GS820H32T-4I

GS820H32T/Q-150/138/133/117/100/66 TQFP, QFP Commercial Temp Industrial Temp Features • FT pin for user configurable flow through or pipelined operation. • Single Cycle Deselect (SCD) Operation. • High Output Drive current. • 3.3V +10%/-5% Core power supply • 2.5V or 3.3V I/O supply. • LBO pin for linear or interleaved burst mode. • Internal input resistors on mode pins allow floating mode pins. • Default to Interleaved Pipelined Mode. • Byte write (BW) and/or global write (GW) operation. • Common data inputs and data outputs. • Clock Control, registered, address, data, and control. • Internal Self-Timed Write cycle. • Automatic power-down for portable applications. • JEDEC standard 100-lead TQFP or QFP package. -150 Pipeline tCycle 6.6ns 3-1-1-1 tKQ 3.8ns IDD 270mA Flow tCycle 10.5ns Through tKQ 9ns 2-1-1-1 IDD 170mA -138 -133 -117 -100 -66 7.25ns 7.5ns 8.5ns 10ns 12.5ns 4ns 4ns 4.5 5ns 6ns 245mA 240mA 210mA 180mA 150mA 15ns 15ns 15ns 15ns 20ns 9.7ns 10ns 11ns 12ns 18ns 120mA 120mA 120mA 120mA 95mA 64K x 32 2M Synchronous Burst SRAM Flow Through / Pipeline Reads 150Mhz - 66Mhz 9ns - 18ns 3.3V VDD 3.3V & 2.5V I/O The function of the Data Output register can be controlled by the user via the FT mode pin/bump (Pin 14 in the TQFP, bump 1F in the FPBGA). Holding the FT mode pin/bump low, places the RAM in Flow through mode, causing output data to bypass the Data Output Register. Holding FT high places the RAM in Pipelined Mode, activating the rising edge triggered Data Output Register. Pipelined Reads The GS820H32 is an SCD (Single Cycle Deselect) pipelined synchronous SRAM. DCD (Dual Cycle Deselect) versions are also available. SCD SRAMs pipeline deselect commands one stage less than read commands. SCD RAMs begin turning off their outputs immediately after the deselect command has been captured in the input registers. Byte Write and Global Write Byte write operation is performed by using byte write enable (BW) input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for writing all bytes at one time, regardless of the Byte Write control inputs. Sleep Mode Low power (Sleep mode) is attained through the assertion (High) of the ZZ signal, or by stopping the clock (CK). Memory data is retained during Sleep mode. Functional Description Applications The GS820H32 is a 2,097,152 bit high performance synchronous SRAM with a 2 bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPU’s, the device now finds application in synchronous SRAM applications ranging from DSP main store to networking chip set support. Core and Interface Voltages The GS820H32 operates on a 3.3V power supply and all inputs/ outputs are 3.3V and 2.5V compatible. Separate output power (VDDQ) pins are used to de-couple output noise from the internal circuit. Controls Addresses, data I/O’s, chip enables (E1, E2, E3), address burst control inputs (ADSP, ADSC, ADV ) and write control inputs (Bx, BW, GW) are synchronous and are controlled by a positive edge triggered clock input (CK). Output enable (G) and power down control (ZZ) are asynchronous inputs. Burst cycles can be initiated with either ADSP or ADSC inputs. In Burst mode, subsequent burst addresses are generated