GS8640E32T-200V

Preliminary GS8640E18/32/36T-xxxV 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline operation • Dual Cycle Deselect (DCD) operation • 1.8 V or 2.5 V core power supply • 1.8 V or 2.5 V I/O supply • LBO pin for Linear or Interleaved Burst mode • Internal input resistors on mode pins allow floating mode pins • Default to Interleaved Pipeline mode • Byte Write (BW) and/or Global Write (GW) operation • Internal self-timed write cycle • Automatic power-down for portable applications • JEDEC-standard 100-lead TQFP package • RoHS-compliant 100-lead TQFP package available 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 250 MHz–167 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O interleave order with the Linear Burst Order (LBO) input. The Burst function need not be used. New addresses can be loaded on every cycle with no degradation of chip performance. Flow Through/Pipeline Reads The function of the Data Output register can be controlled by the user via the FT mode pin (Pin 14). Holding the FT mode pin low places the RAM in Flow Through mode, causing output data to bypass the Data Output Register. Holding FT high places the RAM in Pipeline mode, activating the risingedge-triggered Data Output Register. DCD Pipelined Reads The GS8640E18/32/36T-xxxV is a DCD (Dual Cycle Deselect) pipelined synchronous SRAM. SCD (Single Cycle Deselect) versions are also available. DCD SRAMs pipeline disable commands to the same degree as read commands. DCD RAMs hold the deselect command for one full cycle and then begin turning off their outputs just after the second rising edge of clock. Byte Write and Global Write Byte write operation is performed by using Byte Write enable (BW) input combined with one or more individual byte write signals (Bx). In addition, Global Write (GW) is available for writing all bytes at one time, regardless of the Byte Write control inputs. Sleep Mode Low power (Sleep mode) is attained through the assertion (High) of the ZZ signal, or by stopping the clock (CK). Memory data is retained during Sleep mode. Core and Interface Voltages The GS8640E18/32/36T-xxxV operates on a 1.8 V or 2.5 V power supply. All inputs are 1.8 V or 2.5 V compatible. Separate output power (VDDQ) pins are used to decouple output noise from the internal circuits and are 1.8 V or 2.5 V compatible. Functional Description Applications The GS8640E18/32/36T-xxxV is a 75,497,472-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to networking chip set support. Controls Addresses, data I/Os, chip enables (E1, E2, E3), address burst control inputs (ADSP, ADSC, ADV), and write control inputs (Bx, BW, GW) are synchronous and are controlled by a positive-edge-triggered clock input (CK). Output enable (G) and power down control (ZZ) are asynchronous inputs. Burst cycles can be initiated with either ADSP or ADSC inputs. In Burst mode, subsequent burst addresses are generated internally and are controlled by ADV. The burst address counter may be configured to count in either linear or Parameter Synopsis -250 Pipeline 3-1-1-1 tKQ tCycle Curr (x18) Curr (x32/x36) tKQ tCycle Curr (x18) Curr (x32/x36) 3.0 4.0 340 410 6.5 6.5 245 280 -200 3.0 5.0 290 350 7.5 7.5 220 250 -167 3.5 6.0 260 305 8.0 8.0 210 240 Unit ns ns mA mA ns ns mA mA Flow Through 2-1-1-1 Rev: 1.01 6/2006 1/23 © 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8640E18/32/36T-xxxV GS8640E18T-xxxV 100-Pin TQFP Pinout (Package T) VDDQ VSS NC NC DQ B DQB VSS VDDQ DQ B DQB FT VDD NC VSS DQ B DQB VDDQ VSS DQ B DQB DQPB NC VSS VDDQ NC NC NC NC NC NC 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 80 2 79 3 78 4 77 5 76 6 75 7 74 8 73 9 72 4M x 18 10 71 Top View 11 70 12 69 13 68 14 67 15 66 16 65 17 64 18 63 19 62 20 61 21 60 22 59 23 58 24 57 25 56 26 55 27 54 28 53 29 52 30 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 A A E1 E2 NC NC BB BA E3 VDD VSS CK GW BW G ADSC ADSP ADV A A A NC NC VDDQ VSS NC DQPA DQA DQA VSS VDDQ DQA DQA VSS NC VDD ZZ DQA DQA VDDQ VSS DQA DQA NC NC VSS VDDQ NC NC NC Rev: 1.01 6/2006 LBO A A A A A1 A0 A A VSS VDD A A A A A A A A A 2/23 © 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8640E18/32/36T-xxxV GS8640E32T-xxxV 100-Pin TQFP Pinout (Package T) NC DQC DQC VDDQ VSS DQC DQC DQ C DQC VSS VDDQ DQ C DQC FT VDD NC VSS DQ D DQD VDDQ VSS DQ D DQD DQD DQD VSS VDDQ DQD DQD NC 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 80 2 79 3 78 4 77 5 76 6 75 7 74 8 73 9 72 2M x 32 10 71 Top View 11 70 12 69 13 68 14 67 15 66 16 65 17 64 18 63 19 62 20 61 21 60 22 59 23 58 24 57 25 56 26 55 27 54 28 53 29 52 30 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 A A E1 E2 BD BC BB BA E3 VDD VSS CK GW BW G ADSC ADSP ADV A A NC DQB DQB VDDQ VSS DQB DQB DQB DQB VSS VDDQ DQB DQB VSS NC VDD ZZ DQA DQA VDDQ VSS DQA DQA DQA DQA VSS VDDQ DQA DQA NC Rev: 1.01 6/2006 LBO A A A A A1 A0 A A VSS VDD A A A A A A A A A 3/23 © 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8640E18/32/36T-xxxV GS8640E36-xxxV 100-Pin TQFP Pinout (Package T) DQPC DQC DQC VDDQ VSS DQC DQC DQ C DQC3 VSS VDDQ DQ C DQC FT VDD NC VSS DQ D DQD VDDQ VSS DQ D DQD DQD DQD VSS VDDQ DQD DQD DQPD 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 1 80 2 79 3 78 4 77 5 76 6 75 7 74 8 73 9 72 2M x 36 10 71 Top View 11 70 12 69 13 68 14 67 15 66 16 65 17 64 18 63 19 62 20 61 21 60 22 59 23 58 24 57 25 56 26 55 27 54 28 53 29 52 30 51 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 A A E1 E2 BD BC BB BA E3 VDD VSS CK GW BW G ADSC ADSP ADV A A DQPB DQB DQB VDDQ VSS DQB DQB DQB DQB VSS VDDQ DQB DQB VSS NC VDD ZZ DQA DQA VDDQ VSS DQA DQA DQA DQA VSS VDDQ DQA DQA DQPA Rev: 1.01 6/2006 LBO A A A A A1 A0 A A VSS VDD A A A A A A A A A 4/23 © 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8640E18/32/36T-xxxV TQFP Pin Description Symbol A 0, A 1 A DQA DQB DQC DQD NC BW BA , BB BC , BD CK GW E 1, E 3 E2 G ADV ADSP, ADSC ZZ FT LBO VDD VSS VDDQ I I I I I I I I I I I I I I I I Type I I Description Address field LSBs and Address Counter preset Inputs Address Inputs I/O Data Input and Output pins No Connect Byte Write—Writes all enabled bytes; active low Byte Write Enable for DQA, DQB Data I/Os; active low Byte Write Enable for DQC, DQD Data I/Os; active low Clock Input Signal; active high Global Write Enable—Writes all bytes; active low Chip Enable; active low Chip Enable; active high Output Enable; active low Burst address counter advance enable; active low Address