Gunter Gunter Semiconductor GmbH
N Channel Power MOSFET FOR LOGIC DRIVER
GLC110
Chip Specification
General Description: * Advanced Process Technology * Dynamic dv/dt Rating
* 175℃ Operating Temperature * Fast Switching * Fully Avalanche Rated * RDS(ON) rated at VGS = 5V * Ease of parallel Mechanical Data: D3 1.61mm x 2.21mm Dimension 400 µm Thickness: Metallization: Al Top : : CrNiAg / Au Backside : Suggested Bonding Conditions: Die Mounting: Solder Perform 95/5 PbSn or 92.5./2.5/5 PbAgIn Source Bonding Wire: 5 mil Al Absolute Maximum Rating
Characteristics
Drain-to-Source Breakdown Voltage Static Drain-to - Source On-resistance Continuous Drain current ( in target package) Continuous Drain current ( in target package) Operation Junction Temperature Storage Temperature @Ta=25℃
Symbol V(BR)DSS RDS(ON) ID@25℃ ID@100℃ Tj
Limit
Unit
Test Conditions VGS=0V, ID=250µΑ VGS=5V, ID=3.45Α VGS= 5V VGS= 5V
100 0.54 5.6 4 -55~175 -55~175
V Ω A A ℃ ℃
TSTR
Target Device: IRL510 TO-220AB
PD
43
W
@Tc=25℃
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