GFC014

Gunter Semiconductor GmbH Gunter N Channel Power MOSFET with low RDS(on) GFC014 Chip Specification General Description: * Advanced Process Technology * Dynamic dV/dt Rating * 175℃ Operating Temperature * Fast Switching * Fully Avalanche Rated * Low RDS(on) Mechanical Data: D2 Dimension 1.92mm x 2.18mm Thickness: 400 µm Metallization: Top : : Al Backside : CrNiAg / Au Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn Source Bonding Wire: 5 mil Al Absolute Maximum Rating Characteristics Drain-to-Source Breakdown Voltage Static Drain-to - Source On-resistance Continuous Drain current ( in target package) Continuous Drain current ( in target package) Operation Junction Storage Temperature @Ta=25℃ Symbol V(BR)DSS RDS(ON) ID@25℃ ID@100℃ Tj Limit Unit Test Conditions VGS=0V, ID=250µΑ VGS=10V, ID=6Α VGS=10V VGS=10V 60 0.2 10 7.2 -55~175 -55~175 V Ω A A ℃ ℃ TSTR Target Device: IRFZ14 TO-220AB PD 43 W @Tc=25℃