Strobe (Processor, Cache Controller); active low Sleep Mode control; active high Flow Through or Pipeline mode; active low Linear Burst Order mode; active low Core power supply I/O and Core Ground Output driver power supply Rev: 1.01 6/2006 5/23 © 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8640E18/32/36T-xxxV GS8640E18/32/36-xxxV Block Diagram A0–An Register D Q A0 D0 A1 Q0 D1 Q1 Counter Load A0 A1 A LBO ADV CK ADSC ADSP GW BW BA Register Memory Array Q D Q D Register D BB Q 36 4 36 Register D BC Q Q Register D Register Q Register D D BD Q Register D Q E1 E2 E3 Register D Q Register D Q FT G Power Down Control ZZ DCD=1 DQx1–DQx9 Note: Only x36 version shown for simplicity. Rev: 1.01 6/2006 6/23 © 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8640E18/32/36T-xxxV Mode Pin Functions Mode Name Burst Order Control Output Register Control Power Down Control Pin Name LBO FT ZZ State L H L H or NC L or NC H Function Linear Burst Interleaved Burst Flow Through Pipeline Active Standby, IDD = ISB Note: There is a pull-up device on the FT pin and a pull-down device on the ZZ pin, so this input pin can be unconnected and the chip will operate in the default states as specified in the above table. Burst Counter Sequences Linear Burst Sequence A[1:0] A[1:0] A[1:0] A[1:0] 1st address 2nd address 3rd address 4th address 00 01 10 11 01 10 11 00 10 11 00 01 11 00 01 10 Interleaved Burst Sequence A[1:0] A[1:0] A[1:0] A[1:0] 1st address 2nd address 3rd address 4th address 00 01 10 11 01 00 11 10 10 11 00 01 11 10 01 00 Note: The burst counter wraps to initial state on the 5th clock. Note: The burst counter wraps to initial state on the 5th clock. BPR 1999.05.18 Rev: 1.01 6/2006 7/23 © 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8640E18/32/36T-xxxV Byte Write Truth Table Function Read Read Write byte a Write byte b Write byte c Write byte d Write all bytes GW H H H H H H H BW H L L L L L L BA X H L H H H L BB X H H L H H L BC X H H H L H L BD X H H H H L L Notes 1 1 2, 3 2, 3 2, 3, 4 2, 3, 4 2, 3, 4 Write all bytes L X X X X X Notes: 1. All byte outputs are active in read cycles regardless of the state of Byte Write Enable inputs. 2. Byte Write Enable inputs BA, BB, BC and/or BD may be used in any combination with BW to write single or multiple bytes. 3. All byte I/Os remain High-Z during all write operations regardless of the state of Byte Write Enable inputs. 4. Bytes “C” and “D” are only available on the x32 and x36 versions. Rev: 1.01 6/2006 8/23 © 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8640E18/32/36T-xxxV Synchronous Truth Table Operation Deselect Cycle, Power Down Deselect Cycle, Power Down Deselect Cycle, Power Down Read Cycle, Begin Burst Read Cycle, Begin Burst Write Cycle, Begin Burst Read Cycle, Continue Burst Read Cycle, Continue Burst Write Cycle, Continue Burst Write Cycle, Continue Burst Read Cycle, Suspend Burst Read Cycle, Suspend Burst Write Cycle, Suspend Burst Write Cycle, Suspend Burst Address Used None None None External External External Next Next Next Next Current Current Current Current State Diagram Key5 X X X R R W CR CR CW CW E1 H L L L L L X H X H X H X H E2 X F F T T T X X X X X X X X ADSP ADSC X L H L H H H X H X H X H X L X L X L L H H H H H H H H ADV X X X X X X L L L L H H H H W3 X X X X F T F F T T F F T T DQ4 High-Z High-Z High-Z Q Q D Q Q D D Q Q D D Notes: 1. X = Don’t Care, H = High, L = Low 2. E = T (True) if E2 = 1 and E3 = 0; E = F (False) if E2 = 0 or E3 = 1 3. W = T (True) and F (False) is defined in the Byte Write Truth Table preceding. 