G2303

Pb Free Plating Product CORPORATION G2303 P-CHANNEL ENHANCEMENT MODE POWER MOSFET ISSUED DATE :2004/10/12 REVISED DATE :2005/03/22B BVDSS RDS(ON) ID -30V 240m -1.9A The G2303 provides the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. Description Features & Super High Dense Cell Design for Extremely Low RDS(ON) Applications & Power Management in Notebook Computer &Portable Equipment &Battery Powered System. &Reliable and Rugged Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0C 10 C Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current 3 Continuous Drain Current Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 : ID @TA=70 : IDM PD @TA=25 : Tj, Tstg Symbol Rthj-a Ratings -30 f 20 -1.9 -1.5 -10 1.38 0.01 -55 ~ +150 Ratings 90 Unit V V A A A W W/ Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max. Unit /W 1/4 CORPORATION Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ISSUED DATE :2004/10/12 REVISED DATE :2005/03/22B Unless otherwise specified) Min. -30 -1.0 Typ. -0.1 2 6.2 1.4 0.3 7.6 8.2 17.5 9 230 130.4 40 Max. D 100 -1 -10 240 460 pF ns nC Unit V V/ : V S nA uA uA mŁ Test Conditions VGS=0, ID=-250uA R eference to 25 : , ID=-1mA VDS= VGS, ID=-250uA VDS=-10.0V,ID=-1.7A VGS= D 20V VDS=-30V, VGS=0 VDS=-30V, VGS=0 ID=-1.7A, VGS =-10V ID=-1.3A, VGS =-4.5V ID=-1.7A VDS=-15V VGS=-10V VDS=-15V ID=-1A VGS=-10V RG=6 Ł RD=15 Ł VGS=0V VDS=-15V f=1.0MHz Symbol BVDSS BVDSS/ Tj VGS(th) gfs IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=70 : ) Static Drain-Source On-Resistance2 Total Gate Charge2 Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance R everse Transfer Capacitance 2 Source-Drain Diode Forward On Voltage2 C ontinuous Source Current(Body Diode) Pulsed Source Current (Body Diode) 1 VSD IS ISM -1.2 -1 -10 V A A IS=-1.25A, VGS=0 Tj=25 : VD= VG=0V, VS =-1.2V N otes: 1. Pulse width limited by Max. junction temperature. 2. Pulse width 300us, duty cycle 2%. 3. Surface mounted on 1 in2 c opper pad of FR4 board;270 : /w when mounted on min. copper pad. Characteristics Curve 2/4 CORPORATION ISSUED DATE :2004/10/12 REVISED DATE :2005/03/22B 3/4 CORPORATION ISSUED DATE :2004/10/12 REVISED DATE :2005/03/22B Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 4/4