Gunter Gunter Semiconductor GmbH
N Channel Power MOSFET
GFC330
Chip Specification
General Description: * Advanced Process Technology * Dynamic dV/dt Rating
* 150℃ Operating Temperature * Fast Switching * Fully Avalanche Rated
Mechanical Data: D15 2.92mm x 4.55mm Dimension 400 µm Thickness: Metallization: Al Top : : CrNiAg / Au Backside : Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn 8 mil Al Source Bonding Wire: Absolute Maximum Rating
Characteristics
Drain-to-Source Breakdown Voltage Static Drain-to - Source On-resistance Continuous Drain current ( in target package) Continuous Drain current ( in target package) Operation Junction Storage Temperature @Ta=25℃
Symbol V(BR)DSS RDS(ON) ID@25℃ ID@100℃ Tj
Limit
Unit
Test Conditions VGS=0V, ID=250µΑ VGS=10V, ID=2.75A VGS=10V VGS=10V
400 1 5.5 3.5 -55~150 -55~150
V Ω A A ℃ ℃
TSTR
Target Device: IRF730 TO-220AB
PD
73
W
@Tc=25℃
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