GS840Z36AT-100

GS840Z18/36AT-180/166/150/100 100-Pin TQFP Commercial Temp Industrial Temp Features • 256K x 18 and 128K x 36 configurations • User configurable Pipeline and Flow Through mode • NBT (No Bus Turn Around) functionality allows zero wait read-write-read bus utilization • Fully pin compatible with both pipelined and flow through NtRAM™, NoBL™ and ZBT™ SRAMs • Pin-compatible with 2M, 8M and 16M devices • 3.3 V +10%/–5% core power supply • 2.5 V or 3.3 V I/O supply • LBO pin for Linear or Interleave Burst mode • Byte write operation (9-bit Bytes) • 3 chip enable signals for easy depth expansion • Clock Control, registered address, data, and control • ZZ Pin for automatic power-down • JEDEC-standard 100-lead TQFP package • Pb-Free 100-lead TQFP package available 4Mb Pipelined and Flow Through Synchronous NBT SRAMs 180 MHz–100 MHz 3.3 V VDD 2.5 V and 3.3 V VDDQ Because it is a synchronous device, address, data inputs, and read/ write control inputs are captured on the rising edge of the input clock. Burst order control (LBO) must be tied to a power rail for proper operation. Asynchronous inputs include the sleep mode enable (ZZ) and Output Enable. Output Enable can be used to override the synchronous control of the output drivers and turn the RAM's output drivers off at any time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex offchip write pulse generation required by asynchronous SRAMs and simplifies input signal timing. The GS840Z18/36AT may be configured by the user to operate in Pipeline or Flow Through mode. Operating as a pipelined synchronous device, in addition to the rising-edgetriggered registers that capture input signals, the device incorporates a rising-edge-triggered output register. For read cycles, pipelined SRAM output data is temporarily stored by the edge triggered output register during the access cycle and then released to the output drivers at the next rising edge of clock. The GS840Z18/36AT is implemented with GSI's high performance CMOS technology and is available in a JEDECstandard 100-pin TQFP package. Functional Description The GS840Z18/36AT is a 4Mbit Synchronous Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other pipelined read/double late write or flow through read/single late write SRAMs, allow utilization of all available bus bandwidth by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. Parameter Synopsis Pipeline 3-1-1-1 Flow Through 2-1-1-1 tCycle tKQ IDD tKQ tCycle IDD –180 5.5 ns 3.2 ns 335 mA 8 ns 9.1 ns 210 mA –166 6.0 ns 3.5 ns 310 mA 8.5 ns 10 ns 190 mA –150 6.6 ns 3.8 ns 280 mA 10 ns 12 ns 165 mA –100 10 ns 4.5 ns 190 mA 12 ns 15 ns 135 mA Rev: 1.03 11/2004 1/24 © 2001, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS840Z18/36AT-180/166/150/100 GS840Z18AT Pinout (Package T) VDDQ VSS NC NC DQ B DQB VSS VDDQ DQ B DQB FT VDD VDD VSS DQ B DQB VDDQ VSS DQ B DQB DQPB NC VSS VDDQ NC NC NC NC NC NC 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 80 2 79 3 78 4 77 5 76 6 75 7 74 8 73 9 72 256K x 18 10 71 Top View 11 70 12 69 13 68 14 67 15 66 16 65 17 64 18 63 19 62 20 61 21 60 22 59 23 58 24 57 25 56 26 55 27 54 28 53 29 52 30 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 A A E1 E2 NC NC BB BA E3 VDD VSS CK W CKE G ADV NC NC A A A NC NC VDDQ VSS NC DQPA DQA DQA VSS VDDQ DQA DQA VSS NC VDD ZZ DQA DQA VDDQ VSS DQA DQA NC NC VSS VDDQ NC NC NC Rev: 1.03 11/2004 LBO A A A A A1 A0 NC NC VSS VDD NC NC A A A A A A A 2/24 © 2001, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS840Z18/36AT-180/166/150/100 GS840Z36AT Pinout (Package T) DQPC DQC DQC VDDQ VSS DQC DQC DQ C DQC VSS VDDQ DQ C DQC FT VDD VDD