4. G is an asynchronous input. G can be driven high at any time to disable active output drivers. G low can only enable active drivers (shown as “Q” in the Truth Table above). 5. All input combinations shown above are tested and supported. Input combinations shown in gray boxes need not be used to accomplish basic synchronous or synchronous burst operations and may be avoided for simplicity. 6. Tying ADSP high and ADSC low allows simple non-burst synchronous operations. See BOLD items above. 7. Tying ADSP high and ADV low while using ADSC to load new addresses allows simple burst operations. See ITALIC items above. Rev: 1.01 6/2006 9/23 © 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8640E18/32/36T-xxxV Simplified State Diagram X Deselect W W Simple Synchronous Operation R R X CW First Write R CR First Read X CR Simple Burst Synchronous Operation W R X Burst Write CR CW R Burst Read X CR Notes: 1. The diagram shows only supported (tested) synchronous state transitions. The diagram presumes G is tied low. 2. The upper portion of the diagram assumes active use of only the Enable (E1) and Write (BA, BB, BC, BD, BW, and GW) control inputs, and that ADSP is tied high and ADSC is tied low. 3. The upper and lower portions of the diagram together assume active use of only the Enable, Write, and ADSC control inputs, and assumes ADSP is tied high and ADV is tied low. Rev: 1.01 6/2006 10/23 © 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8640E18/32/36T-xxxV Simplified State Diagram with G X Deselect W W X W CW R R First Write R CR First Read X CR CW W X Burst Write R CR W CW R X Burst Read CW CR Notes: 1. The diagram shows supported (tested) synchronous state transitions plus supported transitions that depend upon the use of G. 2. Use of “Dummy Reads” (Read Cycles with G High) may be used to make the transition from Read cycles to Write cycles without passing through a Deselect cycle. Dummy Read cycles increment the address counter just like normal read cycles. 3. Transitions shown in gray tone assume G has been pulsed high long enough to turn the RAM’s drivers off and for incoming data to meet Data Input Set Up Time. Rev: 1.01 6/2006 11/23 © 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8640E18/32/36T-xxxV Absolute Maximum Ratings (All voltages reference to VSS) Symbol VDD VDDQ VI/O VIN IIN IOUT PD TSTG TBIAS Description Voltage on VDD Pins Voltage on VDDQ Pins Voltage on I/O Pins Voltage on Other Input Pins Input Current on Any Pin Output Current on Any I/O Pin Package Power Dissipation Storage Temperature Temperature Under Bias Value –0.5 to 4.6 –0.5 to VDD –0.5 to VDDQ +0.5 (≤ 4.6 V max.) –0.5 to VDD +0.5 (≤ 4.6 V max.) +/–20 +/–20 1.5 –55 to 125 –55 to 125 Unit V V V V mA mA W oC oC Note: Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended Operating Conditions. Exposure to conditions exceeding the Absolute