Gunter Gunter Semiconductor GmbH
Chip Specification
General Description: * Advanced Process Technology * Dynamic dV/dt Rating
* 175℃ Operating Temperature * Fast Switching * Fully Avalanche Rated * Extremely low Rds(on) Mechanical Data: D24 4.32mm x 6.10mm Dimension 400 µm Thickness: Metallization: Al Top : : CrNiAg / Au Backside : Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn 20 mil Al Source Bonding Wire: Absolute Maximum Rating
Characteristics Drain-to-Source Breakdown Voltage Static Drain-to - Source On-resistance Continuous Drain current ( in target package) Continuous Drain current ( in target package) Operation Junction Storage Temperature
@Ta=25℃
GFC048
N Channel Power MOSFET with extremely low RDS(on)
Symbol V(BR)DSS RDS(ON) ID@25℃ ID@100℃ Tj
Limit
Unit
Test Conditions
VGS=0V, ID=250µΑ VGS=10V, ID=32Α VGS=10V VGS=10V
60 0.018 53 37 -55~175 -55~175
V Ω A A ℃ ℃
TSTR
Target Device: IRFZ48 TO-263AB
Pd Pd
3.8 94
W W
@Ta=25℃ @Tc=25℃
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