SB3100-1.8

SB 3XX -1.8 Chips for Schottky Diodes Chip Specification General Description: Schottky Diode chips with Mo-barrier for switch mode power rectifiers with the following features: * Guard-ring for stress protection * Extremely low forward voltage * 125 ℃ operation junction temperature * reverse avalanche behavior Mechanical Data: SB 3XX passivated Silicon Chip Demension(mm) 1,8x1,8 Thickness: 350 +- 20 µm Metallization: Top ( Anode ) : Al Ag Bottom ( Cathode) : TiNiAg Forward Current(A) 3A Reverse Voltage (V):23, 43, 100 V Type SB320 SB340 SB3100 Chip size(mm) VR(V) VF(V)@25 C at If=1A IRM@VRMM at 25 C 1,8x1,8 1,8x1,8 1,8x1,8 23 V 43 V 100 V 440mV 600mV 690mV 0,5mA 0,5mA 0,5mA Note: Other voltages, Vf & Top Metal AL are available