2SK3018

桂林斯壯微電子有限責任公司 Guilin Strong Micro-Electronics Co.,Ltd. 2SK3018 SOT-23 場效應晶體管(SOT-23 Field Effect Transistors) N-Channel Enhancement-Mode MOS FETs N 沟道增强型 MOS 场效应管 ■MAXIMUM RATINGS 最大額定值 Symbol 符號 BVDSS VGS IDR IDRM Max 最大值 35 +20 100 400 Unit 單位 V V mA mA Characteristic 特性參數 Drain-Source Voltage 漏極-源極電壓 Gate- Source Voltage 栅極-源極電壓 Drain Current (continuous) 漏極電流-連續 Drain Current (pulsed) 漏極電流-脉冲 ■THERMAL CHARACTERISTICS 熱特性 Characteristic 特性 Total Device Dissipation 總耗散功率 TA=25℃環境溫度爲 25℃ Derate above25℃ 超過 25℃遞減 Thermal Resistance Junction to Ambient 熱阻 Junction and Storage Temperature 結溫和儲存溫度 Symbol 符號 PD Max 最大值 200 1.8 Unit 單位 mW mW/℃ ℃/W RΘJA TJ,Tstg 417 150℃,-55to+150℃ 桂林斯壯微電子有限責任公司 Guilin Strong Micro-Electronics Co.,Ltd. 2SK3018 ■DEVICE MARKING 打標 2SK3018=KN ■ELECTRICAL CHARACTERISTICS 電特性 (TA=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃) Characteristic 特性參數 Drain-Source Breakdown Voltage 漏極-源極擊穿電壓(ID =10uA ,VGS=0V) Gate Threshold Voltage 栅極開启電壓(ID =100uA ,VGS= VDS) Drain-Source On Voltage 漏極-源極導通電壓(ID=50mA ,VGS=5V) (ID =400mA ,VGS=10V) Diode Forward Voltage Drop 内附二極管正向壓降(ISD=200mA ,VGS=0V) Zero Gate Voltage Drain Current 零栅壓漏極電流(VGS=0V, VDS= BVDSS) (VGS=0V, VDS=0.8BVDSS, TA=125℃) Gate Body Leakage 栅極漏電流(VGS=+20V, VDS=0V) Static Drain-Source On-State Resistance 静态漏源導通電阻(ID=50mA ,VGS=4.5V) (ID=400mA ,VGS=10V) Input Capacitance 輸入電容 (VGS=0V, VDS=25V,f=1MHz) Common Source Output Capacitance 共源輸出電容(VGS=0V, VDS=25V,f=1MHz) Turn-ON Time 开启時間 (VDS=30V, ID=200mA, RGEN=25Ω) Turn-OFF Time 关断時間 (VDS=30V, ID=200mA, RGEN=25Ω) Reverse Recovery Time 反向恢复時間 (ISD=800mA, VGS=0V) 1. FR-5=1.0×0.75×0.062in. 2. Alumina=0.4×0.3×0.024in.99.5%alumina. 3. Pulse Width