VSS DQ D DQD VDDQ VSS DQ D DQD DQD DQD VSS VDDQ DQD DQD DQPD 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 80 2 79 3 78 4 77 5 76 6 75 7 74 8 73 9 72 128K x 36 10 71 Top View 11 70 12 69 13 68 14 67 15 66 16 65 17 64 18 63 19 62 20 61 21 60 22 59 23 58 24 57 25 56 26 55 27 54 28 53 29 52 30 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 A A E1 E2 BD BC BB BA E3 VDD VSS CK W CKE G ADV NC NC A A DQPB DQB DQB VDDQ VSS DQB DQB DQB DQB VSS VDDQ DQB DQB VSS NC VDD ZZ DQA DQA VDDQ VSS DQA DQA DQA DQA VSS VDDQ DQA DQA DQA Rev: 1.03 11/2004 LBO A A A A A1 A0 NC NC VSS VDD NC NC A A A A A A A 3/24 © 2001, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS840Z18/36AT-180/166/150/100 100-Pin TQFP Pin Descriptions Symbol A 0, A 1 A CK BA BB BC BD W E1 E2 E3 G ADV CKE DQA DQB DQC DQD ZZ FT LBO VDD VSS VDDQ NC Type In In In In In In In In In In In In In In I/O I/O I/O I/O In In In In In In — Description Burst Address Inputs; preload the burst counter Address Inputs Clock Input Signal Byte Write signal for data inputs DQA1-DQA9; active low Byte Write signal for data inputs DQB1-DQB9; active low Byte Write signal for data inputs DQC1-DQC9; active low Byte Write signal for data inputs DQD1-DQD9; active low Write Enable; active low Chip Enable; active low Chip Enable; active high; for self decoded depth expansion Chip Enable; active low, for self decoded depth expansion Output Enable; active low Advance / Load—Burst address counter control pin Clock Input Buffer Enable; active low Byte A Data Input and Output pins Byte B Data Input and Output pins Byte C Data Input and Output pins Byte D Data Input and Output pins Power down control; active high Pipeline/Flow Through Mode Control; active low Linear Burst Order; active low 3.3 V power supply Ground 3.3 V output power supply for noise reduction No Connect Rev: 1.03 11/2004 4/24 © 2001, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS840Z18/36AT-180/166/150/100 GS840Z18/36A NBT SRAM Functional Block Diagram DQa–DQn FT Q Write Data K Register 1 D Write Data Write Address Burst Counter K Register 2 SA1’ SA0’ Data Coherency Read, Write and D K K Control Logic SA1 SA0 K Write Address Register 1 Match Q BA BB BC BD E1 E2 ADV LBO E3 W K FT CKE Rev: 1.03 11/2004 A0– 5/24 CK © 2001, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. G Write Drivers Memory Array Register 2 K Sense Amps K GS840Z18/36AT-180/166/150/100 Functional Details Clocking Deassertion of the Clock Enable (CKE) input blocks the Clock input from reaching the RAM's internal circuits. It may be used to suspend RAM operations. Failure to observe Clock Enable set-up or hold requirements will result in erratic operation. Pipelined Mode Read and Write Operations All inputs (with the exception of Output Enable, Linear Burst Order and Sleep) are synchronized to rising clock edges. Single cycle read and write operations must be initiated with the Advance/Load pin (ADV) held low, in order to load the new address. Device activation is accomplished by asserting all three of the Chip Enable inputs (E1, E2, and E3). Deassertion of any one of the Enable inputs will deactivate the device. Function Read Write Byte “a” Write Byte “b” Write Byte “c” Write Byte “d” Write all Bytes Write Abort/NOP W H L L L L L L BA X L H H H L H BB X H L H H L H BC X H H L H L H BD X H H H L L H Read operation is initiated when the following conditions are satisfied at the rising edge of clock: CKE is asserted low, all three chip enables (E1, E2, and E3) are active, the write enable input signal W is deasserted high, and ADV is asserted low. The address presented to the address inputs is