Gunter Semiconductor GmbH Gunter
N Channel Power MOSFET FOR LOGIC DRIVER
GLC024
Chip Specification
General Description: * Advanced Process Technology * Dynamic dv/dt Rating
* 175℃ Operating Temperature * Fast Switching * Fully Avalanche Rated * RDS(ON) rated at VGS = 5V * Ease of parallel Mechanical Data: D6 Dimension 2.59mm x3.20mm Thickness: 400 µm Metallization: Top : : Al Backside : CrNiAg / Au Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn Source Bonding Wire: 10 mil Al Absolute Maximum Rating
Characteristics
Drain-to-Source Breakdown Voltage Static Drain-to - Source On-resistance Continuous Drain current ( in target package) Continuous Drain current ( in target package) Operation Junction Temperature Storage Temperature @Ta=25℃
Symbol V(BR)DSS RDS(ON) ID@25℃ ID@100℃ Tj
Limit
Unit
Test Conditions VGS=0V, ID=250µΑ VGS=5V, ID=10Α VGS= 5V VGS= 5V
60 0.1 17 12 -55~175 -55~175
V Ω A A ℃ ℃
TSTR
Target Device: IRLZ24 TO-220AB
PD
60
W
@Tc=25℃
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