GLC034

Gunter Gunter Semiconductor GmbH N Channel Power MOSFET FOR LOGIC DRIVER GLC034 Chip Specification General Description: * Advanced Process Technology * Dynamic dv/dt Rating * 175℃ Operating Temperature * Fast Switching * Fully Avalanche Rated * RDS(ON) rated at VGS = 5V * Ease of parallel Mechanical Data: D12 3.64mm x 3.86mm Dimension 400 µm Thickness: Metallization: Al Top : : CrNiAg / Au Backside : Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn 15 mil Al Source Bonding Wire: Absolute Maximum Rating Characteristics Drain-to-Source Breakdown Voltage Static Drain-to - Source On-resistance Continuous Drain current ( in target package) Continuous Drain current ( in target package) Operation Junction Temperature Storage Temperature @Ta=25℃ Symbol V(BR)DSS RDS(ON) ID@25℃ ID@100℃ Tj Limit Unit Test Conditions VGS=0V, ID=250µΑ VGS=5V, ID=18Α VGS= 5V VGS= 5V 60 0.055 30 21 -55~175 -55~175 V Ω A A ℃ ℃ TSTR Target Device: IRLZ34 TO-220AB PD 88 W @Tc=25℃