latched in to address register and presented to the memory core and control logic. The control logic determines that a read access is in progress and allows the requested data to propagate to the input of the output register. At the next rising edge of clock the read data is allowed to propagate through the output register and onto the Output pins. Write operation occurs when the RAM is selected, CKE is active and the write input is sampled low at the rising edge of clock. The Byte Write Enable inputs (BA, BB, BC, and BD) determine which bytes will be written. All or none may be activated. A write cycle with no Byte Write inputs active is a no-op cycle. The Pipelined NBT SRAM provides double late write functionality, matching the write command versus data pipeline length (2 cycles) to the read command versus data pipeline length (2 cycles). At the first rising edge of clock, Enable, Write, Byte Write(s), and Address are registered. The Data In associated with that address is required at the third rising edge of clock. Flow through Mode Read and Write Operations Operation of the RAM in Flow Through mode is very similar to operations in Pipeline mode. Activation of a read cycle and the use of the Burst Address Counter is identical. In Flow Through mode the device may begin driving out new data immediately after new address are clocked into the RAM, rather than holding new data until the following (second) clock edge. Therefore, in Flow Through mode the read pipeline is one cycle shorter than in Pipeline mode. Write operations are initiated in the same way as well, but differ in that the write pipeline is one cycle shorter as well, preserving the ability to turn the bus from reads to writes without inserting any dead cycles. While the pipelined NBT RAMs implement a double late write protocol, in Flow Through mode a single late write protocol mode is observed. Therefore, in Flow Through mode, address and control are registered on the first rising edge of clock and data in is required at the data input pins at the second rising edge of clock. Rev: 1.03 11/2004 6/24 © 2001, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS840Z18/36AT-180/166/150/100 Synchronous Truth Table Operation Read Cycle, Begin Burst Read Cycle, Continue Burst NOP/Read, Begin Burst Dummy Read, Continue Burst Write Cycle, Begin Burst Write Cycle, Continue Burst Write Abort, Continue Burst Deselect Cycle, Power Down Deselect Cycle, Power Down Deselect Cycle, Power Down Deselect Cycle Deselect Cycle, Continue Sleep Mode Clock Edge Ignore, Stall Type Address CK CKE ADV W Bx E1 E2 E3 G ZZ R B R B W B B D D D D D External Next External Next External Next Next None None None None None None Current L-H L-H L-H L-H L-H L-H L-H L-H L-H L-H L-H L-H X L-H L L L L L L L L L L L L X H L H L H L H H L L L L H X X H X H X L X X X X X L X X X X X X X L L H X X X H X X X L X L X L X X H X X L X X X H X H X H X X X X L H X X X L X L X L X X X H X L X X X L L H H X X X X X X X X X X L L L L L L L L L L L L H L DQ Q Q High-Z High-Z D D Notes 1,10 2 1,2,10 3 1,3,10 High-Z 1,2,3,10 High-Z High-Z High-Z High-Z High-Z High-Z 4 1 1 Notes: 1. Continue Burst cycles, whether read or write, use the same control inputs. A Deselect continue cycle can only be entered into if a Deselect cycle is executed first. 2. Dummy Read and Write abort can be considered NOPs because the SRAM performs no operation. A Write abort occurs when the W pin is sampled low but no Byte Write pins are active so no write operation is performed. 3. G can be wired low to minimize the number of control signals provided to the SRAM. Output drivers will automatically turn off during write cycles. 