Maximum Ratings, for an extended period of time, may affect reliability of this component. Power Supply Voltage Ranges (1.8 V/2.5 V Version) Parameter 1.8 V Supply Voltage 2.5 V Supply Voltage 1.8 V VDDQ I/O Supply Voltage 2.5 V VDDQ I/O Supply Voltage Symbol VDD1 VDD2 VDDQ1 VDDQ2 Min. 1.7 2.3 1.7 2.3 Typ. 1.8 2.5 1.8 2.5 Max. 2.0 2.7 VDD VDD Unit V V V V Notes Notes: 1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. Rev: 1.01 6/2006 12/23 © 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8640E18/32/36T-xxxV VDDQ2 & VDDQ1 Range Logic Levels Parameter VDD Input High Voltage VDD Input Low Voltage Symbol VIH VIL Min. 0.6*VDD –0.3 Typ. — — Max. VDD + 0.3 0.3*VDD Unit V V Notes 1 1 Notes: 1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. Recommended Operating Temperatures Parameter Ambient Temperature (Commercial Range Versions) Ambient Temperature (Industrial Range Versions) Symbol TA TA Min. 0 –40 Typ. 25 25 Max. 70 85 Unit °C °C Notes 2 2 Notes: 1. The part numbers of Industrial Temperature Range versions end the character “I”. Unless otherwise noted, all performance specifications quoted are evaluated for worst case in the temperature range marked on the device. 2. Input Under/overshoot voltage must be –2 V > Vi < VDDn+2 V not to exceed 4.6 V maximum, with a pulse width not to exceed 20% tKC. Undershoot Measurement and Timing VIH Overshoot Measurement and Timing 20% tKC VDD + 2.0 V VSS 50% VSS – 2.0 V 20% tKC 50% VDD VIL Capacitance (TA = 25oC, f = 1 MHZ, VDD = 2.5 V) Parameter Input Capacitance Input/Output Capacitance Note: These parameters are sample tested. Symbol CIN CI/O Test conditions VIN = 0 V VOUT = 0 V Typ. 4 6 Max. 5 7 Unit pF pF Rev: 1.01 6/2006 13/23 © 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8640E18/32/36T-xxxV AC Test Conditions Parameter Input high level Input low level Input slew rate Input reference level Output reference level Output load Conditions VDD – 0.2 V 0.2 V 1 V/ns VDD/2 VDDQ/2 Fig. 1 VDDQ/2 * Distributed Test Jig Capacitance Figure 1 Output Load 1 DQ 50Ω 30pF* Notes: 1. Include scope and jig capacitance. 2. Test conditions as specified with output loading as shown in Fig. 1 unless otherwise noted. 3. Device is deselected as defined by the Truth Table. DC Electrical Characteristics Parameter Input Leakage Current (except mode pins) FT, ZZ Input Current Output Leakage Current Symbol IIL IIN IOL Test Conditions VIN = 0 to VDD VDD ≥ VIN ≥ 0 V Output Disable, VOUT = 0 to VDD Min –1 uA –100 uA –1 uA Max 1 uA 100 uA 1 uA DC Output Characteristics (1.8 V/2.5 V Version) Parameter 1.8 V Output High Voltage 2.5 V Output High Voltage 1.8 V Output Low Voltage 2.5 V Output Low Voltage Symbol VOH1 VOH2 VOL1 VOL2 Test Conditions IOH = –4 mA, VDDQ = 1.6 V IOH = –8 mA, VDDQ = 2.375 V IOL = 4 mA IOL = 8 mA Min VDDQ – 0.4 V 1.7 V — — Max — — 0.4 V 0.4 V Rev: 1.01 6/2006 14/23 © 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8640E18/32/36T-xxxV Operating Currents -250 Parameter Test Conditions Mode Symbol IDD IDDQ IDD IDDQ IDD IDDQ IDD IDDQ ISB ISB IDD IDD 0 to 70°C 360 50 255 25 315 25 230 15 100 100 140 125 –40 to 85°C 380 50 275 25 335 25 250 15 120 120 155 140 -200 0 to 70°C 310 40 230 20 270 20 205 15 100 100 130 120 –40 to 85°C 330 40 250 20 290 20 225 15 120 120 146 135 -167 0 to 70°C 270 35 220 20 240 20 195 15 100 100 125 120 –40 to 85°C 290 35 240 20 260 20 215 15 120 120 140 135 Unit Operating Current Device Selected; All other inputs ≥VIH or ≤ VIL Output open (x32/ x36) Pipeline Flow Through Pipeline mA mA mA mA mA mA mA mA (x18) Flow Through Pipeline Flow Through Pipeline Flow Through Standby Current Deselect Current ZZ ≥ VDD – 0.2 V Device Deselected; All other inputs ≥ VIH or ≤ VIL — — Notes: 1. IDD and IDDQ apply to any combination of VDD and VDDQ operation. 2. All parameters listed are worst case scenario. Rev: 1.01 6/2006 15/23 © 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8640E18/32/36T-xxxV AC Electrical Characteristics Parameter Clock Cycle Time Clock to Output Valid Pipeline Clock to Output Invalid Clock to Output in Low-Z Setup time Hold time Clock Cycle Time Clock to Output Valid Flow Through Clock to Output Invalid Clock to Output in Low-Z Setup time Hold time Clock HIGH Time Clock LOW Time Clock to Output in High-Z G to Output Valid G to output in Low-Z G to output in High-Z ZZ setup time ZZ hold time ZZ recovery Symbol tKC tKQ tKQX tLZ1 tS tH tKC tKQ tKQX tLZ1 tS tH tKH tKL tHZ1 tOE tOLZ1 tOHZ1 tZZS2 tZZH2 tZZR -250 Min 4.0 — 1.5 1.5 1.5 0.2 6.5 — 3.0 3.0 1.5 0.5 1.3 1.7 1.5 — 0 — 5 1 20 Max — 3.0 — — — — — 6.5 — — — — — — 2.5 2.5 — 2.5 — — — Min 5.0 — 1.5 1.5 1.5 0.4 7.5 — 3.0 3.0 1.5 0.5 1.3 1.7 1.5 — 0 — 5 1 20 -200 Max — 3.0 — — — — — 7.5 — — — — — — 3.0 3.0 — 3.0 — — — Min 6.0 — 1.5 1.5 1.5 0.5 8.0 — 3.0 3.0 1.5 0.5 1.3 1.7 1.5 — 0 — 5 1 20 -167 Max — 3.5 — — — — — 8.0 — — — — — — 3.0 3.5 — 3.0 — — — Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns Notes: 1. These parameters are sampled and are not 100% tested. 2. ZZ is an asynchronous signal. However, in order to be recognized on any given clock cycle, ZZ must meet the specified setup and hold times as specified above. Rev: 1.01 6/2006 16/23 © 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8640E18/32/36T-xxxV Pipeline Mode Timing (DCD) Begin Read A Cont Deselect Deselect Write B tKL tKH tKC Read C Read C+1 Read C+2 Read C+3 Cont Deselect Deselect CK ADSP tS tH ADSC tS ADV tS tH Ao–An A B C ADSC initiated read tH tS GW tS BW tH tS Ba–Bd tS tH E1 tS tH E2 tS tH E3 G tS tOE DQa–DQd Hi-Z E2 and E3 only sampled with ADSC Deselected with E1 tH tKQ tH tLZ Q(C) Q(C+1) Q(C+2) Q(C+3) tHZ tKQX tOHZ Q(A) D(B) Rev: 1.01 6/2006 17/23 © 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8640E18/32/36T-xxxV Flow Through Mode Timing (DCD) Begin Read A Cont tKL tKH Deselect Write B tKC Read C Read C+1 Read C+2 Read C+3 Read C Deselect CK ADSP tS tH ADSC tH tS ADV tS tH Ao–An A B C Fixed High tS tH ADSC initiated read tS tH tS tH GW tS tH BW tH tS Ba–Bd tS tH E1 tS tH E2 tS tH E3 G tOE tKQ DQa–DQd Q(A) E1 masks ADSP Deselected with E1 E2 and E3 only sampled with ADSP and ADSC E1 masks ADSP tH tS tOHZ D(B) tLZ Q(C) Q(C+1) Q(C+2) Q(C+3) Q(C) tKQX tHZ Rev: 1.01 6/2006 18/23 © 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8640E18/32/36T-xxxV Sleep Mode During normal operation, ZZ must be pulled low, either by the user or by its internal pull down resistor. When ZZ is pulled high, the SRAM will