GFCE40

Gunter Gunter Semiconductor GmbH Chip Specification General Description: * Advanced Process Technology * Dynamic dV/dt Rating * 175℃ Operating Temperature * Fast Switching * Fully Avalanche Rated * High breakdown voltage Mechanical Data: D23 Dimension 5.64mm x 5.64mm 480 µm Thickness: Metallization: Al Top : : CrNiAg / Au Backside : Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn Source Bonding Wire: 10 mil Al Absolute Maximum Rating Characteristics Drain-to-Source Breakdown Voltage Static Drain-to - Source On-resistance Continuous Drain current ( in target package) Continuous Drain current ( in target package) Operation Junction Storage Temperature @Ta=25℃ GFCE40 N Channel Power MOSFET , with high breakdown voltage Symbol V(BR)DSS RDS(ON) ID@25℃ ID@100℃ Tj TSTR Limit Unit Test Conditions VGS=0V, ID=250µΑ VGS=10V, ID=3.2Α VGS=10V VGS=10V 800 2 5.4 3.4 -55~175 -55~175 V Ω A A ℃ ℃ Target Device: IRFPE40 TO-247AC PD 150 W @Tc=25℃