GFC9230

Gunter Gunter Semiconductor GmbH P Channel Power MOSFET GFC9230 Chip Specification General Description: * Advanced Process Technology * Dynamic dV/dt Rating * 150℃ Operating Temperature * Fast Switching * Fully Avalanche Rated Mechanical Data: D40 2.95mm x 4.60mm Dimension 400 µm Thickness: Metallization: Al Top : : CrNiAg / Au Backside : Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn 8 mil Al Source Bonding Wire: Absolute Maximum Rating Characteristics Drain-to-Source Breakdown Voltage Static Drain-to - Source On-resistance Continuous Drain current ( in target package) Continuous Drain current ( in target package) Operation Junction Temperatre Storage Temperature @Ta=25℃ Symbol -V(BR)DSS RDS(ON) --ID@25℃ --ID@100℃ Tj Limit Unit Test Conditions − VGS=0V, -ID=250µΑ − VGS=10V, - ID=3.3Α - VGS=10V - VGS=10V 200 0.8 6.5 4 -55~150 -55~150 V Ω A A ℃ ℃ TSTR Target Device: IRF9630 TO-220AB PD 70 W @Tc=25℃