GFC110

Gunter Gunter Semiconductor GmbH N Channel Power MOSFET with low RDS(on) GFC110 Chip Specification General Description: * Advanced Process Technology * Dynamic dV/dt Rating * 175℃ Operating Temperature * Fast Switching * Fully Avalanche Rated * Low RDS(on) Mechanical Data: D3 1.61mm x 2.21mm Dimension 400 µm Thickness: Metallization: Al Top : : CrNiAg / Au Backside : Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn Source Bonding Wire: 5 mil Al Absolute Maximum Rating Characteristics Drain-to-Source Breakdown Voltage Static Drain-to - Source On-resistance Continuous Drain current ( in target package) Continuous Drain current ( in target package) Operation Junction Storage Temperature @Ta=25℃ Symbol V(BR)DSS RDS(ON) ID@25℃ ID@100℃ Tj Limit Unit Test Conditions VGS=0V, ID=250µΑ VGS=10V, ID=3.4Α VGS=10V VGS=10V 100 0.54 5.6 4 -55~175 -55~175 V Ω A A ℃ ℃ TSTR Target Device: IRF510 TO-220AB PD 43 W @Tc=25℃