MBR1045

MBR 1045 Chips for Schottky Diodes Chip Specification General Description: Schottky Diode chips with Mo-barrier for switch mode power rectifiers with the following features: * Guard-ring for stress protection * Extremely low forward voltage * 125 ℃ operation junction temperature * reverse avalanche behavior Mechanical Data: MBR1045 passivated Silicon Chip Demension(mil) 105x105 Thickness: 350 +- 20 µm Metallization: Top ( Anode ) : Al Ag Bottom ( Cathode) : TiNiAg Forward Current(A) 10A Reverse Voltage (V): >45 V Type MBR1045 Chip size(mil) VF(V)@25 C at If=10A VF(V)@125 C at If=10A IRM@VRMM at 25 C 105x105 620mV 540mV 0,6mA * expected value for recommended assembling with both side soldering Typical devise MBR1045 Note: Other voltages & Top Metal AL are available