internally and are controlled by ADV. The burst address counter may be configured to count in either linear or interleave order with the Linear Burst Order (LBO) input. The Burst function need not be used. New addresses can be loaded on every cycle with no degradation of chip performance. Rev: 1.03 2/2000 1/23 © 1999, Giga Semiconductor, Inc. D Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS820H32T/Q-150/138/133/117/100/66 GS820H32 100 Pin TQFP and QFP Pinout NC DQ C8 DQ C7 VDDQ VSS DQ C6 DQ C5 DQ C4 DQ C3 VSS VDDQ DQ C2 DQ C1 FT VDD NC VSS DQ D1 DQ D2 VDDQ VSS DQ D3 DQ D4 DQ D5 DQ D6 VSS VDDQ DQ D7 DQ D8 NC 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 80 2 79 3 78 4 77 5 76 6 75 7 74 8 73 9 72 64K x 32 10 71 Top View 11 70 12 69 13 68 14 67 15 66 16 65 17 64 18 63 19 62 20 61 21 60 22 59 23 58 24 57 25 56 26 55 27 54 28 53 29 52 30 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 CK GW BW G AD SC AD SP A DV A8 A9 A6 A7 E1 E2 BD BC BB BA E3 VDD V SS NC DQB8 DQB7 VDDQ VSS DQB6 DQB5 DQB4 DQB3 VSS VDDQ DQB2 DQB1 VSS NC VDD ZZ DQA1 DQA2 VDDQ VSS DQA3 DQA4 DQA5 DQA6 VSS VDDQ DQA7 DQA8 NC Rev: 1.03 2/2000 LBO A5 A4 A3 A2 A1 A0 NC NC V SS VDD NC NC A10 A11 A12 A13 A14 A15 2/23 Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. NC © 1999, Giga Semiconductor, Inc. D GS820H32T/Q-150/138/133/117/100/66 TQFP Pin Description Pin Location 37, 36 35, 34, 33, 32, 100, 99, 82, 81, 44, 45, 46, 47, 48, 49 52, 53, 56, 57, 58, 59, 62, 63 68, 69, 72, 73, 74, 75, 78, 79 2, 3, 6, 7, 8, 9, 12, 13 18, 19, 22, 23, 24, 25, 28, 29 16, 38, 39, 42, 43, 66, 50, 51, 80, 1, 30 87 93, 94 95, 96 89 88 98, 92 97 86 83 84, 85 64 14 31 15, 41, 65, 91 5,10,17, 21, 26, 40, 55, 60, 67, 71, 76, 90 4, 11, 20, 27, 54, 61, 70, 77 Symbol A0, A1 A2-15 DQ A1-DQA8 DQ B1-DQB8 DQC1-DQC8 DQD1-DQD8 NC BW B A, B B BC, BD CK GW E1, E3 E2 G ADV ADSP, ADSC ZZ FT LBO VDD VSS VDDQ Type I I Description Address field LSB’s and Address Counter preset Inputs Address Inputs I/O Data Input and Output pins. No Connect I I I I I I I I I I I I I I I I Byte Write. Writes all enabled bytes. Active Low. Byte Write Enable for DQA, DQB Data I/O’s. Active Low. Byte Write Enable for DQC, DQD Data I/O’s. Active Low. Clock Input Signal. Active High. Global Write Enable. Writes all bytes. Active Low. Chip Enable. Active Low. Chip Enable. Active High. Output Enable. Active Low. Burst address counter advance enable. Active Low. Address Strobe (Processor, Cache Controller). Active Low. Sleep Mode control. Active High. Flow Through or Pipeline mode. Active Low. Linear Burst Order mode. Active Low. Core power supply. I/O and Core Ground. Output driver power supply. H Rev: 1.03 2/2000 3/23 © 1999, Giga Semiconductor, Inc. D Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS820H32T/Q-150/138/133/117/100/66 GS820H18/32/36 Block Diagram Register A0-An D Q A0 D0 A1 D1 Q1 Counter Load A Q0 A0 A1 LBO ADV CK ADSC ADSP GW BW BA Register Memory Array Q D Q D Register D BB Q 32 4 32 Register D BC Q Q Re gister D Registe r Q Register D D BD Q Register D Q Register E1 E2 E3 D Q Register D Q FT G Power Down Control ZZ 1 DQx1-DQx8 Rev: 1.03 2/2000 4/23 © 1999, Giga