4. If CKE High occurs during a pipelined read cycle, the DQ bus will remain active (Low Z). If CKE High occurs during a write cycle, the bus will remain in High Z. 5. X = Don’t Care; H = Logic High; L = Logic Low; Bx = High = All Byte Write signals are high; Bx = Low = One or more Byte/Write signals are Low 6. All inputs, except G and ZZ must meet setup and hold times of rising clock edge. 7. Wait states can be inserted by setting CKE high. 8. This device contains circuitry that ensures all outputs are in High Z during power-up. 9. A 2-bit burst counter is incorporated. 10. The address counter is incriminated for all Burst continue cycles. Rev: 1.03 11/2004 7/24 © 2001, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS840Z18/36AT-180/166/150/100 Pipelined and Flow Through Read-Write Control State Diagram D B R Deselect W D D W R R New Read B New Write W B R W R W B Burst Read D Burst Write D B Key Input Command Code Notes 1. The Hold command (CKE Low) is not shown because it prevents any state change. ƒ Transition Current State (n) Next State (n+1) n n+1 2. W, R, B, and D represent input command codes as indicated in the Synchronous Truth Table. n+2 n+3 Clock (CK) Command ƒ Current State ƒ Next State ƒ ƒ Current State and Next State Definition for Pipelined and Flow Through Read/Write Control State Diagram Rev: 1.03 11/2004 8/24 © 2001, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS840Z18/36AT-180/166/150/100 Pipeline Mode Data I/O State Diagram Intermediate BW High Z (Data In) D R Intermediate W Intermediate Intermediate RB Data Out (Q Valid) D Intermediate W R High Z B D Intermediate Key Input Command Code Notes 1. The Hold command (CKE Low) is not shown because it prevents any state change. ƒ Transition Current State (n) Transition Next State (n+2) Intermediate State (N+1) 2. W, R, B, and D represent input command codes as indicated in the Truth Tables. n n+1 n+2 n+3 Clock (CK) Command ƒ Current State ƒ Intermediate State ƒ Next State ƒ Current State and Next State Definition for Pipeline Mode Data I/O State Diagram Rev: 1.03 11/2004 9/24 © 2001, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS840Z18/36AT-180/166/150/100 Flow Through Mode Data I/O State Diagram BW High Z (Data In) D R W RB Data Out (Q Valid) D W R High Z B D Key Input Command Code Notes 1. The Hold command (CKE Low) is not shown because it prevents any state change. ƒ Transition Current State (n) n Next State (n+1) n+1 n+2 2. W, R, B, and D represent input command codes as indicated in the Truth Tables. n+3 Clock (CK) Command ƒ Current State ƒ Next State ƒ ƒ Current State and Next State Definition for: Pipelined and Flow Through Read Write Control State Diagram Rev: 1.03 11/2004 10/24 © 2001, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS840Z18/36AT-180/166/150/100 Burst Cycles Although NBT RAMs are designed to sustain 100% bus bandwidth by eliminating turnaround cycle when there is transition from Read to Write, multiple back-to-back reads or writes may also be performed. NBT SRAMs provide an on-chip burst address generator that can be utilized, if desired, to further simplify burst read or write implementations. The ADV control pin, when driven high, commands the SRAM to advance the internal address counter and use the counter generated address to read or write the SRAM. The starting address for the first cycle in a burst cycle series is loaded into the SRAM by driving the ADV pin low, into Load mode. Burst Order The burst address counter wraps around to its initial state after four addresses (the loaded address and three more) have been