GFC9034

Gunter Semiconductor GmbH Gunter P Channel Power MOSFET GFC9034 Chip Specification General Description: * Advanced Process Technology * Dynamic dV/dt Rating * 175℃ Operating Temperature * Fast Switching * Fully Avalanche Rated Mechanical Data: D38 Dimension 3.64mm x 3.86mm Thickness: 400 µm Metallization: Top : : Al Backside : CrNiAg / Au Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn Source Bonding Wire: 12 mil Al Absolute Maximum Rating Characteristics Drain-to-Source Breakdown Voltage Static Drain-to - Source On-resistance Continuous Drain current ( in target package) Continuous Drain current ( in target package) Operation Junction Temperatre Storage Temperature @Ta=25℃ Symbol -V(BR)DSS RDS(ON) --ID@25℃ --ID@100℃ Tj Limit Unit Test Conditions − VGS=0V, -ID=250µΑ − VGS=10V, - ID=11Α - VGS=10V - VGS=10V 60 0.14 18 13 -55~175 -55~175 V Ω A A ℃ ℃ TSTR Target Device: IRF9Z34 TO-220AB PD 88 W @Tc=25℃