Semiconductor, Inc. D Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS820H32T/Q-150/138/133/117/100/66 Mode Pin Functions Mode Name Burst Order Control Output Register Control Power Down Control Pin Name State LBO FT ZZ L H or NC L H or NC L or NC H Function Linear Burst Interleaved Burst Flow Through Pipeline Active Standby, IDD = ISB Note: There are pull up devices on LBO and FT pins and a pull down device on and ZZ pin, so those input pins can be unconnected and the chip will operate in the default states as specified in the above tables. Burst Counter Sequences Linear Burst Sequence A[1:0] 1st address 2nd address 3rd address 4th address 00 01 10 11 A[1:0] 01 10 11 00 A[1:0] 10 11 00 01 A[1:0] 11 00 01 10 1st address 2nd address 3rd address 4th address Interleaved Burst Sequence A[1:0] 00 01 10 11 A[1:0] 01 00 11 10 A[1:0] 10 11 00 01 A[1:0] 11 10 01 00 Note: The burst counter wraps to initial state on the 5th clock. Note: The burst counter wraps to initial state on the 5th clock. Byte Write Truth Table Function Read Read Write byte A Write byte B Write byte C Write byte D Write all bytes Write all bytes GW H H H H H H H L BW H L L L L L L X BA X H L H H H L X BB X H H L H H L X BC X H H H L H L X BD X H H H H L L X Notes 1 1 2, 3 2, 3 2, 3, 4 2, 3, 4 2, 3, 4 Note: 1. All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs. 2. Byte Write Enable inputs BA, BB, BC and/or BD may be used in any combination with BW to write single or multiple bytes. 3. All byte I/O’s remain High-Z during all write operations regardless of the state of Byte Write Enable inputs. Rev: 1.03 2/2000 5/23 © 1999, Giga Semiconductor, Inc. D Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS820H32T/Q-150/138/133/117/100/66 Synchronous Truth Table Operation Deselect Cycle, Power Down Deselect Cycle, Power Down Deselect Cycle, Power Down Read Cycle, Begin Burst Read Cycle, Begin Burst Write Cycle, Begin Burst Read Cycle, Continue Burst Read Cycle, Continue Burst Write Cycle, Continue Burst Write Cycle, Continue Burst Read Cycle, Suspend Burst Read Cycle, Suspend Burst Write Cycle, Suspend Burst Write Cycle, Suspend Burst State Address Used Diagram Key5 None None None External External External Next Next Next Next Current Current Current Current X X X R R W CR CR CW CW E1 H L L L L L X H X H X H X H E2 X F F T T T X X X X X X X X ADSP X L H L H H H X H X H X H X ADSC L X L X L L H H H H H H H H ADV X X X X X X L L L L H H H H W3 X X X X F T F F T T F F T T DQ4 High-Z High-Z High-Z Q Q D Q Q D D Q Q D D Note: 1. X = Don’t Care, H = High, L = Low. 2. E = T (True) if E2 = 1 and E3 = 0; E = F (False) if E2 = 0 or E3 = 1. 3. W = T (True) and F (False) is defined in the Byte Write Truth Table preceding. 4. G is an asynchronous input. G can be driven high at any time to disable active output drivers. G low can only enable active drivers (shown as “Q” in the Truth Table above). 5. 6. 