GFC260

Gunter Gunter Semiconductor GmbH Chip Specification General Description: * Advanced Process Technology * Dynamic dV/dt Rating * 150℃ Operating Temperature * Fast Switching * Fully Avalanche Rated * Extremely low RDS(ON) Mechanical Data: D31 6.53mm x 9.15mm Dimension 400 µm Thickness: Metallization: Al Top : : CrNiAg / Au Backside : Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn 25 mil Al Source Bonding Wire: Absolute Maximum Rating Characteristics Drain-to-Source Breakdown Voltage Static Drain-to - Source On-resistance Continuous Drain current ( in target package) Continuous Drain current ( in target package) Operation Junction Storage Temperature @Ta=25℃ GFC260 N Channel Power MOSFET with extremely low RDS(ON) Symbol V(BR)DSS RDS(ON) ID@25℃ ID@100℃ Tj Limit Unit Test Conditions VGS=0V, ID=250µΑ VGS=10V, ID=28Α VGS=10V VGS=10V 200 0.055 46 29 -55~150 -55~150 V Ω A A ℃ ℃ TSTR Target Device: IRFP260 TO-247AC PD 280 W @Tc=25℃