GM2301

桂斯微子限任司 林壯電有責公 Guilin GM2301 SOT-23 場效應晶體管(SOT-23Field Effect Transistors) Strong Micro-Electronics Co.,Ltd. P-Channel Enhancement-Mode MOS FETs P 沟道增强型 MOS 场效应管 ■MAXIMUM RATINGS 最大額定值 Symbol 符號 BVDSS VGS ID IDM Max 最大值 -20 +10 -2.8 -10 Unit 單位 V V A A Characteristic 特性參數 Drain-Source V oltage 漏極-源極電壓 Gate- Source V oltage 栅極-源極電壓 Drain Current (continuous) 漏極電流-連續 Drain Current (pulsed) 漏極電流-脉冲 TotalDevice Dissipation 總耗散功率 TA=25℃環境溫度爲 25℃ Junction 結溫 Storage Temperature 儲存溫度 PD 550 mW TJ Tstg 150 -55to+150 ℃ ℃ ■DEVICE MARKING 打標 GM 2301 =A1 桂斯微子限任司 林壯電有責公 Guilin GM2301 ■ELECTRICAL Strong Micro-Electronics Co.,Ltd. CHARACTERISTICS 電特性 (TA=25℃ unless otherwise noted 如無特殊說明，溫度爲 25℃) Characteristic 特性參數 Drain-Source Breakdown V oltage 漏極-源極擊穿電壓(ID = -250uA,VGS=0V) Gate Threshold V oltage 栅極開启電壓(ID = -250uA,VGS= VDS) Diode Forward V oltageDrop 内附二極管正向壓降(IS= -0.75A,VGS=0V) Zero Gate V oltageDrain Current 零栅壓漏極電流(VGS=0V, VDS= -16V) (VGS=0V, VDS= -16V, TA=55℃) Gate Body Leakage 栅極漏電流(VGS=+10V, VDS=0V) Static Drain-Source On-State Resistance 静态漏源導通電阻(ID= -2.8A,VGS= -4.5V) Static Drain-Source On-State Resistance 静态漏源導通電阻(ID= -2A,VGS= -2.5V) Input Capacitance 輸入電容 (VGS=0V, VDS= -10V,f=1MHz) Output Capacitance 輸出電容 (VGS=0V, VDS= -10V,f=1MHz) Turn-ON Time 开启時間 (VDS= -10V, ID= -2.8A, RGEN=6Ω) Turn-OFF Time 关断時間 (VDS= -10V, ID= -2.8A, RGEN=6Ω) Pulse Width