7. All input combinations shown above are tested and supported. Input combinations shown in gray boxes need not be used to accomplish basic synchronous or synchronous burst operations and may be avoided for simplicity. Tying ADSP high and ADSC low allows simple non-burst synchronous operations. See BOLD items above. Tying ADSP high and ADV low while using ADSC to load new addresses allows simple burst operations. See ITALIC items above. Rev: 1.03 2/2000 6/23 © 1999, Giga Semiconductor, Inc. D Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS820H32T/Q-150/138/133/117/100/66 Simplified State Diagram X Deselect W W Simple Synchronous Operation R R X CW First Write R CR First Read X CR Simple Burst Synchronous Operation W R X Burst Write CR CW R Burst Read X CR Notes: 1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied Low. 2. The upper portion of the diagram assumes active use of only the Enable (E1, E2, E3) and Write (BA, BB, BC, BD, BW and GW) control inputs and that ADSP is tied high and ADSC is tied low. 3. The upper and lower portions of the diagram together assume active use of only the Enable, Write and ADSC control inputs and assumes ADSP is tied high and ADV is tied low. Rev: 1.03 2/2000 7/23 © 1999, Giga Semiconductor, Inc. D Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS820H32T/Q-150/138/133/117/100/66 Simplified State Diagram with G X Deselect W W X W CW R R First Write R CR First Read X CR CW W X Burst Write R CR W CW R X Burst Read CW CR Notes: 1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G. 2. Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from Read cycles to Write cycles without passing through a Deselect cycle. Dummy Read cycles increment the address counter just like normal Read cycles. 3. Transitions shown in grey tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet Data Input Set Up Time. Rev: 1.03 2/2000 8/23 © 1999, Giga Semiconductor, Inc. D Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS820H32T/Q-150/138/133/117/100/66 Absolute Maximum Ratings (All voltages reference to VSS) Symbol VDD VDDQ VCK VI/O VIN IIN IOUT PD TSTG TBIAS Description Voltage on VDD Pins Voltage in VDDQ Pins Voltage on Clock Input Pin Voltage on I/O Pins Voltage on Other Input Pins Input Current on Any Pin Output Current on Any I/O Pin Package Power Dissipation Storage Temperature Temperature Under Bias Value -0.5 to 4.6 -0.5 to VDD -0.5 to 6 -0.5 to VDDQ+0.5 (≤ 4.6 V max.) -0.5 to VDD+0.5 (≤ 4.6 V max.) +/- 20 +/- 20 1.5 -55 to 125 -55 to 125 Unit V V V V V mA mA W oC o C Note: Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component. Recommended Operating Conditions Parameter Supply Voltage I/O Supply Voltage Input High Voltage Input Low Voltage Ambient Temperature (Commercial Range Versions) Ambient Temperature (Industrial Range Versions) Symbol VDD VDDQ VIH VIL TA TA Min. 3.135 2.375 1.7 -0.3 0 -40 Typ. 3.3 2.5 ----25 25 Max. 3.6 VDD VDD+0.3 0.8 70 85 Unit V V V V °C °C Notes 1 2 2 3 3 Note: 1. Unless otherwise noted, all performance specifications quoted are evaluated for worst case at both 2.75V ≤ VDDQ ≤ 2.375V (i.e. 2.5V I/O) and 3.6V ≤ VDDQ ≤ 3.135V (i.e. 3.3V I/O) and quoted at whichever condition is worst case. 2. This device features input buffers compatible with both 3.3V and 2.5V I/O drivers. 