accessed. The burst sequence is determined by the state of the Linear Burst Order pin (LBO). When this pin is low, a linear burst sequence is selected. When the RAM is installed with the LBO pin tied high, interleaved burst sequence is selected. See the tables below for details. Mode Pin Functions Mode Name Burst Order Control Power Down Control Pin Name LBO ZZ State L H L or NC H Function Linear Burst Interleaved Burst Active Standby, IDD = ISB Note: There is a pull-down device on the ZZ pin, so this input pin can be unconnected and the chip will operate in the default states as specified in the above tables. Burst Counter Sequences Linear Burst Sequence A[1:0] A[1:0] A[1:0] A[1:0] 1st address 2nd address 3rd address 4th address 00 01 10 11 01 10 11 00 10 11 00 01 11 00 01 10 Interleaved Burst Sequence A[1:0] A[1:0] A[1:0] A[1:0] 1st address 2nd address 3rd address 4th address 00 01 10 11 01 00 11 10 10 11 00 01 11 10 01 00 Note: The burst counter wraps to initial state on the 5th clock. Note: The burst counter wraps to initial state on the 5th clock. BPR 1999.05.18 Rev: 1.03 11/2004 11/24 © 2001, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS840Z18/36AT-180/166/150/100 Sleep Mode During normal operation, ZZ must be pulled low, either by the user or by its internal pull-down resistor. When ZZ is pulled high, the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to low, the SRAM operates normally after 2 cycles of wake up time. Sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of Sleep Mode is dictated by the length of time the ZZ is in a high state. After entering Sleep mode, all inputs except ZZ become disabled and all outputs go to High-Z The ZZ pin is an asynchronous, active high input that causes the device to enter Sleep mode. When the ZZ pin is driven high, ISB2 is guaranteed after the time tZZI is met. Because ZZ is an asynchronous input, pending operations or operations in progress may not be properly completed if ZZ is asserted. Therefore, Sleep mode must not be initiated until valid pending operations are completed. Similarly, when exiting Sleep mode during tZZR, only a Deselect or Read commands may be applied while the SRAM is recovering from Sleep mode. Sleep Mode Timing Diagram tKH tKC CK tZZR tZZS ZZ tZZH tKL Designing for Compatibility The GSI NBT SRAMs offer users a configurable selection between Flow Through mode and Pipeline mode via the FT signal found on Pin 14. Not all vendors offer this option, however, most mark Pin 14 as VDD or VDDQ on pipelined parts and VSS on flow through parts. GSI NBT SRAMs are fully compatible with these sockets. Pin 66, a No Connect (NC) on GSI’s GS840Z18/36A NBT SRAM, the Parity Error open drain output on GSI’s GS881Z18/36 NBT SRAM, is often marked as a power pin on other vendor’s NBT-compatible SRAMs. Specifically, it is marked VDD or VDDQ on pipelined parts and VSS on flow through parts. Users of GSI NBT devices who are not actually using the ByteSafe™ parity feature may want to design the board site for the RAM with Pin 66 tied high through a 1k ohm resistor in Pipeline mode applications or tied low in Flow Through mode applications in order to keep the option to use non-configurable devices open. By using the pull-up resistor, rather than tying the pin to one of the power rails, users interested in upgrading to GSI’s ByteSafe NBT SRAMs (GS881Z18/36), featuring Parity Error detection and JTAG Boundary Scan, will be ready for connection to the active low, open drain Parity Error output driver at Pin 66 on GSI’s TQFP ByteSafe RAMs. Rev: 1.03 11/2004 12/24 © 2001, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS840Z18/36AT-180/166/150/100 