GFC9120

Gunter Gunter Semiconductor GmbH P Channel Power MOSFET GFC9120 Chip Specification General Description: * Advanced Process Technology * Dynamic dV/dt Rating * 175℃ Operating Temperature * Fast Switching * Fully Avalanche Rated Mechanical Data: D36 2.41mm x 2.90mm Dimension 400 µm Thickness: Metallization: Al Top : : CrNiAg / Au Backside : Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn 8 mil Al Source Bonding Wire: Absolute Maximum Rating Characteristics Drain-to-Source Breakdown Voltage Static Drain-to - Source On-resistance Continuous Drain current ( in target package) Continuous Drain current ( in target package) Operation Junction Temperatre Storage Temperature @Ta=25℃ Symbol -V(BR)DSS RDS(ON) --ID@25℃ --ID@100℃ Tj Limit Unit Test Conditions − VGS=0V, -ID=250µΑ − VGS=10V, - ID=4.1Α - VGS=10V - VGS=10V 100 0.6 6.8 4.8 -55~175 -55~175 V Ω A A ℃ ℃ TSTR Target Device: IRF9520 TO-220AB PD 60 W @Tc=25℃