3. Most speed grades and configurations of this device are offered in both Commercial and Industrial Temperature ranges. The part number of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 4. Input Under/overshoot voltage must be -2V > Vi < V DD+2V with a pulse width not to exceed 20% tKC. Rev: 1.03 2/2000 9/23 © 1999, Giga Semiconductor, Inc. D Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS820H32T/Q-150/138/133/117/100/66 Undershoot Measurement and Timing VIH VDD+-2.0V VSS 50% VSS-2.0V 20% tKC VIL 50% VDD Overshoot Measurement and Timing 20% tKC Capacitance (TA=25oC, f=1MHZ, VDD=3.3V) Parameter Control Input Capacitance Input Capacitance Output Capacitance Note: This parameter is sample tested. Symbol CI CIN COUT Test conditions VDD=3.3V VIN=0V VOUT=0V Typ. 3 4 6 Max. 4 5 7 Unit pF pF pF Package Thermal Characteristics Rating Junction to Ambient (at 200 lfm) Junction to Ambient (at 200 lfm) Junction to Case (TOP) Layer Board single four Symbol RΘJA RΘJA RΘJC TQFP Max 40 24 9 QFP Max TBD TBD TBD Unit °C/W °C/W °C/W Notes 1,2,4 1,2,4 3,4 Notes: 1. Junction temperature is a function of SRAM power dissipation, package thermal resistance, mounting board temperature, ambient. Temperature air flow, board density, and PCB thermal resistance. 2. SCMI G-38-87. 3. Average thermal resistance between die and top surface, MIL SPEC-883, Method 1012.1. 4. For x18 configuration, consult factory. Rev: 1.03 2/2000 10/23 © 1999, Giga Semiconductor, Inc. D Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS820H32T/Q-150/138/133/117/100/66 AC Test Conditions Parameter Input high level Input low level Input slew rate Input reference level Output reference level Conditions 2.3V 0.2V 1V/ns 1.25V 1.25V Output load Fig. 1& 2 Notes: 1. Include scope and jig capacitance. 2. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted. 3. Output Load 2 for tLZ, tHZ, tOLZ and tOHZ. 4. Device is deselected as defined by the Truth Table. Output Load 1 DQ 50Ω VT=1.25V * Distributed Test Jig Capacitance Output Load 2 2.5V 30pF* DQ 5pF* 225Ω 225Ω DC Electrical Characteristics Parameter Input Leakage Current (except mode pins) ZZ Input Current Mode Pin Input Current Output Leakage Current Output High Voltage Output High Voltage Output Low Voltage Symbol IIL IINZZ IINM IOL VOH VOH VOL Test Conditions VIN = 0 to VDD VDD ≥ VIN ≥ VIH 0V ≤ VIN ≤ VIH VDD ≥ VIN ≥ VIL 0V ≤ VIN ≤ VIL Output Disable, VOUT = 0 to VDD IOH = - 8mA, VDDQ=2.375V IOH = -8mA, VDDQ=3.135V IOL = 8mA Min -1uA -1uA -1uA -300uA -1uA -1uA 1.7V 2.4V Max 1uA 1uA 300uA 1uA 1uA 1uA 0.4V Rev: 1.03 2/2000 11/23 © 1999, Giga Semiconductor, Inc. D Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS820H32T/Q-150/138/133/117/100/66 Operating Currents Parameter Operating Current Standby Current Deselect Current Operating Currents Parameter Operating Current Standby Current Deselect Current Test Conditions Device Selected; All other inputs ≥VIH or ≤ VIL Output open ZZ ≥ VDD - 0.2V Device Deselected; All other inputs ≥ VIH or ≤ VIL Test Conditions Device Selected; All other inputs ≥VIH or ≤ VIL Output open ZZ ≥ VDD - 0.2V Device Deselected; All other inputs ≥ VIH or ≤ VIL Symbol IDD Pipeline IDD Flow-Thru ISB Flow-Thru IDD Pipeline IDD Flow-Thru -150 0 to 70°C 270mA 170mA 10mA 90mA 45mA -40 to 85°C 275mA 175mA 15mA 95mA 50mA -138 0 to 70°C 245mA 120mA 10mA 80mA 40mA -40 to 85°C 250mA 125mA 15mA 85mA 45mA -133 0 to 70°C 240mA 