Pb Free Plating Product
ISSUED DATE :2004/07/06 REVISED DATE :2005/03/14B
G2302
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 85m 3.2A
The G2302 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness.
Description
*Capable of 2.5V gate drive *Small Package Outline
Features
Package Dimensions
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 10 C 0C
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS@4.5V Continuous Drain Current3, VGS@4.5V Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol VDS VGS ID @TA =25 : ID @TA =70 : IDM PD @TA =25 : Tj, Tstg Symbol Rthj-a
Ratings 20 f 12 3.2 2.6 10 1.38 0.01 -55 ~ +150 Ratings 90
Unit V V A A A W W/
Thermal Data
Parameter 3 Thermal Resistance Junction-ambient Max. Unit /W
1/4
ISSUED DATE :2004/07/06 REVISED DATE :2005/03/14B
Electrical Characteristics(Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Unless otherwise specified)
Min. 20 0.5 Typ. 0.1 6 4.4 0.6 1.9 5.2 37 15 5.7 145 100 50 Max. 1.2 D 100 1 10 85 115 pF ns nC Unit V V/ : V S nA uA uA mŁ Test Conditions VGS=0, ID=250uA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=5V, ID=3.6A 12V VGS= D VDS=20V, VGS=0 VDS=20V, VGS=0 VGS=4.5V, ID=3.6A VGS=2.5V, ID=3.1A ID=3.6A VDS=10V VGS=4.5V VDS=10V ID=3.6A VGS=5V RG=6 Ł RD=2.8 Ł VGS=0V VDS=10V f=1.0MHz
Symbol BVDSS
BVDSS / Tj
Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=70 : )
VGS(th) gfs IGSS IDSS
Static Drain-Source On-Resistance2 Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time2 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
Source-Drain Diode
Parameter Forward On Voltage
2
Symbol VSD IS ISM
1
Min. -
Typ. -
Max. 1.2 1 10
Unit V A A
Test Conditions IS=1.6A, VGS=0V VD= VG=0V, VS=1.2V
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)
Notes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board;270 : /W when mounted on min. copper pad.
2/4
ISSUED DATE :2004/07/06 REVISED DATE :2005/03/14B
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance v.s. Junction Temperature
Fig 5. Forward Characteristics of Reverse Diode
Fig 6. Gate Threshold Voltage v.s. Junction Temperature
3/4
ISSUED DATE :2004/07/06 REVISED DATE :2005/03/14B
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165
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