Gunter Gunter Semiconductor GmbH
N Channel Power MOSFET with low RDS(on)
GFC440
Chip Specification
General Description: * Advanced Process Technology * Dynamic dV/dt Rating
* 150℃ Operating Temperature * Fast Switching * Fully Avalanche Rated * Low RDS(on) Mechanical Data: D22 Dimension 4.32mm x 5.76mm 400 µm Thickness: Metallization: Al Top : : CrNiAg / Au Backside : Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn Source Bonding Wire: 12 mil Al Absolute Maximum Rating
Characteristics
Drain-to-Source Breakdown Voltage Static Drain-to - Source On-resistance Continuous Drain current ( in target package) Continuous Drain current ( in target package) Operation Junction Storage Temperature @Ta=25℃
Symbol V(BR)DSS RDS(ON) ID@25℃ ID@100℃ Tj
Limit
Unit
Test Conditions VGS=0V, ID=250µΑ VGS=10V, ID=4Α VGS=10V VGS=10V
500 0.85 8 5.1 -55~150 -55~150
V Ω A A ℃ ℃
TSTR
Target Device: IRF840 TO-220AB
PD
134
W
@Tc=25℃
很抱歉,暂时无法提供与“GFC440”相匹配的价格&库存,您可以联系我们找货
免费人工找货