120mA 10mA 80mA 40mA -40 to 85°C 245mA 125mA 15mA 85mA 45mA Symbol IDD Pipeline IDD Flow-Thru ISB Flow-Thru IDD Pipeline IDD Flow-Thru -117 0 to 70°C 210mA 120mA 10mA 70mA 40mA -40 to 85°C 215mA 125mA 15mA 75mA 45mA -100 0 to 70°C 180mA 120mA 10mA 60mA 40mA -40 to 85°C 185mA 125mA 15mA 65mA 45mA -66 0 to 70°C 150mA 95mA 10mA 50mA 40mA -40 to 85°C 155mA 100mA 15mA 55mA 45mA Rev: 1.03 2/2000 12/23 © 1999, Giga Semiconductor, Inc. D Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS820H32T/Q-150/138/133/117/100/66 AC Electrical Characteristics Parameter Clock Cycle Time Pipeline Clock to Output Valid Clock to Output Invalid Clock to Output in Low-Z Clock Cycle Time FlowThru Clock to Output Valid Clock to Output Invalid Clock to Output in Low-Z Clock HIGH Time Clock LOW Time Clock to Output in High-Z G to Output Valid G to output in Low-Z G to output in High-Z Setup time Hold time ZZ setup time ZZ hold time ZZ recovery Symbol tKC tKQ tKQX tLZ 1 -150 Min 6.6 --1.5 1.5 10.5 --3 3 1.8 1.8 1.5 --0 --1.7 0.5 5 1 20 Max --3.8 ------9.0 --------3.8 3.8 --4 ----------- -138 Min 7.25 --2 2 15 --3 3 1.9 1.9 1.5 --0 --2 0.5 5 1 20 Max --4 ------9.7 --------4 4 --4 ----------- -133 Min 7.5 --2 2 15 --3 3 1.9 1.9 1.5 --0 --2 0.5 5 1 20 Max --4 ------10 --------4 4 --4 ----------- -117 Min 8.5 --2 2 15 --3 3 2 2 1.5 --0 --2 0.5 5 1 20 Max --4.5 ------11 --------4 4 --4 ----------2 0 3 3 3 3 2 2 -100 Min 10 5 2 2 20 12 3 3 4 4 5 5 0 5 2 0.5 5 1 20 0.5 5 1 20 Max -66 Min 12.5 6 Max Unit ns ns ns ns ns tKC tKQ tKQX tLZ1 tKH tKL tHZ1 tOE tOLZ1 tOHZ1 tS tH tZZS2 tZZH2 tZZR 15 18 ns ns ns ns ns 6 6 6 ns ns ns ns ns ns ns ns ns Notes: 1. These parameters are sampled and are not 100% tested 2. ZZ is an asynchronous signal. However, In order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold times as specified above. Rev: 1.03 2/2000 13/23 © 1999, Giga Semiconductor, Inc. D Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS820H32T/Q-150/138/133/117/100/66 Write Cycle Timing Single Write Burst Write Write Deselected CK tS tH tKH tKL tKC ADSP is blocked by E1 inactive ADSP tS tH ADSC initiated write ADSC tS tH ADV tS tH ADV must be inactive for ADSP Write WR2 WR3 A0-An GW WR1 tS tH tS tH BW tS tH BA - BD tS tH WR1 WR1 WR2 WR3 WR3 E1 masks ADSP E1 tS tH Deselected with E2 E2 tS tH E2 and E3 only sampled with ADSP or ADSC E3 G tS tH Write specified byte for 2A and all bytes for 2B, 2C& 2D D2A D2B D2C D2D D3A DQA - DQD Hi-Z D1A Rev: 1.03 2/2000 14/23 © 1999, Giga Semiconductor, Inc. D Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS820H32T/Q-150/138/133/117/100/66 Flow Through Read Cycle Timing Single Read tKL Burst Read CK tS tH tKH tKC ADSP is blocked by E1 inactive ADSP tS tH ADSC initiated read ADSC tS tH Suspend Burst Suspend Burst ADV tS tH A0-An GW RD1 tS RD2 RD3 tH tS tH BW BA - BD tS tH E1 masks ADSP E1 tS tH E2 and E3 only sampled with ADSP or ADSC Deselected with E 2 E2 tS tH E3 tOE tOHZ G tOLZ tKQX Q1 A tLZ tKQ tHZ Q2A Q2B Q2C Q2D Q3A tKQX DQA-DQD Hi-Z Rev: 1.03 2/2000 15/23 © 1999, Giga Semiconductor, Inc. D Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS820H32T/Q-150/138/133/117/100/66 Flow Through Read-Write Cycle Timing Single Read