GFC210

Gunter Gunter Semiconductor GmbH N Channel Power MOSFET GFC210 Chip Specification General Description: * Advanced Process Technology * Dynamic dV/dt Rating * 150℃ Operating Temperature * Fast Switching * Fully Avalanche Rated Mechanical Data: D4 1.7mm x 2.21mm Dimension 400 µm Thickness: Metallization: Al Top : : CrNiAg / Au Backside : Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn Source Bonding Wire: 5 mil Al Absolute Maximum Rating Characteristics Drain-to-Source Breakdown Voltage Static Drain-to - Source On-resistance Continuous Drain current ( in target package) Continuous Drain current ( in target package) Operation Junction Storage Temperature @Ta=25℃ Symbol V(BR)DSS RDS(ON) ID@25℃ ID@100℃ Tj Limit Unit Test Conditions VGS=0V, ID=250µΑ VGS=10V, ID=1.65A VGS=10V VGS=10V 200 1.5 3.3 2.1 -55~150 -55~150 V Ω A A ℃ ℃ TSTR Target Device: IRF610 TO-220AB PD 38 W @Tc=25℃