Absolute Maximum Ratings (All voltages reference to VSS) Symbol VDD VDDQ VI/O VIN IIN IOUT PD TSTG TBIAS Description Voltage on VDD Pins Voltage in VDDQ Pins Voltage on I/O Pins Voltage on Other Input Pins Input Current on Any Pin Output Current on Any I/O Pin Package Power Dissipation Storage Temperature Temperature Under Bias Value –0.5 to 4.6 –0.5 to 4.6 –0.5 to VDDQ +0.5 (≤ 4.6 V max.) –0.5 to VDD +0.5 (≤ 4.6 V max.) +/–20 +/–20 1.5 –55 to 125 –55 to 125 Unit V V V V mA mA W o o C C Note: Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component. Power Supply Voltage Ranges Parameter 3.3 V Supply Voltage 2.5 V Supply Voltage 3.3 V VDDQ I/O Supply Voltage 2.5 V VDDQ I/O Supply Voltage Symbol VDD3 VDD2 VDDQ3 VDDQ2 Min. 3.0 2.3 3.0 2.3 Typ. 3.3 2.5 3.3 2.5 Max. 3.6 2.7 3.6 2.7 Unit V V V V Notes Notes: 1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. Rev: 1.03 11/2004 13/24 © 2001, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS840Z18/36AT-180/166/150/100 VDDQ3 Range Logic Levels Parameter VDD Input High Voltage VDD Input Low Voltage VDDQ I/O Input High Voltage VDDQ I/O Input Low Voltage Symbol VIH VIL VIHQ VILQ Min. 2.0 –0.3 2.0 –0.3 Typ. — — — — Max. VDD + 0.3 0.8 VDDQ + 0.3 0.8 Unit V V V V Notes 1 1 1,3 1,3 Notes: 1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. 3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V. VDDQ2 Range Logic Levels Parameter VDD Input High Voltage VDD Input Low Voltage VDDQ I/O Input High Voltage VDDQ I/O Input Low Voltage Symbol VIH VIL VIHQ VILQ Min. 0.6*VDD –0.3 0.6*VDD –0.3 Typ. — — — — Max. VDD + 0.3 0.3*VDD VDDQ + 0.3 0.3*VDD Unit V V V V Notes 1 1 1,3 1,3 Notes: 1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. 3. VIHQ (max) is voltage on VDDQ pins plus 0.3 V. Recommended Operating Temperatures Parameter Ambient Temperature (Commercial Range Versions) Ambient Temperature (Industrial Range Versions) Symbol TA TA Min. 0 –40 Typ. 25 25 Max. 70 85 Unit °C °C Notes 2 2 Notes: 1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. Rev: 1.03 11/2004 14/24 © 2001, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS840Z18/36AT-180/166/150/100 Undershoot Measurement and Timing VIH VDD + 2.0 V VSS 50% VSS – 2.0 V 50% tKC VIL 50% VDD Overshoot Measurement and Timing 50% tKC Capacitance (TA = 25oC, f = 1 MHZ, VDD = 2.5 V) Parameter Input Capacitance Input/Output Capacitance Note: These parameters are sample tested. Symbol CIN CI/O Test conditions VIN = 0 V VOUT = 0 V Typ. 4 6 Max. 5 7 Unit pF pF AC Test Conditions Parameter Input high level Input low level Input slew rate Input reference level Output reference level Output load Conditions VDD – 0.2 V 0.2 V 1 V/ns VDD/2 VDDQ/2 Fig. 1 Notes: 1. Include scope and jig capacitance. 2. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted. 3. Device is deselected as defined by the Truth Table. Output Load 1 DQ 50Ω VDDQ/2 * Distributed Test Jig Capacitance 30pF* Rev: 1.03 11/2004 15/24 © 2001, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS840Z18/36AT-180/166/150/100 DC Electrical Characteristics Parameter Input Leakage Current (except mode pins) ZZ Input Current FT Input Current Output Leakage Current Output High Voltage Output High Voltage Output Low Voltage Symbol IIL IIN1 IIN2 IOL VOH2 VOH3 VOL Test Conditions VIN = 0 to VDD VDD ≥ VIN ≥ VIH 0 V ≤ VIN ≤ VIH VDD ≥ VIN ≥ VIL 0 V ≤ VIN ≤ VIL Output Disable, VOUT = 0 to VDD IOH = –8 mA, VDDQ = 2.375 V IOH = –8 mA, VDDQ = 3.135 V IOL = 8 mA Min –1 uA –1 uA –1 uA –100 uA –1 uA –1 uA 1.7 V 2.4 V — Max 1 uA 1 uA 100 uA 1 uA 1 uA 1 uA — — 0.4 V Rev: 1.03 11/2004 16/24 © 