Single Write Burst Read CK tS tH tKH tKL tKC ADSP is blocked by E inactive ADSP tS tH ADSC initiated read ADSC tS tH ADV tS tH A0-An GW RD1 WR1 RD2 tS tH tS tH BW tS tH BA - BD WR1 tS tH E1 masks ADSP E1 tS tH E2 and E3 only sampled with ADSP and ADSC E2 tS tH Deselected with E3 E3 tOE tOHZ G tKQ tS Q1A tH Q2A Q2B Q2C Q2D Q2A DQA - DQD Hi-Z D1A Burst wrap around to it’s initial state Rev: 1.03 2/2000 16/23 © 1999, Giga Semiconductor, Inc. D Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS820H32T/Q-150/138/133/117/100/66 Pipelined SCD Read Cycle Timing Single Read Burst Read tKH tKL tKC ADSP is blocked by E1 inactive CK tS tH ADSP ADSC tS tH tS tH ADSC initiated read Suspend Burst ADV tS tH An GW RD1 tS RD2 RD3 tH tS tH BW BWA - BWD tS tH E1 masks ADSP E1 tS tH E2 and E3 only sampled with ADSP or ADSC Deselected with E 2 E2 tS tH E3 tOE G DQA - DQD Hi-Z tOLZ Q1A tLZ tOHZ tKQX Q2A Q2B Q2C Q2D tKQX Q3A tHZ tKQ Rev: 1.03 2/2000 17/23 © 1999, Giga Semiconductor, Inc. D Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS820H32T/Q-150/138/133/117/100/66 Pipelined SCD Read - Write Cycle Timing Single Read tKL Single Write Burst Read CK tS tH tKH tKC ADSP is blocked by E inactive ADSP tS tH ADSC initiated read ADSC tS tH ADV tS tH A0-An GW RD1 WR1 RD2 tS tH tS tH BW tS tH BA - BWD tS tH WR1 E1 masks ADSP E1 tS tH E2 and E3 only sampled with ADSP and ADSC E2 tS tH Deselected with E3 E3 tOE tOHZ G DQa - DQd Hi-Z tKQ Q1A tS tH D1A Q2A Q2B Q2C Q2D Rev: 1.03 2/2000 18/23 © 1999, Giga Semiconductor, Inc. D Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS820H32T/Q-150/138/133/117/100/66 Sleep Mode Timing Diagram CK tS tH tKC tKH tKL ADSP ADSC tZZS ~~~~~ ~ ~ ~~ ~ tZZH tZZR ZZ Snooze Application Tips Single and Dual Cycle Deselect SCD devices force the use of “dummy read cycles” (read cycles that are launched normally but that are ended with the output drivers inactive) in a fully synchronous environment. Dummy read cycles waste performance but their use usually assures there will be no bus contention in transitions from reads to writes or between banks of RAMs. DCD SRAMs do not waste bandwidth on dummy cycles and are logically simpler to manage in a multiple bank application (wait states need not be inserted at bank address boundary crossings) but greater care must be exercised to avoid excessive bus contention. GS 820H32 Output Driver Characteristics Rev: 1.03 2/2000 19/23 © 1999, Giga Semiconductor, Inc. D Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS820H32T/Q-150/138/133/117/100/66 H 120.0 100.0 Pull Down Drivers 80.0 60.0 40.0 20.0 VDDQ I Out I Out (mA) 0.0 VOut -20.0 VSS -40.0 -60.0 -80.0 Pull Up Drivers -100.0 -120.0 -140.0 -0.5 0 0.5 1 1.5 2 2.5 3 3.5 4 V Out (Pull Down) VDDQ - V Out (Pull Up) 3.6V PD HD 3.3V PD HD 3.1V PD HD 3.1V PU HD 3.3V PU HD 3.6V PU HD Rev: 1.03 2/2000 20/23 © 1999, Giga Semiconductor, Inc. D Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS820H32T/Q-150/138/133/117/100/66 TQFPand QFP Package Drawing L L1 θ c P in 1 D1 D e b A1 Y A2 E1 E Symbol A1 A2 b c D D1 E E1 e L L1 Y θ Description Standoff Body Thickness Lead Width Lead Thickness Terminal Dimension Package Body Terminal Dimension Package Body Lead Pitch Foot Length Lead Length Coplanarity Lead Angle Min. 0.05 1.35 0.20 0.09 21.9 19.9 15.9 13.9 0.45 TQFP Nom. 0.10 1.40 0.30 22.0 20.0 16.0 14.0 0.65 0.60 1.00 Max 0.15 1.45 0.40 0.20 22.1 20.1 16.1 14.1 0.75 0.10 Min. 0.25 2.55 0.20 0.10 22.95 19.9 17.0 13.9 .60 QFP Nom. 0.35 2.72 0.30 0.15 23.2 20.0 17.2 14.0 0.65 0.80 1.60 Max 0.45 2.90 0.40 0.20 23.45 20.1 17.4 14.1 1.00 0.10 0° 7° 0° 7° Notes: 1. All dimensions are in millimeters (mm). 