Gunter Gunter Semiconductor GmbH
N Channel Power MOSFET
GFC024
Chip Specification
General Description: * Advanced Process Technology * Dynamic dV/dt Rating
* 175℃ Operating Temperature * Fast Switching * Fully Avalanche Rated
Mechanical Data: D6 Dimension 2.59mm x 3.20mm 400 µm Thickness: Metallization: Al Top : : CrNiAg / Au Backside : Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn Source Bonding Wire: 10 mil Al Absolute Maximum Rating
Characteristics
Drain-to-Source Breakdown Voltage Static Drain-to - Source On-resistance Continuous Drain current ( in target package) Continuous Drain current ( in target package) Operation Junction Storage Temperature @Ta=25℃
Symbol V(BR)DSS RDS(ON) ID@25℃ ID@100℃ Tj
Limit
Unit
Test Conditions VGS=0V, ID=250µΑ VGS=10V, ID=10Α VGS=10V VGS=10V
60 0.1 17 12 -55~175 -55~175
V Ω A A ℃ ℃
TSTR
Target Device: IRFZ24 TO-220AB
PD
45
W
@Tc=25℃
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