2001, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS840Z18/36AT-180/166/150/100 Operating Currents -180 -166 0 to 70°C 310 190 20 20 50 40 –40 to 85°C 320 200 30 30 60 50 -150 0 to 70°C 280 165 20 20 50 35 –40 to 85°C 290 175 30 30 60 45 -100 0 to 70°C 190 135 20 20 40 35 –40 to 85°C 200 145 30 30 50 45 Parameter Test Conditions Device Selected; All other inputs ≥VIH or ≤ VIL Output open ZZ ≥ VDD – 0.2 V Symbol IDD Pipeline IDD Flow-Thru ISB Pipeline ISB Flow-Thru IDD Pipeline IDD Flow-Thru 0 to 70°C 335 210 20 20 55 40 –40 to 85°C 345 220 30 30 65 50 Unit mA mA mA mA mA mA Operating Current Standby Current Deselect Current Device Deselected; All other inputs ≥ VIH or ≤ VIL Rev: 1.03 11/2004 17/24 © 2001, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS840Z18/36AT-180/166/150/100 AC Electrical Characteristics Parameter Clock Cycle Time Pipeline Symbol tKC tKQ tKQX tLZ 1 -180 Min 5.5 — 1.5 1.5 9.1 — 3.0 3.0 1.3 1.5 1.5 — 0 — 1.5 0.5 5 1 20 Max — 3.2 — — — 8.0 — — — — 3.2 3.2 — 3.2 — — — — — Min 6.0 — 1.5 1.5 10.0 — 3.0 3.0 1.3 1.5 1.5 — 0 — 1.5 0.5 5 1 20 -166 Max — 3.5 — — — 8.5 — — — — 3.5 3.5 — 3.5 — — — — — Min 6.7 — 1.5 1.5 12.0 — 3.0 3.0 1.3 1.5 1.5 — 0 — 1.5 0.5 5 1 20 -150 Max — 3.8 — — — 10.0 — — — — 3.8 3.8 — 3.8 — — — — — Min 10 — 1.5 1.5 15.0 — 3.0 3.0 1.3 1.5 1.5 — 0 — 2.0 0.5 5 1 20 -100 Max — 4.5 — — — 12.0 — — — — 5 5 — 5 — — — — — Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Clock to Output Valid Clock to Output Invalid Clock to Output in Low-Z Clock Cycle Time Clock to Output Valid Clock to Output Invalid Clock to Output in Low-Z Clock HIGH Time Clock LOW Time Clock to Output in High-Z G to Output Valid G to output in Low-Z G to output in High-Z Setup time Hold time ZZ setup time ZZ hold time ZZ recovery tKC tKQ tKQX tLZ1 tKH tKL tHZ1 tOE tOLZ tS tH tZZS2 tZZH2 tZZR 1 Flow Through tOHZ1 Notes: 1. These parameters are sampled and are not 100% tested 2. ZZ is an asynchronous signal. However, In order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold times as specified above. Rev: 1.03 11/2004 18/24 © 2001, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS840Z18/36AT-180/166/150/100 Pipeline Mode Timing Write A Read B Suspend tKH tKL Read C tKC Write D writeno-op Read E Deselect CK tH tS A A tH tS B C D E CKE tH tS E* tH tS ADV tH tS W tH tS tS tH Bn tH tS tLZ tKQ Q(B) Q(C) D(D) Q(E) tHZ tKQX DQ D(A) Rev: 1.03 11/2004 19/24 © 2001, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS840Z18/36AT-180/166/150/100 Flow Through Mode Timing Write A Write B Write B+1 tKL tKH CK Read C tKC Cont Read D Write E Read F Write G tH tS CKE tH tS E tH tS ADV tH tS W tH tS Bn tH tS A0–An A B C D E F G tKQ tH tS DQ D(A) D(B) tKQ tLZ D(B+1) Q(C) tKQX tHZ Q(D) tLZ D(E) Q(F) tKQX D(G) tOLZ tOE tOHZ G *Note: E = High(False) if E1 = 1 or E2 = 0 or E3 = 1 Rev: 1.03 11/2004 20/24 © 2001, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS840Z18/36AT-180/166/150/100 TQFP Package Drawing (Package T) L Symbol A1 A2 b c D D1 E E1 e L L1 Y θ θ c Pin 1 Description Standoff Body Thickness Lead Width Lead Thickness Terminal Dimension Package Body Terminal Dimension Package Body Lead Pitch Foot Length Lead Length Coplanarity Lead Angle Min. Nom. Max 0.05 1.35 0.20 0.09 21.9 19.9 15.9 13.9 — 0.45 — 0.10 1.40 0.30 — 22.0 20.0 16.0 14.0 0.65 0.60 1.00 0.15 1.45 0.40 0.20 22.1 20.1 16.1 14.1 — 0.75 — 0.10 L1 e b D D1 A1 Y A2 E1 E 0° — 7° Notes: 1. All dimensions are in millimeters (mm). 