enter a Power Sleep mode after 2 cycles. At this time, internal state of the SRAM is preserved. When ZZ returns to low, the SRAM operates normally after 2 cycles of wake up time. Sleep mode is a low current, power-down mode in which the device is deselected and current is reduced to ISB2. The duration of Sleep mode is dictated by the length of time the ZZ is in a High state. After entering Sleep mode, all inputs except ZZ become disabled and all outputs go to High-Z The ZZ pin is an asynchronous, active high input that causes the device to enter Sleep mode. When the ZZ pin is driven high, ISB2 is guaranteed after the time tZZI is met. Because ZZ is an asynchronous input, pending operations or operations in progress may not be properly completed if ZZ is asserted. Therefore, Sleep mode must not be initiated until valid pending operations are completed. Similarly, when exiting Sleep mode during tZZR, only a Deselect or Read commands may be applied while the SRAM is recovering from Sleep mode. Sleep Mode Timing Diagram tKH tKC CK Setup Hold ADSP ADSC tZZR tZZS ZZ tZZH tKL Rev: 1.01 6/2006 19/23 © 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8640E18/32/36T-xxxV TQFP Package Drawing (Package T) L Symbol A1 A2 b c D D1 E E1 e L L1 Y θ θ c Pin 1 Description Standoff Body Thickness Lead Width Lead Thickness Terminal Dimension Package Body Terminal Dimension Package Body Lead Pitch Foot Length Lead Length Coplanarity Lead Angle Min. Nom. Max 0.05 1.35 0.20 0.09 21.9 19.9 15.9 13.9 — 0.45 — 0.10 1.40 0.30 — 22.0 20.0 16.0 14.0 0.65 0.60 1.00 0.15 1.45 0.40 0.20 22.1 20.1 16.1 14.1 — 0.75 — 0.10 L1 e b D D1 A1 Y A2 E1 E 0° — 7° Notes: 1. All dimensions are in millimeters (mm). 2. Package width and length do not include mold protrusion. Rev: 1.01 6/2006 20/23 © 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8640E18/32/36T-xxxV Ordering Information for GSI Synchronous Burst RAMs Org 4M x 18 4M x 18 4M x 18 2M x 32 2M x 32 2M x 32 2M x 36 2M x 36 2M x 36 4M x 18 4M x 18 4M x 18 2M x 32 2M x 32 2M x 32 2M x 36 2M x 36 2M x 36 4M x 18 4M x 18 4M x 18 2M x 32 2M x 32 2M x 32 2M x 36 2M x 36 2M x 36 4M x 18 Part Number1 GS8640E18T-250V GS8640E18T-200V GS8640E18T-167V GS8640E32T-250V GS8640E32T-200V GS8640E32T-167V GS8640E36T-250V GS8640E36T-200V GS8640E36T-167V GS8640E18T-250IV GS8640E18T-200IV GS8640E18T-167IV GS8640E32T-250IV GS8640E32T-200IV GS8640E32T-167IV GS8640E36T-250IV GS8640E36T-200IV GS8640E36T-167IV GS8640E18GT-250V GS8640E18GT-200V GS8640E18GT-167V GS8640E32GT-250V GS8640E32GT-200V GS8640E32GT-167V GS8640E36GT-250V GS8640E36GT-200V GS8640E36GT-167V GS8640E18GT-250IV Type DCD Synchronous Burst DCD Synchronous Burst DCD Synchronous Burst DCD Synchronous Burst DCD Synchronous Burst DCD Synchronous Burst DCD Synchronous Burst DCD Synchronous Burst DCD Synchronous Burst DCD Synchronous Burst DCD Synchronous Burst DCD Synchronous Burst DCD Synchronous Burst DCD Synchronous Burst DCD Synchronous Burst DCD Synchronous Burst DCD Synchronous Burst DCD Synchronous Burst DCD Synchronous Burst DCD Synchronous Burst DCD Synchronous Burst DCD Synchronous Burst DCD Synchronous Burst DCD Synchronous Burst DCD Synchronous Burst DCD Synchronous Burst DCD Synchronous Burst