2. Package width and length do not include mold protrusion Rev: 1.03 2/2000 21/23 © 1999, Giga Semiconductor, Inc. D Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS820H32T/Q-150/138/133/117/100/66 Org 64K x 32 64K x 32 64K x 32 64K x 32 64K x 32 64K x 32 64K x 32 64K x 32 64K x 32 64K x 32 64K x 32 64K x 32 64K x 32 64K x 32 64K x 32 64K x 32 64K x 32 64K x 32 64K x 32 64K x 32 64K x 32 64K x 32 64K x 32 64K x 32 Part Number1 GS820H32T-150 GS820H32T-138 GS820H32T-133 GS820H32T-4 GS820H32T-5 GS820H32T-6 GS820H32T-150I GS820H32T-138I GS820H32T-133I GS820H32T-4I GS820H32T-5I GS820H32T-6I GS820H32Q-150 GS820H32Q-138 GS820H32Q-133 GS820H32Q-4 GS820H32Q-5 GS820H32Q-6 GS820H32Q-150I GS820H32Q-138I GS820H32Q-133I GS820H32Q-4I GS820H32Q-5I GS820H32Q-6I Type Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Pipeline/Flow Through Package TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP QFP QFP QFP QFP QFP QFP QFP QFP QFP QFP QFP QFP Speed2 T A (Mhz/ 3 ns) 150/9 138/9.7 133/10 117/11 100/12 66/18 150/9 138/9.7 133/10 117/11 100/12 66/18 150/9 138/9.7 133/10 117/11 100/12 66/18 150/9 138/9.7 133/10 117/11 100/12 66/18 C C C C C C I I I I I I C C C C C C I I I I I I Status Not Available Not Available Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS820H32T-100IT. 2. The speed column indicates the cycle frequency (Mhz) of the device in Pipelined mode and the latency (ns) in Flow Through mode. Each device is Pipeline / Flow through mode selectable by the user. 3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range. 4. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are covered in this data sheet. See the GSI Technology web site for a complete listing of current offerings. Rev: 1.03 2/2000 22/23 © 1999, Giga Semiconductor, Inc. D Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS820H32T/Q-150/138/133/117/100/66 Revision History DS/DateRev. Code: Old; New Types of Changes Format or Content Format Revisions • This was the first release of 2 Meg Burst Datasheets in the new format. They included information for the Fine Pitch BGA package. • Took out the Fine Pitch BGA information. GSGS820H3218/36 Rev 1.00 9/1999A GSGS820H3218/36 Rev 1.00 9/1999A; 1.01 11/1999B Content • Ordering information. Changed 128K x 32 to 64K x 32; Typo • Ordering information. Changed “0” to go before “H” or “E” in part number. • Ordering information. Changed - 117 to -4, -100 to -5. and -66 to -6. • New GSI Logo • Switched TKQ with TCycle in Flow Through part of table on page 1. GSGS820H3218/36 Rev 1.01 11/1999B; 1.02 1/2000C GS820H3218/361.02 1/ Content 2000C;820H3218/361.03 2/ 2000D Format/Content Rev: 1.03 2/2000 23/23 © 1999, Giga Semiconductor, Inc. D Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.