 650V/60A Silicon Carbide Power Schottky Barrier Diode Features • Rated to 650V at 60 Amps • Zero reverse recovery current • Zero forward recovery voltage • Temperature independent switching behaviour • High temperature operation • High frequency operation Key Characteristics VRRM 600 IF, Tc≤135℃ QC V 32 (per leg) 192 A nC Benefits • Unipolar rectifier • Substantially reduced switching losses • No thermal run-away with parallel devices • Reduced heat sink requirements Applications PKG: TO-247 • SMPS, e.g., CCM PFC; • Motor drives, Solar application, UPS, Wind turbine, Rail traction, EV/HEV Part No. Package Type Marking G3S06560B TO-247-3 pin G3S06560B G2S06560B ©2016 Global Power Technology Company Ltd - ALL RIGHTS RESERVED G2S06560B 650V/60A Silicon Carbide Power Schottky Barrier Diode Maximum Ratings Parameter Repetitive Peak Reverse Voltage Surge Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Repetitive Peak Forward Surge Current Non-repetitive Peak Forward Surge Current Symbol Test Condition Value VRRM 650 VRSM 650 VDC 650 67.7* 32* 30* 150* A 210* A 192.3* 83* 135 W W IF IFRM IFSM Power Dissipation PTOT Operating Junction Storage Temperature TC=25℃ TC=135℃ TC=138℃ TC=25℃, tp=10ms ， Half Sine Wave，D=0.3 TC=25℃, tp=10ms ， Half Sine Wave TC=25℃ TC=110℃ TC Tj V A ℃ -55℃ to 175℃ -55℃ to 175℃ Tstg Mounting Torque Unit M3 Screw 6-32 Screw ℃ Nm lbf-in 1 8.8 *Per leg ; ** Per diode Thermal Characteristics Parameter Symbol Thermal resistance from junction to case Rth JC Test Condition Value Typ. 0.78* 0.39** Unit ℃/W * Per leg ; ** Per diode G2S06560B ©2016 Global Power Technology Company Ltd - ALL RIGHTS RESERVED G2S06560B 650V/60A Silicon Carbide Power Schottky Barrier Diode Electrical Characteristics Parameter Symbol Forward Voltage VF Reverse Current IR Total Capacitive Charge QC Numerical Typ. Max. 1.55 1.8 1.77 2.5 15 100 30 200 Test Conditions IF=30A, Tj=25℃ IF=30A, Tj=175℃ VR=650V, Tj=25℃ VR=650V, Tj=175℃ VR=650V, Tj=25℃ C 2380 212 207 µA 2490 VR=200V, Tj=25℃, f=1MHZ VR=400V, Tj=25℃, f=1MHZ V - VR=0V, Tj=25℃, f=1MHZ Total Capacitance 96 Unit 217 211 nC pF * Per leg Performance Graphs Per leg: 1) Forward IV characteristics as a function of Tj : 2) Reverse IV characteristics as a function of Tj : 40.0 0.14 35.0 0.12 Tj=25℃ Tj=75℃ Tj=125℃ 30.0 Tj=175℃ 0.1 IR ( m A ) IF ( A ) 25.0 20.0 0.08 T j =2 5 ℃ T j =7 5 ℃ T j =1 2 5 ℃ T j =1 7 5 ℃ 0.06 15.0 0.04 10.0 0.02 5.0 0.0 0 0 0.2 0.4 0.6 0.8 1 V F (V) G2S06560B 1.2 1.4 1.6 1.8 2 0 100 200 300 400 500 600 700 800 V R (V) ©2016 Global Power Technology Company Ltd - ALL RIGHTS RESERVED G2S06560B 650V/60A Silicon Carbide Power Schottky Barrier Diode 3) Current Derating 4)Capacitance vs. reverse voltage : 250 2500 225 10% Duty 2250 30% Duty 200 50% Duty 2000 70% Duty DC 175 150 1500 C( p F ) IF ( p e a k ）( A ) 1750 125 100 1250 1000 75 750 50 500 25 250 0 0 25 50 75 100 125 150 175 0.01 0.1 1 TC℃ 10 100 1000 V R (V) Package TO-247 DIM A1 B1 C1 D E F G H I J K L M N O P G2S06560B Millimeters Min. Max. 15.45 15.75 20.3 20.6 24.8 25.1 6 1.8 2.2 2.8 3.2 5.45 41.08 41.12 1 1.4 0.5 0.7 2.2 2.6 3.5 2.1 2.3 4.85 5.15 0 0.3 3.6 Inches Min. 0.608 0.799 0.976 Max. 0.620 0.811 0.988 0.236 0.071 0.110 0.087 0.126 0.215 1.617 0.039 0.020 0.087 1.619 0.055 0.028 0.102 0.138 0.083 0.191 0.000 0.091 0.203 0.012 0.142 ©2016 Global Power Technology Company Ltd - ALL RIGHTS RESERVED G2S06560B 650V/60A Silicon Carbide Power Schottky Barrier Diode Note: The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC(RoHS2). RoHS Certification and other certifications can be obtained from GPT sales representatives or GPT website: http://globalpowertech.cn/English/index.asp More product datasheets and company information can be found in: http://globalpowertech.cn/English/index.asp G2S06560B ©2016 Global Power Technology Company Ltd - ALL RIGHTS RESERVED