DCD Synchronous Burst Voltage Option 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V Package TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP TQFP RoHS-compliant TQFP RoHS-compliant TQFP RoHS-compliant TQFP RoHS-compliant TQFP RoHS-compliant TQFP RoHS-compliant TQFP RoHS-compliant TQFP RoHS-compliant TQFP RoHS-compliant TQFP RoHS-compliant TQFP Speed2 T 3 Status4 (MHz/ns) A 250/6.5 200/7.5 167/8 250/6.5 200/7.5 167/8 250/6.5 200/7.5 167/8 250/6.5 200/7.5 167/8 250/6.5 200/7.5 167/8 250/6.5 200/7.5 167/8 250/6.5 200/7.5 167/8 250/6.5 200/7.5 167/8 250/6.5 200/7.5 167/8 250/6.5 C C C C C C C C C I I I I I I I I I C C C C C C C C C I PQ PQ PQ PQ PQ PQ PQ PQ PQ PQ PQ PQ PQ PQ PQ PQ PQ PQ PQ PQ PQ PQ PQ PQ PQ PQ PQ PQ 4M x 18 GS8640E18GT-200IV DCD Synchronous Burst 1.8 V or 2.5 V RoHS-compliant TQFP 200/7.5 I PQ Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8640E18T-300IVT. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user. 3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range. 4. PQ = Pre-Qualification. 5. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings. Rev: 1.01 6/2006 21/23 © 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8640E18/32/36T-xxxV Ordering Information for GSI Synchronous Burst RAMs (Continued) Org 4M x 18 2M x 32 2M x 32 2M x 32 2M x 36 2M x 36 Part Number1 GS8640E18GT-167IV GS8640E32GT-250IV GS8640E32GT-200IV GS8640E32GT-167IV GS8640E36GT-250IV GS8640E36GT-200IV Type DCD Synchronous Burst DCD Synchronous Burst DCD Synchronous Burst DCD Synchronous Burst DCD Synchronous Burst DCD Synchronous Burst Voltage Option 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V 1.8 V or 2.5 V Package RoHS-compliant TQFP RoHS-compliant TQFP RoHS-compliant TQFP RoHS-compliant TQFP RoHS-compliant TQFP RoHS-compliant TQFP Speed2 T 3 Status4 (MHz/ns) A 167/8 250/6.5 200/7.5 167/8 250/6.5 200/7.5 I I I I I I PQ PQ PQ PQ PQ PQ 2M x 36 GS8640E36GT-167IV DCD Synchronous Burst 1.8 V or 2.5 V RoHS-compliant TQFP 167/8 I PQ Notes: 1. Customers requiring delivery in Tape and Reel should add the character “T” to the end of the part number. Example: GS8640E18T-300IVT. 2. The speed column indicates the cycle frequency (MHz) of the device in Pipeline mode and the latency (ns) in Flow Through mode. Each device is Pipeline/Flow Through mode-selectable by the user. 3. TA = C = Commercial Temperature Range. TA = I = Industrial Temperature Range. 4. PQ = Pre-Qualification. 5. GSI offers other versions this type of device in many different configurations and with a variety of different features, only some of which are covered in this data sheet. See the GSI Technology web site (www.gsitechnology.com) for a complete listing of current offerings. Rev: 1.01 6/2006 22/23 © 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com. Preliminary GS8640E18/32/36T-xxxV 72Mb Sync SRAM Datasheet Revision History DS/DateRev. Code: Old; New 8640EVxx_r1 8640EVxx_r1; 8640Exx_V_r_01 Content Types of Changes Format or Content Page;Revisions;Reason • Creation of new datasheet • Updated entire document to reflect new part nomenclature • Removed 300 MHz speed bin Rev: 1.01 6/2006 23/23 © 2004, GSI Technology Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.