2. Package width and length do not include mold protrusion. BPR 1999.05.18 Rev: 1.03 11/2004 21/24 © 2001, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS840Z18/36AT-180/166/150/100 Ordering Information—GSI NBT Synchronous SRAMs Org 256K x 18 256K x 18 256K x 18 256K x 18 128K x 36 128K x 36 128K x 36 128K x 36 256K x 18 256K x 18 256K x 18 256K x 18 128K x 36 128K x 36 128K x 36 128K x 36 256K x 18 256K x 18 256K x 18 256K x 18 128K x 36 Part Number1 GS840Z18AT-180 GS840Z18AT-166 GS840Z18AT-150 GS840Z18AT-100 GS840Z36AT-180 GS840Z36AT-166 GS840Z36AT-150 GS840Z36AT-100 GS840Z18AT-180I GS840Z18AT-166I GS840Z18AT-150I GS840Z18AT-100I GS840Z36AT-180I GS840Z36AT-166I GS840Z36AT-150I GS840Z36AT-100I GS840Z18AGT-180 GS840Z18AGT-166 GS840Z18AGT-150 GS840Z18AGT-100 GS840Z36AGT-180 Type NBT Pipeline/Flow Through NBT Pipeline/Flow Through NBT Pipeline/Flow Through NBT Pipeline/Flow Through NBT Pipeline/Flow Through NBT Pipeline/Flow Through NBT Pipeline/Flow Through NBT Pipeline/Flow Through NBT Pipeline/Flow Through NBT Pipeline/Flow Through NBT Pipeline/Flow Through NBT Pipeline/Flow Through NBT Pipeline/Flow Through NBT Pipeline/Flow Through NBT Pipeline/Flow Through NBT Pipeline/Flow Through NBT Pipeline/Flow Through NBT Pipeline/Flow Through NBT Pipeline/Flow Through NBT Pipeline/Flow Through NBT Pipeline/Flow Through Package TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Speed2 (MHz/ns) 180/8 166/8.5 150/10 100/12 180/8 166/8.5 150/10 100/12 180/8 166/8.5 150/10 100/12 180/8 166/8.5 150/10 100/12 180/8 166/8.5 150/10 100/12 180/8 TA3 C C C C C C C C I I I I I I I I C C C C C Status 128K x 36 GS840Z36AGT-166 NBT Pipeline/Flow Through Pb-free TQFP 166/8.5 C Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8Z36A-100IT. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user. 3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range. 4. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings Rev: 1.03 11/2004 22/24 © 2001, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS840Z18/36AT-180/166/150/100 Ordering Information—GSI NBT Synchronous SRAMs Org 128K x 36 128K x 36 256K x 18 256K x 18 256K x 18 256K x 18 128K x 36 128K x 36 128K x 36 Part Number1 GS840Z36AGT-150 GS840Z36AGT-100 GS840Z18AGT-180I GS840Z18AGT-166I GS840Z18AGT-150I GS840Z18AGT-100I GS840Z36AGT-180I GS840Z36AGT-166I GS840Z36AGT-150I Type NBT Pipeline/Flow Through NBT Pipeline/Flow Through NBT Pipeline/Flow Through NBT Pipeline/Flow Through NBT Pipeline/Flow Through NBT Pipeline/Flow Through NBT Pipeline/Flow Through NBT Pipeline/Flow Through NBT Pipeline/Flow Through Package Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Pb-free TQFP Speed2 (MHz/ns) 150/10 100/12 180/8 166/8.5 150/10 100/12 180/8 166/8.5 150/10 TA3 C C I I I I I I I Status 128K x 36 GS840Z36AGT-100I NBT Pipeline/Flow Through Pb-free TQFP 100/12 I Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8Z36A-100IT. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user. 3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range. 4. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings Rev: 1.03 11/2004 23/24 © 2001, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. GS840Z18/36AT-180/166/150/100 4Mb Synchronous NBT Datasheet Revision History DS/DateRev. Code: Old; New 840Z18A_r1 840Z18A_r1; 840Z18A_r1_01 840Z18A_r1_01; 840Z18A_r1_02 840Z18A_r1_02; 840Z18A_r1_03 Content Content Format/Content Types of Changes Page /Revisions/Reason Format or Content • Creation of new datasheet • Updated power numbers in table on page 1 and Operating Currents table • Removed 200 MHz speed bin from entire document • Removed pin locations from pin description table • Updated format • Updated timing diagrams • Added Pb-free information for TQFP Rev: 1.03 11/2004 24/24 © 2001, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.