G138

Pb Free Plating Product ISSUED DATE :2006/03/01 REVISED DATE : G138 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 50V 3.5 500mA The G138 has been designed to minimize on-state resistance, while provide rugged, reliable and fast switching performance. The G138 is universally used for all commercial-industrial surface mount applications. Description Features *Simple Drive Requirement *Small Package Outline Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@10V 3 Continuous Drain Current , VGS@10V 1,2 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @TA=25 : Tj, Tstg Symbol Rthj-a Ratings 50 ±20 500 400 800 225 0.002 -55 ~ +150 Value 556 Unit V V mA mA mA mW W/ : : Unit : /W Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max. 1/4 ISSUED DATE :2006/03/01 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) unless otherwise specified) Min. 50 0.5 Typ. 500 Max. 2.0 D 100 1 3.5 6.0 50 25 5 pF Unit V V mS nA uA Ł Test Conditions VGS=0, ID=250uA VDS=VGS, ID=1mA VDS=10V, ID=220mA 20V VGS= D VDS=50V, VGS=0 VGS=10V, ID=220mA VGS=4.5V, ID=220mA VGS=0V VDS=25V f=1.0MHz Symbol BVDSS VGS(th) gfs IGSS IDSS RDS(ON) Ciss Coss Crss Symbol VSD Static Drain-Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Parameter Forward On Voltage2 Min. Typ. Max. 1.5 Unit V Test Conditions IS=100mA, VGS=0V Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270 : /W when mounted on Min. copper pad. 2/4 ISSUED DATE :2006/03/01 REVISED DATE : Characteristics Curve 3/4 ISSUED DATE :2006/03/01 REVISED DATE : Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 4/4