GFCG40

Gunter Gunter Semiconductor GmbH N Channel High voltage, Power MOSFET GFCG40 Chip Specification General Description: * Advanced Process Technology * Dynamic dV/dt Rating * 150℃ Operating Temperature * Fast Switching * Fully Avalanche Rated * High breakdown voltage Mechanical Data: D23 Dimension 5.64mm x 5.64mm 480 µm Thickness: Metallization: Al Top : : CrNiAg / Au Backside : Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn 10 mil Al Source Bonding Wire: Absolute Maximum Rating Characteristics Drain-to-Source Breakdown Voltage Static Drain-to - Source On-resistance Continuous Drain current ( in target packag Continuous Drain current ( in target packag Operation Junction Storage Temperature @Ta=25℃ Symbol V(BR)DSS RDS(ON) ID@25℃ ID@100℃ Tj Limit Unit Test Conditions VGS=0V, ID=250µΑ VGS=10V, ID=2.6Α VGS=10V VGS=10V 1000 3.5 4.3 2.7 V Ω A A -55~150 ℃ -55~150 ℃ TSTR Target Device: IRFG40 TO-247AC Pd 150 W @Tc=25℃